적응형 눈 감지 방법을 포함한 저전력 메모리 컨트롤러의 설계

학위논문 (박사)-- 서울대학교 대학원 공과대학 전기·컴퓨터공학부, 2017. 8. 김수환.and the read margin was enhanced from 0.30UI and 76mV without AF-CTLE to 0.47UI and 80mV to with AF-CTLE. The power efficiency during burst write and read were 5.68pJ/bit and 1.83pJ/bit respectively.A 4266Mb/s/pin LPDDR4 memory controller with an asynchronous feedback continuous-time linear equalizer and an adaptive 3-step eye detection algorithm is presented. The asynchronous feedback continuous-time linear equalizer removes the glitch of DQS without training by applying an offset larger than the noise, and improves read margin by operating as a decision feedback equalizer in DQ path. The adaptive 3-step eye detection algorithm reduces power consumption and black-out time in initialization sequence and retraining in comparison to the 2-dimensional full scanning. In addition, the adaptive 3-step eye detection algorithm can maintain the accuracy by sequentially searching the eye boundaries and initializing the resolution using the binary search method when the eye detection result changes. To achieve high bandwidth, a transmitter and receiver suitable for training are proposed. The transmitter consists of a phase interpolator, a digitally-controlled delay line, a 16:1 serializer, a pre-driver and low-voltage swing terminated logic. The receiver consists of a reference voltage generator, a continuous-time linear equalizer, a phase interpolator, a digitally-controlled delay line, a 1:4 deserializer, and a 4:16 deserializer. The clocking architecture is also designed for low power consumption in idle periods, which are commonly lengthy in mobile applications. A prototype chip was implemented in a 65nm CMOS process with ball grid array package and tested with commodity LPDDR4. The write margin was 0.36UI and 148mVCHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 5 CHAPTER 2 LPDDR4 6 2.1 COMPARISON BETWEEN LPDDR3 AND LPDDR4 6 2.2 SOURCE SYNCHRONOUS CLOCKING SCHEME 9 2.3 SIGNALING STANDARDS 11 2.4 MULTIPLE TRAININGS 14 2.5 RE-TRAINING AND RE-INITIALIZATION 16 CHAPTER 3 ADAPTIVE EYE DETECTION 18 3.1 EYE DETECTION 18 3.2 1X2Y3X EYE DETECTION 20 3.3 ADAPTIVE GAIN CONTROL 22 3.4 ADAPTIVE 1X2Y3X EYE DETECTION 24 CHAPTER 4 LPDDR4 MEMORY CONTROLLER 26 4.1 DESIGN PROCEDURE 26 4.2 ARCHITECTURE 30 4.2.1 TRANSMITTER 33 4.2.2 RECEIVER 35 4.2.3 CLOCKING ARCHITECTURE 38 4.3 CIRCUIT IMPLEMENTATION 43 4.3.1 ADPLL WITH MULTI-MODULUS DIVIDER 43 4.3.2 ADDLL WITH TRIANGULAR-MODULATED PI 45 4.3.3 CTLE WITH AUTO-DQS CLEANING 47 4.3.4 DES WITH CLOCK DOMAIN CROSSING 52 4.3.5 LVSTL WITH ZQ CALIBRATION 54 4.3.6 COARSE-FINE DCDL 56 4.4 LINK TRAINING 57 4.4.1 SIMULATION RESULTS 59 CHAPTER 5 MEASUREMENT RESULTS 72 5.1 MEASUREMENT SETUP 72 5.2 MEASUREMENT RESULTS OF SUB-BLOCK 80 5.2.1 ADPLL WITH MULTI-MODULUS DIVIDER 80 5.2.2 ADDLL WITH TRIANGULAR-MODULATED PI 82 5.2.3 COARSE-FINE DCDL 84 5.3 LPDDR4 INTERFACE MEASUREMENT RESULTS 84 CHAPTER 6 CONCLUSION 88 BIBLIOGRAPHY 90Docto

