Multi-Phase Sub-Sampling Fractional-N PLL with soft loop switching for fast robust locking

This paper presents a low phase noise sub-sampling PLL (SSPLL) with multi-phase outputs. Automatic soft switching between the sub-sampling phase loop and frequency loop is proposed to improve robustness against perturbations and interferences that may cause a traditional SSPLL to lose lock. A quadrature LC oscillator with capacitive phase interpolation network is employed to generate multi-phase outputs, which are further utilized to achieve fractional-N frequency synthesis. Implemented in a 130nm CMOS technology, the SSPLL chip is able to achieve a measured in-band phase noise of -120 dBc/Hz and a measured integrated jitter of 209 fs at 2.4 GHz, while consuming 27.2 mW with 16 output phases. The measured reference spur and fractional spur level is -72 dBc and -49 dBc, respectively

Techniques for Frequency Synthesizer-Based Transmitters.

Internet of Things (IoT) devices are poised to be the largest market for the semiconductor industry. At the heart of a wireless IoT module is the radio and integral to any radio is the transmitter. Transmitters with low power consumption and small area are crucial to the ubiquity of IoT devices. The fairly simple modulation schemes used in IoT systems makes frequency synthesizer-based (also known as PLL-based) transmitters an ideal candidate for these devices. Because of the reduced number of analog blocks and the simple architecture, PLL-based transmitters lend themselves nicely to the highly integrated, low voltage nanometer digital CMOS processes of today. This thesis outlines techniques that not only reduce the power consumption and area, but also significantly improve the performance of PLL-based transmitters.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/113385/1/mammad_1.pd

Quadrature Frequency Synthesis for Wideband Wireless Transceivers

University of Minnesota Ph.D. dissertation. May 2014. Major: Electrical Engineering. Advisor: Ramesh Harjani. 1 computer file (PDF); xi, 112 pages.In this thesis, three different techniques pertinent to quadrature LO generation in high data rate and wideband RF transceivers are presented. Prototype designs are made to verify the performance of the proposed techniques, in three different technologies: IBM 130nm CMOS process, TSMC 65nm CMOS process and IBM 32nm SOI process. The three prototype designs also cover three different frequency bands, ranging from 5GHz to 74GHz. First, an LO generation scheme for a 21 GHz center-frequency, 4-GHz instantaneous bandwidth channelized receiver is presented. A single 1.33 GHz reference source is used to simultaneously generate 20 GHz and 22 GHz LOs with quadrature outputs. Injection locking is used instead of conventional PLL techniques allowing low-power quadrature generation. A harmonic-rich signal, containing both even and odd harmonics of the input reference signal, is generated using a digital pulse slimmer. Two ILO chains are used to lock on to the 10th and 11th harmonics of the reference signal generating the 20 GHz and the 22 GHz quadrature LOs respectively. The prototype design is implemented in IBM's 130 nm CMOS process, draws 110 mA from a 1.2 V supply and occupies an active area of 1.8 square-mm. Next, a wide-tuning range QVCO with a novel complimentary-coupling technique is presented. By using PMOS transistors for coupling two VCOs with NMOS gm-cells, it is shown that significant phase-noise improvement (7-9 dB) can be achieved over the traditional NMOS coupling. This breaks the trade-off between quadrature accuracy and phase-noise, allowing reasonable accuracy without a significant phase-noise hit. The proposed technique is frequency-insensitive, allowing robust coupling over a wide tuning range. A prototype design is done in TSMC 65nm process, with 4-bits of discrete tuning spanning the frequency range 4.6-7.8 GHz (52% FTR) while achieving a minimum FOM of 181.4dBc/Hz and a minimum FOMT of 196dBc/Hz. Finally, a wide tuning-range millimeter wave QVCO is presented that employs a modified transformer-based super-harmonic coupling technique. Using the proposed technique, together with custom-designed inductors and metal capacitors, a prototype is designed in IBM 32nm SOI technology with 6-bits of discrete tuning using switched capacitors. Full EM-extracted simulations show a tuning range of 53.84GHz to 73.59GHz, with an FOM of 173 dBc/Hz and an FOMT of 183 dBc/Hz. With 19.75GHz of tuning range around a 63.7GHz center frequency, the simulated FTR is 31%, surpassing all similar designs in the same band. A slight modification in the tank inductors would enable the QVCO to be employed in multiple mm-Wave bands (57-66 GHz communication band, 71-76 GHz E-band, and 76-77 GHz radar band)

