3 research outputs found

    Ultra-Low-Power Embedded SRAM Design for Battery- Operated and Energy-Harvested IoT Applications

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    Internet of Things (IoT) devices such as wearable health monitors, augmented reality goggles, home automation, smart appliances, etc. are a trending topic of research. Various IoT products are thriving in the current electronics market. The IoT application needs such as portability, form factor, weight, etc. dictate the features of such devices. Small, portable, and lightweight IoT devices limit the usage of the primary energy source to a smaller rechargeable or non-rechargeable battery. As battery life and replacement time are critical issues in battery-operated or partially energy-harvested IoT devices, ultra-low-power (ULP) system on chips (SoC) are becoming a widespread solution of chip makers’ choice. Such ULP SoC requires both logic and the embedded static random access memory (SRAM) in the processor to operate at very low supply voltages. With technology scaling for bulk and FinFET devices, logic has demonstrated to operate at low minimum operating voltages (VMIN). However, due to process and temperature variation, SRAMs have higher VMIN in scaled processes that become a huge problem in designing ULP SoC cores. This chapter discusses the latest published circuits and architecture techniques to minimize the SRAM VMIN for scaled bulk and FinFET technologies and improve battery life for ULP IoT applications

    Energy Efficient Hardware Design for Securing the Internet-of-Things

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    The Internet of Things (IoT) is a rapidly growing field that holds potential to transform our everyday lives by placing tiny devices and sensors everywhere. The ubiquity and scale of IoT devices require them to be extremely energy efficient. Given the physical exposure to malicious agents, security is a critical challenge within the constrained resources. This dissertation presents energy-efficient hardware designs for IoT security. First, this dissertation presents a lightweight Advanced Encryption Standard (AES) accelerator design. By analyzing the algorithm, a novel method to manipulate two internal steps to eliminate storage registers and replace flip-flops with latches to save area is discovered. The proposed AES accelerator achieves state-of-art area and energy efficiency. Second, the inflexibility and high Non-Recurring Engineering (NRE) costs of Application-Specific-Integrated-Circuits (ASICs) motivate a more flexible solution. This dissertation presents a reconfigurable cryptographic processor, called Recryptor, which achieves performance and energy improvements for a wide range of security algorithms across public key/secret key cryptography and hash functions. The proposed design employs circuit techniques in-memory and near-memory computing and is more resilient to power analysis attack. In addition, a simulator for in-memory computation is proposed. It is of high cost to design and evaluate new-architecture like in-memory computing in Register-transfer level (RTL). A C-based simulator is designed to enable fast design space exploration and large workload simulations. Elliptic curve arithmetic and Galois counter mode are evaluated in this work. Lastly, an error resilient register circuit, called iRazor, is designed to tolerate unpredictable variations in manufacturing process operating temperature and voltage of VLSI systems. When integrated into an ARM processor, this adaptive approach outperforms competing industrial techniques such as frequency binning and canary circuits in performance and energy.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/147546/1/zhyiqun_1.pd

    Ultra-low-power SRAM design in high variability advanced CMOS

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    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.Cataloged from PDF version of thesis.Includes bibliographical references (p. 163-181).Embedded SRAMs are a critical component in modern digital systems, and their role is preferentially increasing. As a result, SRAMs strongly impact the overall power, performance, and area, and, in order to manage these severely constrained trade-offs, they must be specially designed for target applications. Highly energy-constrained systems (e.g. implantable biomedical devices, multimedia handsets, etc.) are an important class of applications driving ultra-low-power SRAMs. This thesis analyzes the energy of an SRAM sub-array. Since supply- and threshold-voltage have a strong effect, targets for these are established in order to optimize energy. Despite the heavy emphasis on leakage-energy, analysis of a high-density 256x256 sub-array in 45nm LP CMOS points to two necessary optimizations: (1) aggressive supply-voltage reduction (in addition to Vt elevation), and (2) performance enhancement. Important SRAM metrics, including read/write/hold-margin and read-current, are also investigated to identify trade-offs of these optimizations. Based on the need to lower supply-voltage, a 0.35V 256kb SRAM is demonstrated in 65nm LP CMOS. It uses an 8T bit-cell with peripheral circuit-assists to improve write-margin and bit-line leakage. Additionally, redundancy, to manage the increasing impact of variability in the periphery, is proposed to improve the area-offset trade-off of sense-amplifiers, demonstrating promise for highly advanced technology nodes. Based on the need to improve performance, which is limited by density constraints, a 64kb SRAM, using an offset-compensating sense-amplifier, is demonstrated in 45nm LP CMOS with high-density 0.25[mu]m2 bit-cells.(cont.) The sense-amplifier is regenerative, but non -strobed, overcoming timing uncertainties limiting performance, and it is single-ended, for compatibility with 8T cells. Compared to a conventional strobed sense-amplifier, it achieves 34% improvement in worst-case access-time and 4x improvement in the standard deviation of the access-time.by Naveen Verma.Ph.D
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