Efficient Continuous-Time Sigma-Delta Converters for High Frequency Applications

Over the years Continuous-Time (CT) Sigma-Delta (ΣΔ) modulators have received a lot of attention due to their ability to efficiently digitize a variety of signals, and suitability for many different applications. Because of their tolerance to component mismatch, the easy to drive input structure, as well as intrinsic anti-aliasing filtering and noise shaping abilities, CTΣΔ modulators have become one of the most popular data-converter type for high dynamic range and moderate/wide bandwidth. This trend is the result of faster CMOS technologies along with design innovations such as better architectures and faster amplifiers. In other words, CTΣΔ modulators are starting to offer the best of both worlds, with high resolution and high bandwidth. This dissertation focuses on the bandwidth and resolution of CTΣΔ modulators. The goal of this research is to use the noise shaping benefits of CTΣΔ modulators for different wireless applications, while achieving high resolution and/or wide bandwidth. For this purpose, this research focuses on two different application areas that demand speed and resolution. These are a low-noise high-resolution time-to-digital converter (TDC), ideal for digital phase lock loops (PLL), and a very high-speed, wide-bandwidth CTΣΔ modulator for wireless communication. The first part of this dissertation presents a new noise shaping time-to-digital converter, based on a CTΣΔ modulator. This is intended to reduce the in-band phase noise of a high frequency digital phase lock loop (PLL) without reducing its loop bandwidth. To prove the effectiveness of the proposed TDC, 30GHz and a 40GHz fractional-N digital PLL are designed as a signal sources for a 240GHz FMCW radar system. Both prototypes are fabricated in a 65nm CMOS process. The standalone TDC achieves 81dB dynamic range and 13.2 equivalent number of bits (ENOB) with 176fs integrated-rms noise from 1MHz bandwidth. The in-band phase noise of the 30GHz digital fractional-N PLL is measured as -87dBc/Hz at a 100kHz offset which is equivalent to -212.6dBc/Hz2 normalized in-band phase noise. The second part of this dissertation focuses on high-speed (GS/s) CTΣΔ modulators for wireless communication, and introduces a new time-interleaved reference data weighted averaging (TI-RDWA) architecture suitable for GS/s CTΣΔ modulators. This new architecture shapes the digital-to-analog converter (DAC) mismatch effects in a CTΣΔ modulator at GS/s operating speeds. It allows us to use smaller DAC unit sizes to reduce area and power consumption for the same bandwidth. The prototype 5GS/s CTΣΔ modulator with TI-RDWA is fabricated in 40nm CMOS and it achieves 156MHz bandwidth, 70dB dynamic range, 84dB SFDR and a Schreier FoM of 158.3dB.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/138763/1/bdayanik_1.pd

Multi-Stage Noise-Shaping Continuous-Time Sigma-Delta Modulator

The design of a single-loop continuous-time ∑∆ modulator (CT∑∆M) with high resolution, wide bandwidth, and low power consumption is very challenging. The multi-stage noise-shaping (MASH) CT∑∆M architecture is identified as an advancement to the single-loop CT∑∆M architecture in order to satisfy the ever stringent requirements of next generation wireless systems. However, it suffers from the problems of quantization noise leakage and non-ideal interstage interfacing which hinder its widespread adoption. To solve these issues, this dissertation proposes a MASH CT∑∆M with on-chip RC time constant calibration circuits, multiple feedforward interstage paths, and a fully integrated noise cancellation filter (NCF). The prototype core modulator architecture is a cascade of two single-loop second- order CT∑∆M stages, each of which consists of an integrator-based active-RC loop filter, current-steering feedback digital-to-analog converters, and a four-bit flash quantizer. On-chip RC time constant calibration circuits and high gain multi-stage operational amplifiers are realized to mitigate quantization noise leakage due to process variation. Multiple feedforward interstage paths are introduced to (i) synthesize a fourth-order noise transfer function with DC zeros, (ii) simplify the design of NCF, and (iii) reduce signal swings at the second-stage integrator outputs. Fully integrated in 40 nm CMOS, the prototype chip achieves 74.4 dB of signal-to-noise and distortion ratio (SNDR), 75.8 dB of signal-to-noise ratio, and 76.8 dB of dynamic range in 50.3 MHz of bandwidth (BW) at 1 GHz of sampling frequency with 43.0 mW of power consumption (P). It does not require external software calibration and possesses minimal out-of-band signal transfer function peaking. The figure-of-merit (FOM), defined as FOM = SNDR + 10 log10(BW/P), is 165.1 dB