Analysis of the high frequency substrate noise effects on LC-VCOs

La integració de transceptors per comunicacions de radiofreqüència en CMOS pot quedar seriosament limitada per la interacció entre els seus blocs, arribant a desaconsellar la utilització de un únic dau de silici. El soroll d’alta freqüència generat per certs blocs, com l’amplificador de potencia, pot viatjar pel substrat i amenaçar el correcte funcionament de l’oscil·lador local. Trobem tres raons importants que mostren aquest risc d’interacció entre blocs i que justifiquen la necessitat d’un estudi profund per minimitzar-lo. Les característiques del substrat fan que el soroll d’alta freqüència es propagui m’és fàcilment que el de baixa freqüència. Per altra banda, les estructures de protecció perden eficiència a mesura que la freqüència augmenta. Finalment, el soroll d’alta freqüència que arriba a l’oscil·lador degrada al seu correcte comportament. El propòsit d’aquesta tesis és analitzar en profunditat la interacció entre el soroll d’alta freqüència que es propaga pel substrat i l’oscil·lador amb l’objectiu de poder predir, mitjançant un model, l’efecte que aquest soroll pot tenir sobre el correcte funcionament de l’oscil·lador. Es volen proporcionar diverses guies i normes a seguir que permeti als dissenyadors augmentar la robustesa dels oscil·ladors al soroll d’alta freqüència que viatja pel substrat. La investigació de l’efecte del soroll de substrat en oscil·ladors s’ha iniciat des d’un punt de vista empíric, per una banda, analitzant la propagació de senyals a través del substrat i avaluant l’eficiència d’estructures per bloquejar aquesta propagació, i per altra, determinant l’efecte d’un to present en el substrat en un oscil·lador. Aquesta investigació ha mostrat que la injecció d’un to d’alta freqüència en el substrat es pot propagar fins arribar a l’oscil·lador i que, a causa del ’pulling’ de freqüència, pot modular en freqüència la sortida de l’oscil·lador. A partir dels resultats de l’anàlisi empíric s’ha aportat un model matemàtic que permet predir l’efecte del soroll en l’oscil·lador. Aquest model té el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem. el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem.The integration of transceivers for RF communication in CMOS can be seriously limited by the interaction between their blocks, even advising against using a single silicon die. The high frequency noise generated by some of the blocks, like the power amplifier, can travel through the substrate, reaching the local oscillator and threatening its correct performance. Three important reasons can be stated that show the risk of the single die integration. Noise propagation is easier the higher the frequency. Moreover, the protection structures lose efficiency as the noise frequency increases. Finally, the high frequency noise that reaches the local oscillator degrades its performance. The purpose of this thesis is to deeply analyze the interaction between the high frequency substrate noise and the oscillator with the objective of being able to predict, thanks to a model, the effect that this noise may have over the correct behavior of the oscillator. We want to provide some guidelines to the designers to allow them to increase the robustness of the oscillator to high frequency substrate noise. The investigation of the effect of the high frequency substrate noise on oscillators has started from an empirical point of view, on one hand, analyzing the noise propagation through the substrate and evaluating the efficiency of some structures to block this propagation, and on the other hand, determining the effect on an oscillator of a high frequency noise tone present in the substrate. This investigation has shown that the injection of a high frequency tone in the substrate can reach the oscillator and, due to a frequency pulling effect, it can modulate in frequency the output of the oscillator. Based on the results obtained during the empirical analysis, a mathematical model to predict the effect of the substrate noise on the oscillator has been provided. The main advantage of this model is the fact that it is based on physical parameters of the oscillator and of the noise, allowing to determine the measures that a designer can take to increase the robustness of the oscillator as well as the consequences (trade-offs) that these measures have over its global performance. This model has been compared against both, simulations and real measurements, showing a very high accuracy to predict the effect of the high frequency substrate noise. The usefulness of the presented model as a design tool has been demonstrated in two case studies. Firstly, the conclusions obtained from the model have been applied in the design of an ultra low power consumption 2.5 GHz oscillator robust to the high frequency substrate noise with characteristics which make it compatible with the main communication standards in this frequency band. Finally, the model has been used as an analysis tool to evaluate the cause of the differences, in terms of performance degradation due to substrate noise, measured in two 60 GHz oscillators with two different tank inductor shielding strategies, floating and grounded. The model has determined that the robustness differences are caused by the improvement in the tank quality factor and in the oscillation amplitude and no by an increased isolation between the tank and the substrate. The model has shown to be valid and very accurate even in these extreme frequency range.Postprint (published version

