Design of a Limiting Amplifier for an Optical Receiver

The HEP experiments that take place at CERN’s LHC demand a multi-gigabit optical link for an efficient transmission of the resulting generated data. An optoelectronic link arises as the best solution given its possibility of working at high data rates and due to fiber’s imunnity to electromagnetic noise. The design of this optical link is particularly demanding due to the stringent data rate specifications (5Gb/s), the BER specification (1012) and the constraints imposed by radiation. In HEP, radiation is always a constraint so, the Optical Receiver circuit must be hardened in order to tolerate that kind of environment - radiation-tolerant. The core of a standard optoeletronic receiver includes a Photodiode, a Transimpedance Amplifier (TIA) and a Limiting Amplifier (LA). This thesis proposes the study and implementation of one of these blocks (LA), as the main focus, as well as the analysis and design of all three other blocks. The two major design constraints regarding the LA are the bandwidth and minimising its power consumption, which were overcome by using two bandwidth enhancement techniques. The circuit yields a bandwidth of 4:8GHz with a power consumption under 19mW. Another fundamental block is the Output Buffer. The major request for this block was maintaining relatively low transition times and improving the signal’s integrity. It has a differential output swing around 400mV with Pre-emphasis levels larger than 130%. The third block is the Received Signal Strength Indicator (RSSI). From a system point of view it is useful to have a measure of the input signal’s power so that the communication channel is used in its full potential. With a power consumption smaller than 600μW the RSSI presents an input dynamic range larger than 50 dB. The fourth block implements a Squelch function, in order to suppress unwanted output toggling due to noise. All these elements were developed in a TSMC 65nm CMOS process with a 1:2V supply voltage

Characterisation of CMOS APS Technologies for Space Applications

In recent years, the performance of scientific CMOS active pixel sensors has been improved to the point that it is now approaching that of the current silicon sensor of choice, CCDs. For some applications, CMOS APSs is believed to present significant advantages over CCDs, such as improved radiation hardness. In this work, the effect of radiation damage on a ‘baseline’ commercial APS, e2v technologies’ Jade APS, is characterised in response to gamma, proton and heavy ion irradiation. Specific performance problems encountered during this radiation characterisation, such as dark current non-uniformity under gamma irradiation, random telegraph signals under proton irradiation, and single event effects under heavy ion irradiation are described and analyzed. The X-ray spectroscopic imaging performance of the device is measured and compared to the Ocean Colour Imager APS test array showing progress towards a high frame rate spectroscopic X-ray imager for space science. The implications of these results for using similar devices in space applications are considered. Furthermore, possible novel techniques for measuring inter-pixel responsivity non-uniformity, heavy ion detection and spectroscopy, and measuring the dynamics of radiation-induced trap formation are discussed

Next-generation organic blend semiconductors for high performance solution-processable field Effect Transistors

Ambitions for transparent, lightweight, flexible and inexpensive electronic technologies that can be printed over large area substrates have driven substantial advances in the field of organic/printed electronics in recent years. Amongst the various technologies investigated, solution-processed, organic thin-film transistors (OTFTs) have received extraordinary attention, primarily due to the enormous potential for simple, cost-effective manufacturing. Two exciting research areas relevant to OTFT development that offer tremendous potential are those of the small molecule/polymer organic semiconducting blends and the science and engineering of molecular doping. However, the lack of organic semiconducting blends that surpass the benchmark charge carrier mobility of 10 cm2/Vs, and the numerous challenges associated with the practical utilisation of molecular doping, have prevented adaptation of OTFTs as a viable technology for application in the emerging sector of plastic electronics. The work in this thesis focuses on an organic semiconducting system for OTFTs that addresses these two points. The first part of this thesis describes the development of advanced organic semiconducting blends, the so-called 3rd generation (3G) blend systems. Specifically, a new blend based on the small-molecule C8-BTBT and the conjugated polymer C16DT-BT is introduced. A third component, the molecular p-dopant, C60F48, is then added to the blend system and it is found to have remarkably positive effects on OTFT performance. The ternary blend system is then combined with a solvent-mixing approach, resulting in devices with an exceptional hole mobility value exceeding 13 cm2/Vs. Through the use of complementary characterisation techniques, it is shown that key to this achievement is the unusual three-component material distribution, hinting at the existence of an unconventional doping mechanism. Furthermore, by considering alternative processing techniques, the maximum mobility of the resulting OTFTs is improved further to a value in excess of 23 cm2/Vs. The second part of the thesis focuses on the impact of p-doping in the ternary C8 BTBT:C16IDT BT:C60F48 blend on other important operating characteristics of the OTFTs. The intentional and simple to implement doping process is shown to improve key device parameters such as bias-stress stability, parasitic contact resistance, threshold voltage and the overall device-to-device parameter variation (i.e. narrowing of the parameter spread). Importantly, the inclusion of the dopant is not found to adversely affect the nature of the C8 BTBT crystal packing at the OTFT channel. The final part of this thesis describes the incorporation of 3G blend-based OTFTs into fully functional logic electronic circuits. Hybrid inverter circuits (i.e. NOT gates) are fabricated at low temperatures from solution-phase by combining the high hole mobility C8-BTBT:C16IDT-BT:C60F48 blend OTFTs as the p-channel device and a novel In2O3/ZnO heterojunction metal oxide semiconducting system as the n-channel transistor. The resulting complementary inverters exhibit excellent signal gain and high noise margins, making this hybrid circuitry a promising contender for application in the emerging field of printed microelectronics.Open Acces

Intelligent Circuits and Systems

ICICS-2020 is the third conference initiated by the School of Electronics and Electrical Engineering at Lovely Professional University that explored recent innovations of researchers working for the development of smart and green technologies in the fields of Energy, Electronics, Communications, Computers, and Control. ICICS provides innovators to identify new opportunities for the social and economic benefits of society.　 This conference bridges the gap between academics and R&D institutions, social visionaries, and experts from all strata of society to present their ongoing research activities and foster research relations between them. It provides opportunities for the exchange of new ideas, applications, and experiences in the field of smart technologies and finding global partners for future collaboration. The ICICS-2020 was conducted in two broad categories, Intelligent Circuits & Intelligent Systems and Emerging Technologies in Electrical Engineering