A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-μm CMOS

A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50-[ohm] input and output matching is demonstrated in 0.18-μm CMOS. The use of substrate-shielded coplanar waveguide structures for matching networks results in low passive loss and small die size. Simple circuit techniques based on stability criteria derived result in an unconditionally stable amplifier. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5-dBm with a 3-dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8-V supply. The chip area is 1.26 mm^2

Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits

A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with more than 15-dB forward transmission gain operating in different frequency bands inside a 4-22-GHz range are implemented. The amplifiers achieve high gain-bandwidth products (79-96 GHz) despite their standard multistage designs. These amplifiers are based on an identical transistor array interconnected with application specific coplanar waveguide (CPW) transmission lines and on-chip capacitors and resistors. CPW lines are implemented using a one-metal-layer post-processing technology over a thick Parylene-N (15 mum ) dielectric layer that enables very low loss lines (~0.6 dB/mm at 20 GHz) and high-performance CMOS amplifiers. The proposed integration approach has the potential for implementing cost-efficient and high-performance RF and microwave circuits with a short turnaround time

Design and characterization of monolithic millimeter-wave active and passive components, low-noise and power amplifiers, resistive mixers, and radio front-ends

This thesis focuses on the design and characterization of monolithic active and passive components, low-noise and power amplifiers, resistive mixers, and radio front-ends for millimeter-wave applications. The thesis consists of 11 publications and an overview of the research area, which also summarizes the main results of the work. In the design of millimeter-wave active and passive components the main focus is on realized CMOS components and techniques for pushing nanoscale CMOS circuits beyond 100 GHz. Test structures for measuring and analyzing these components are shown. Topologies for a coplanar waveguide, microstrip line, and slow-wave coplanar waveguide that are suitable for implementing transmission lines in nanoscale CMOS are presented. It is demonstrated that the proposed slow-wave coplanar waveguide improves the performance of the transistor-matching networks when compared to a conventional coplanar waveguide and the floating slow-wave shield reduces losses and simplifies modeling when extended below other passives, such as DC decoupling and RF short-circuiting capacitors. Furthermore, wideband spiral transmission line baluns in CMOS at millimeter-wave frequencies are demonstrated. The design of amplifiers and a wideband resistive mixer utilizing the developed components in 65-nm CMOS are shown. A 40-GHz amplifier achieved a +6-dBm 1-dB output compression point and a saturated output power of 9.6 dBm with a miniature chip size of 0.286 mm². The measured noise figure and gain of the 60-GHz amplifier were 5.6 dB and 11.5 dB, respectively. The V-band balanced resistive mixer achieved a 13.5-dB upconversion loss and 34-dB LO-to-RF isolation with a chip area of 0.47 mm². In downconversion, the measured conversion loss and 1-dB input compression point were 12.5 dB and +5 dBm, respectively. The design and experimental results of low-noise and power amplifiers are presented. Two wideband low-noise amplifiers were implemented in a 100-nm metamorphic high electron mobility transistor (HEMT) technology. The amplifiers achieved a 22.5-dB gain and a 3.3-dB noise figure at 94 GHz and a 18-19-dB gain and a 5.5-7.0-dB noise figure from 130 to 154 GHz. A 60-GHz power amplifier implemented in a 150-nm pseudomorphic HEMT technology exhibited a +17-dBm 1-dB output compression point with a 13.4-dB linear gain. In this thesis, the main system-level aspects of millimeter-wave transmitters and receivers are discussed and the experimental circuits of a 60-GHz transmitter front-end and a 60-GHz receiver with an on-chip analog-to-digital converter implemented in 65-nm CMOS are shown. The receiver exhibited a 7-dB noise figure, while the saturated output power of the transmitter front-end was +2 dBm. Furthermore, a wideband W-band transmitter front-end with an output power of +6.6 dBm suitable for both image-rejecting superheterodyne and direct-conversion transmission is demonstrated in 65-nm CMOS

Novel CMOS RFIC Layout Generation with Concurrent Device Placement and Fixed-Length Microstrip Routing

With advancing process technologies and booming IoT markets, millimeter-wave CMOS RFICs have been widely developed in re- cent years. Since the performance of CMOS RFICs is very sensi- tive to the precision of the layout, precise placement of devices and precisely matched microstrip lengths to given values have been a labor-intensive and time-consuming task, and thus become a major bottleneck for time to market. This paper introduces a progressive integer-linear-programming-based method to gener- ate high-quality RFIC layouts satisfying very stringent routing requirements of microstrip lines, including spacing/non-crossing rules, precise length, and bend number minimization, within a given layout area. The resulting RFIC layouts excel in both per- formance and area with much fewer bends compared with the simulation-tuning based manual layout, while the layout gener- ation time is significantly reduced from weeks to half an hour.Comment: ACM/IEEE Design Automation Conference (DAC), 201