A Low Phase Noise Wide-Tuning Range Class-F VCO Based on a Dual-Mode Resonator in 65nm CMOS

A Voltage Controlled Oscillator (VCO) is a critical building block in the design of current frequency synthesizers for RF system applications. State-of-the-art operation defines that an oscillator should have the best spectral purity while consuming low amount of power for a wide tuning range. With this in mind, this work presents a low phase noise wide tuning range ClassF VCO using a dual-mode resonator. In comparison to other conventional wideband oscillators, the proposed capacitively/inductively-coupled resonator will integrate the benefits of Class-F voltage control oscillators and dual-mode switching networks to obtain simultaneous low phase noise and wide-tuning range. The proposed structure, prototyped in 65nm TSMC CMOS technology, shows a 2.14 – 4.22GHz continuous tuning range, phase noise figure-of-merit (FoM) of 192.7dB at 2.3GHz and better than 188dB across the entire operating frequency range. The oscillator consumes 15-16.4mW from a 0.6V supply and occupies an active area of 0.7mm^2 . In conclusion, the proposed resonator achieves 2- 3dB phase noise improvement while achieving 65% overall tuning range when compared to a typical class-F VCO architecture

350 mV, 5 GHz Class-D Enhanced Swing Differential and Quadrature VCOs in 65 nm CMOS

A new enhanced swing class-D VCO which operates from a supply voltage as low as 300 mV is presented. The architectural advantages are described along with an analysis for the oscillation frequency. Prototype differential and quadrature variants of the proposed VCO have been implemented in a 65 nm RF CMOS process with a 5 GHz VCO oscillation frequency. At a 350 mV supply, the measured phase noise performance for the quadrature VCO with a 5% tuning range is -137.1 dBc/Hz at 3 MHz offset with a power dissipation of 2.1 mW from a 0.35 V supply. The highest resulting figure-of-merit (FoM) is 198.3 dBc/Hz.©2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works

Quadrature Phase-Domain ADPLL with Integrated On-line Amplitude Locked Loop Calibration for 5G Multi-band Applications

5th generation wireless systems (5G) have expanded frequency band coverage with the low-band 5G and mid-band 5G frequencies spanning 600 MHz to 4 GHz spectrum. This dissertation focuses on a microelectronic implementation of CMOS 65 nm design of an All-Digital Phase Lock Loop (ADPLL), which is a critical component for advanced 5G wireless transceivers. The ADPLL is designed to operate in the frequency bands of 600MHz-930MHz, 2.4GHz-2.8GHz and 3.4GHz-4.2GHz. Unique ADPLL sub-components include: 1) Digital Phase Frequency Detector, 2) Digital Loop Filter, 3) Channel Bank Select Circuit, and 4) Digital Control Oscillator. Integrated with the ADPLL is a 90-degree active RC-CR phase shifter with on-line amplitude locked loop (ALL) calibration to facilitate enhanced image rejection while mitigating the effects of fabrication process variations and component mismatch. A unique high-sensitivity high-speed dynamic voltage comparator is included as a key component of the active phase shifter/ALL calibration subsystem. 65nm CMOS technology circuit designs are included for the ADPLL and active phase shifter with simulation performance assessments. Phase noise results for 1 MHz offset with carrier frequencies of 600MHz, 2.4GHz, and 3.8GHz are -130, -122, and -116 dBc/Hz, respectively. Monte Carlo simulations to account for process variations/component mismatch show that the active phase shifter with ALL calibration maintains accurate quadrature phase outputs when operating within the frequency bands 600MHz-930MHz, 2.4GHz-2.8GHz and 3.4GHz-4.2GHz

