Challenges and Solutions for High Performance Analog Circuits with Robust Operation in Low Power Digital CMOS

In modern System-on-Chip products, analog circuits need to co-exist with digital circuits integrated on the same chip. This brings on a lot of challenges since analog circuits need to maintain their performance while being subjected to disturbances from the digital circuits. Device size scaling is driven by digital applications to reduce size and improve performance but also results in the need to reduce the supply voltage. Moreover, in some applications, digital circuits require a changing supply voltage to adapt performance to workloads. So it is further desirable to develop design solutions for analog circuits that can operate with a flexible supply voltage, which can be reduced well below 1V. In this thesis challenges and solutions for key high performance analog circuit functions are explored and demonstrated that operate robustly in a digital environment, function with flexible supply voltages or have a digital-like operation. A combined phase detector consisting of a phase-frequency detector and sub-sampling phase detector is proposed for phase-locked loops (PLLs). The phase-frequency function offers robust operation and the sub-sampling detector leads to low in-band phase noise. A 2.2GHz PLL with a combined phase detector was prototyped in a 65nm CMOS process, with an on-chip loop filter area of only 0.04mm². The experimental results show that the PLL with the combined phase detector is more robust to disturbances than a sub-sampling PLL, while still achieving a measured in-band phase noise of -122dBc/Hz which is comparable to the excellent noise performance of a sub-sampling PLL. A pulse-controlled common-mode feedback (CMFB) circuit is proposed for a 0.6V-1.2V supply-scalable fully-differential amplifier that was implemented in a low power/leakage 65nm CMOS technology. An integrator built with the amplifier occupies an active area of 0.01mm². When the supply is changed from 0.6V to 1.2V, the measured frequency response changes are small, demonstrating the flexible supply operation of the differential amplifier with the pulse-controlled CMFB. Next, models are developed to study the performance scaling of a continuous-time sigma-delta modulator (SDM) with a varying supply voltage. It is demonstrated that the loop filter and the quantizer exhibit different supply dependence. The loop noise performance becomes better at a higher supply thanks to larger signal swings and better signal-to-noise ratio, while the figure of merit determined by the quantization noise gets better at a lower supply voltage, thanks to the quantizer power dissipation reduction. The theoretical models were verified with simulations of a 0.6V-1.2V 2MHz continuous-time SDM design in a 65nm CMOS low power/leakage process. Finally, two design techniques are introduced that leverage the continued improvement of digital circuit blocks for the realization of analog functions. A voltage-controlled-ring-oscillator-based amplifier with zero compensation is proposed that internally uses a phase-domain representation of the analog signal. This provides a huge DC gain without significant penalties on the unity-gain bandwidth or area. With this amplifier a 4th-order 40-MHz active-UGB-RC filter was implemented that offers a wide bandwidth, superior linearity and small area. The filter prototype in a 55nm CMOS process has an active area of 0.07mm² and a power consumption of 7.8mW at 1.2V. The in-band IIP3 and out-of-band IIP3 are measured as 27.3dBm and 22.5dBm, respectively. A digital in-situ biasing technique is proposed to overcome the design challenges of conventional analog biasing circuits in an advanced CMOS process. A digital CMFB was simulated in a 65nm CMOS technology to demonstrate the advantages of this digital biasing scheme. Using time-based successive approximation conversion, the digital CMFB provides the desired analog output with a more robust operation and a smaller area, but without needing any stability compensation schemes like in conventional analog CMFBs. In summary, analog design techniques are continuously evolving to adapt to the integration with digital circuits on the same chip and are increasingly using digital-like blocks to realize analog functions in highly-integrated SOC chips. The signal representation in analog circuits is moving from traditional electrical signals such as voltage or current, to time and phase-domain representations. These changes make analog circuits more robust to voltage disturbances and supply variations. In addition to improved robustness, analog circuits based on timing signals benefit from the faster and smaller transistors offered by the continued feature scaling in CMOS technologies

Multi-Stage Noise-Shaping Continuous-Time Sigma-Delta Modulator

The design of a single-loop continuous-time ∑∆ modulator (CT∑∆M) with high resolution, wide bandwidth, and low power consumption is very challenging. The multi-stage noise-shaping (MASH) CT∑∆M architecture is identified as an advancement to the single-loop CT∑∆M architecture in order to satisfy the ever stringent requirements of next generation wireless systems. However, it suffers from the problems of quantization noise leakage and non-ideal interstage interfacing which hinder its widespread adoption. To solve these issues, this dissertation proposes a MASH CT∑∆M with on-chip RC time constant calibration circuits, multiple feedforward interstage paths, and a fully integrated noise cancellation filter (NCF). The prototype core modulator architecture is a cascade of two single-loop second- order CT∑∆M stages, each of which consists of an integrator-based active-RC loop filter, current-steering feedback digital-to-analog converters, and a four-bit flash quantizer. On-chip RC time constant calibration circuits and high gain multi-stage operational amplifiers are realized to mitigate quantization noise leakage due to process variation. Multiple feedforward interstage paths are introduced to (i) synthesize a fourth-order noise transfer function with DC zeros, (ii) simplify the design of NCF, and (iii) reduce signal swings at the second-stage integrator outputs. Fully integrated in 40 nm CMOS, the prototype chip achieves 74.4 dB of signal-to-noise and distortion ratio (SNDR), 75.8 dB of signal-to-noise ratio, and 76.8 dB of dynamic range in 50.3 MHz of bandwidth (BW) at 1 GHz of sampling frequency with 43.0 mW of power consumption (P). It does not require external software calibration and possesses minimal out-of-band signal transfer function peaking. The figure-of-merit (FOM), defined as FOM = SNDR + 10 log10(BW/P), is 165.1 dB

Design of sigma-delta modulators for analog-to-digital conversion intensively using passive circuits

This thesis presents the analysis, design implementation and experimental evaluation of passiveactive discrete-time and continuous-time Sigma-Delta (ΣΔ) modulators (ΣΔMs) analog-todigital converters (ADCs). Two prototype circuits were manufactured. The first one, a discrete-time 2nd-order ΣΔM, was designed in a 130 nm CMOS technology. This prototype confirmed the validity of the ultra incomplete settling (UIS) concept used for implementing the passive integrators. This circuit, clocked at 100 MHz and consuming 298 μW, achieves DR/SNR/SNDR of 78.2/73.9/72.8 dB, respectively, for a signal bandwidth of 300 kHz. This results in a Walden FoMW of 139.3 fJ/conv.-step and Schreier FoMS of 168 dB. The final prototype circuit is a highly area and power efficient ΣΔM using a combination of a cascaded topology, a continuous-time RC loop filter and switched-capacitor feedback paths. The modulator requires only two low gain stages that are based on differential pairs. A systematic design methodology based on genetic algorithm, was used, which allowed decreasing the circuit’s sensitivity to the circuit components’ variations. This continuous-time, 2-1 MASH ΣΔM has been designed in a 65 nm CMOS technology and it occupies an area of just 0.027 mm2. Measurement results show that this modulator achieves a peak SNR/SNDR of 76/72.2 dB and DR of 77dB for an input signal bandwidth of 10 MHz, while dissipating 1.57 mW from a 1 V power supply voltage. The ΣΔM achieves a Walden FoMW of 23.6 fJ/level and a Schreier FoMS of 175 dB. The innovations proposed in this circuit result, both, in the reduction of the power consumption and of the chip size. To the best of the author’s knowledge the circuit achieves the lowest Walden FOMW for ΣΔMs operating at signal bandwidth from 5 MHz to 50 MHz reported to date