A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon

A 77-GHz, +17.5 dBm power amplifier (PA) with fully integrated 50-Ω input and output matching and fabricated in a 0.12-µm SiGe BiCMOS process is presented. The PA achieves a peak power gain of 17 dB and a maximum single-ended output power of 17.5 dBm with 12.8% of power-added efficiency (PAE). It has a 3-dB bandwidth of 15 GHz and draws 165 mA from a 1.8-V supply. Conductor-backed coplanar waveguide (CBCPW) is used as the transmission line structure resulting in large isolation between adjacent lines, enabling integration of the PA in an area of 0.6 mm^2. By using a separate image-rejection filter incorporated before the PA, the rejection at IF frequency of 25 GHz is improved by 35 dB, helping to keep the PA design wideband

30 GHz Adaptive Receiver Equalization Design Using 28 nm CMOS Technology

This thesis consists of a 28 nm submicron circuit design for high speed transceiver circuits used in high-speed wireline communications that operate in the 60 Gb/s range. This thesis is based on research done on high speed equalizer standards for the USB 3.1 SuperSpeed Differential Channel Loss Receiver Equalizer or Peripheral Component Interconnect (PCI) Express® Base Specification Revision 3.0. As of 2015, USB 3.1 and PCI Express® 3.0 are technologies with possibilities to be implemented in emerging technology targeted to consumer applications that demand improvements in signal integrity for high speed serial data communication of baud rates above 20 Gb/s. This thesis proposes a circuit design for an adaptive equalizer capable of adjusting its voltage gain, bandwidth, and boost for high speed data communications. The proposed design is implemented with a novel variable gain amplifier (VGA), a digitally controlled continuous time linear equalizer (CTLE), and a digitally controlled decision feedback equalizer (DFE), which is believed to provide circuit power and signal integrity improvements in the differential receiver and equalization subsystem that operate at 60 Gb/s

Integrated phased array systems in silicon

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-μm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-μm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications

Distributed active transformer - a new power-combining andimpedance-transformation technique

In this paper, we compare the performance of the newly introduced distributed active transformer (DAT) structure to that of conventional on-chip impedance-transformations methods. Their fundamental power-efficiency limitations in the design of high-power fully integrated amplifiers in standard silicon process technologies are analyzed. The DAT is demonstrated to be an efficient impedance-transformation and power-combining method, which combines several low-voltage push-pull amplifiers in series by magnetic coupling. To demonstrate the validity of the new concept, a 2.4-GHz 1.9-W 2-V fully integrated power-amplifier achieving a power-added efficiency of 41% with 50-Ω input and output matching has been fabricated using 0.35-μm CMOS transistor

Design and Analysis of SiGe Millimeter-Wave Radio Front-End MMICs For 5G Communication

This thesis focuses on design and realization of millimeter-wave radio frontend circuits for fifth generation(5G) wireless communication in 0.13um silicongermanium(SiGe) BiCMOS process. Radio front-end includes single-pole doublethrough (SPDT) switch, low noise amplifier (LNA) and buffer amplifier(BA) as a part of radio frequency(RF) transceiver system for E-band. The SPDT switch utilizes the reveres saturated SiGe heterojunction bipolar transistor(HBT). The resulting reverse saturated switch shows an insertion loss of 1 dB , isolation of 26 dB, reflection coefficient better than 25 dB at 75 GHz and provides a bandwidth of 40 GHz. A single to differential ended low noise amplifier(LNA)is designed using transformer balun. Simultaneous noise and impedance matching is used in order to realize both low noise and low reflection at the same time. The post layout simulation of E-band low noise amplifier exhibits a gain and noise figure(NF) of 26 dB and 5.5 dB respectively with a power consumption of 33.5 mW. The buffer amplifier shows a gain of 5.5 dB at 75 GHz. Finally, the receiver achieved a gain of 19.6 dB, noise figure(NF) of 6.9 dB and impedance matching better than 13.5 dB at 75 GHz. A 3 dB bandwidth of more than 12 GHz is achieved from the receiver. Extensive simulation results showing the performance of each circuit of receiver are presented