Design of Frequency divider with voltage vontrolled oscillator for 60 GHz low power phase-locked loops in 65 nm RF CMOS

Increasing memory capacity in mobile devices, is driving the need of high-data rates equipment. The 7 GHz band around 60 GHz provides the opportunity for multi-gigabit/sec wireless communication. It is a real opportunity for developing next generation of High-Definition (HD) devices. In the last two decades there was a great proliferation of Voltage Controlled Oscillator (VCO) and Frequency Divider (FD) topologies in RF ICs on silicon, but reaching high performance VCOs and FDs operating at 60 GHz is in today's technology a great challenge. A key reason is the inaccuracy of CMOS active and passive device models at mm-W. Three critical issues still constitute research objectives at 60 GHz in CMOS: generation of the Local Oscillator (LO) signal (1), division of the LO signal for the Phase-Locked Loop (PLL) closed loop (2) and distribution of the LO signal (3). In this Thesis, all those three critical issues are addressed and experimentally faced-up: a divide-by-2 FD for a PLL of a direct-conversion transceiver operating at mm-W frequencies in 65 nm RF CMOS technology has been designed. Critical issues such as Process, Voltage and Temperature (PVT) variations, Electromagnetic (EM) simulations and power consumption are addressed to select and design a FD with high frequency dividing range. A 60 GHz VCO is co-designed and integrated in the same die, in order to provide the FD with mm-W input signal. VCOs and FDs play critical roles in the PLL. Both of them constitute the PLL core components and they would need co-design, having a big impact in the overall performance especially because they work at the highest frequency in the PLL. Injection Locking FD (ILFD) has been chosen as the optimum FD topology to be inserted in the control loop of mm-W PLL for direct-conversion transceiver, due to the high speed requirements and the power consumption constraint. The drawback of such topology is the limited bandwidth, resulting in narrow Locking Range (LR) for WirelessHDTM applications considering the impact of PVT variations. A simulation methodology is presented in order to analyze the ILFD locking state, proposing a first divide-by-2 ILFD design with continuous tuning. In order to design a wide LR, low power consumption ILFD, the impacts of various alternatives of low/high Q tank and injection scheme are deeply analysed, since the ILFD locking range depends on the Q of the tank and injection efficiency. The proposed 3-bit dual-mixing 60 GHz divide-by-2 LC-ILFD is designed with an accumulation of switching varactors binary scaled to compensate PVT variations. It is integrated in the same die with a 4-bit 60 GHz LC-VCO. The overall circuit is designed to allow measurements of the singles blocks stand-alone and working together. The co-layout is carried on with the EM modelling process of passives devices, parasitics and transmission lines extracted from the layout. The inductors models provided by the foundry are qualified up to 40 GHz, therefore the EM analysis is a must for post-layout simulation. The PVT variations have been simulated before manufacturing and, based on the results achieved, a PLL scheme PVT robust, considering frequency calibration, has been patented. The test chip has been measured in the CEA-Leti (Grenoble) during a stay of one week. The operation principle and the optimization trade-offs among power consumption, and locking ranges of the final selected ILFD topology have been demonstrated. Even if the experimental results are not completely in agreement with the simulations, due to modelling error and inaccuracy, the proposed technique has been validated with post-measurement simulations. As demonstrated, the locking range of a low-power, discrete tuned divide-by-2 ILFD can be enhanced by increasing the injection efficiency, without the drawbacks of higher power consumption and chip area. A 4-bits wide tuning range LC-VCO for mm-W applications has been co-designed using the selected 65 nm CMOS process.Postprint (published version