A LPDDR4 MEMORY CONTROLLER DESIGN WITH EYE CENTER DETECTION ALGORITHM

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2016. 2. 김수환.The demand for higher bandwidth with reduced power consumption in mobile memory is increasing. In this thesis, architecture of the LPDDR4 memory controller, operated with a LPDDR4 memory, is proposed and designed, and efficient training algorithm, which is appropriate for this architecture, is proposed for memory training and verification. The operation speed range of the LPDDR4 memory specification is from 533Mbps to 4266Mbps, and the LPDDR4 memory controller is designed to support that range of the LPDDR4 memory. The phase-locked loop in the LPDDR4 memory controller is designed to operate between 1333MHz and 2133MHz. To cover the range of the LPDDR4 memory, the selectable frequency divider is used to provide operation clock. The output frequency of the phase-locked loop with divider is from 266MHz to 2133MHz. The delay-locked loop in the LPDDR4 memory controller is designed to operate between 266MHz and 2133MHz with 180˚ phase locking. The delay-locked loop is used each training operation, which is command training, data read and write training. To complete training in each training stage, eye center detection algorithm is used. The circuits for the proposed eye center detection algorithm such as delay line, phase interpolator and reference generator are designed and validated. The proposed 1x2y3x eye center detection algorithm is 23 times faster than conventional two-dimensional eye center detection algorithm and it can be implemented simply. Using 65nm CMOS process, the proposed LPDDR4 memory controller occupies 12mm2. The verification of the LPDDR4 memory controller is performed with commodity LPDDR4 memory. The verification of all training sequence, which is power on, initializing, boot up, command training, write leveling, read training, write training, is performed in this environment. The low voltage swing terminated logic driver and other several functions, including write leveling and data transmission, are verified at 4266Mbps and the entire LPDDR4 memory controller operations from 566Mbps to 1600Mbps are verified. The proposed eye center detection algorithm is verified from 566Mbps to 2843Mbps.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 INTRODUCTION 5 1.3 THESIS ORGANIZATION 7 CHAPTER 2 LPDDR4 MEMORY CONTROLLER DESIGN 8 2.1 DIFFERENCE BETWEEN LPDDR3 AND LPDDR4 MEMORY 8 2.1.1 ARCHITECTURAL DIFFERENCE BETWEEN LPDDR3 AND LPDDR4 MEMORY 10 2.1.2 SOURCE SYNCHRONOUS MATCHED SCHEME AND UNMATCHED SCHEME 11 2.1.3 LOW VOLTAGE SWING TERMINATED LOGIC DRIVER AND TERMINATION SCHEME 12 2.2 LPDDR4 MEMORY CONTROLLER SPECIFICATION 15 2.3 DESIGN PROCEDURE 18 CHAPTER 3 LPDDR4 MEMORY CONTROLLER ARCHITECTURE BASED ON MEMORY TRAINING 20 3.1 LPDDR4 MEMORY TRAINING SEQUENCE 20 3.2 LPDDR4 MEMORY TRAINING EYE DETECTION ALGORITHM 24 3.2.1 EYE CENTER DETECTION 24 3.2.2 1X2Y3X EYE CENTER DETECTION ALGORITHM 27 3.3. LPDDR4 MEMORY CONTROLLER DESIGN BASED ON MEMORY TRAINING 31 3.3.1 ARCHITECTURE FOR MEMORY BOOT UP AND POWER UP 31 3.3.2 CLOCK PATH ARCHITECTURE AND CLOCK TREE 34 3.3.3 COMMAND TRAINING AND COMMAND PATH ARCHITECTURE 35 3.3.4 WRITE LEVELING AND DATA STROBE TRANSMISSION PATH ARCHITECTURE 39 3.3.5 READ TRAINING AND READ PATH ARCHITECTURE 41 3.3.6 WRITE TRAINING AND WRITE PATH ARCHITECTURE 43 3.3.7 NORMAL READ/WRITE OPERATION AND MARGIN TEST 46 CHAPTER 4 LPDDR4 MEMORY CONTROLLER ARCHITECTURE MODELING AND CIRCUIT DESIGN 48 4.1 OVERALL LPDDR4 MEMORY CONTROLLER ARCHITECTURE MODELING 48 4.2 SIMULATION RESULT OF LPDDR4 MEMORY CONTROLLER MODELING 51 4.3 LPDDR4 MEMORY CONTROLLER CIRCUIT DESIGN 61 4.3.1 PHASE-LOCKED LOOP 61 4.3.2 DELAY-LOCKED LOOP 65 4.3.3 TRANSMITTER OF LPDDR4 MEMORY CONTROLLER: WRITE PATH 70 4.3.4 DE-SERIALIZER WITH CLOCK DOMAIN CROSSING 75 CHAPTER 5 MEASUREMENT RESULT OF LPDDR4 MEMORY CONTROLLER 77 5.1 LPDDR4 MEMORY CONTROLLER MEASUREMENT SETUP 77 5.1.1 LPDDR4 MEMORY CONTROLLER FLOOR PLAN AND LAYOUT 77 5.1.2 PACKAGE AND TEST BOARD 79 5.2 LPDDR4 MEMORY CONTROLLER SUB-BLOCK MEASUREMENT 81 5.2.1 PHASE-LOCKED LOOP 81 5.2.2 DELAY-LOCKED LOOP 83 5.2.3 200PS AND 800PS DELAY LINE 85 5.2.4 VOLTAGE REFERENCE GENERATOR 86 5.2.5 PHASE INTERPOLATOR 87 5.3 LPDDR4 MEMORY SYSTEM OPERATION MEASUREMENT 90 CHAPTER 6 CONCLUSION 93 APPENDIX OPERATION FLOW CHART OF THE PROPOSED LPDDR4 MEMORY CONTROLLER 95 BIBLIOGRAPHY 118 KOREAN ABSTRACT 124Docto