GCA 4800 DSN wafer stepper

The following work lays the foundation for the further development of high resolution photolithography at RIT using a GCA 4800 DSW wafer stepper. It has been determined experimentally that . the machine is presently capable of printing 1.4 micrometer lines and spaces with and exposure latitude of 10% over the entire wafer. The stage precision is within the +0.2 micron spec, and the system registration is within the + 0.35 micron specification. The stage orthogonality has been corrected so that it is within the + 0.5 arc second specification. Optical distortion is within its spec of + 0.2 microns, while lens reduction and die rotation were found to be slightly out of their specs of + 0.2 microns and +0.1 microns respectively. It is intended that this machine be used to produce devices using three micron design rules, and considering these results, that will not be a problem

NASA Tech Briefs, July 1997

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