Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies

The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. Achieving this entails intricate strategies such as advanced digital modulations, broader channel bandwidths, complex spectrum sharing, and carrier aggregation scenarios. A particularly challenging aspect arises in the form of non-contiguous aggregation of up to six carrier components across the frequency range 1 (FR1). This necessitates receiver front-ends to effectively reject out-of-band (OOB) interferences while maintaining high-performance in-band (IB) operation. Reconfigurability becomes pivotal in such dynamic environments, where frequency resource allocation, signal strength, and interference levels continuously change. Software-defined radios (SDRs) and cognitive radios (CRs) emerge as solutions, with direct RF-sampling receivers offering a suitable architecture in which the frequency translation is entirely performed in digital domain to avoid analog mixing issues. Moreover, direct RF- sampling receivers facilitate spectrum observation, which is crucial to identify free zones, and detect interferences. Acoustic and distributed filters offer impressive dynamic range and sharp roll off characteristics, but their bulkiness and lack of electronic adjustment capabilities limit their practicality. Active filters, on the other hand, present opportunities for integration in advanced CMOS technology, addressing size constraints and providing versatile programmability. However, concerns about power consumption, noise generation, and linearity in active filters require careful consideration.This thesis primarily focuses on the design and implementation of a low-voltage, low-power RFFE tailored for direct sampling receivers in 5G FR1 applications. The RFFE consists of a balun low-noise amplifier (LNA), a Q-enhanced filter, and a programmable gain amplifier (PGA). The balun-LNA employs noise cancellation, current reuse, and gm boosting for wideband gain and input impedance matching. Leveraging FD-SOI technology allows for programmable gain and linearity via body biasing. The LNA's operational state ranges between high-performance and high-tolerance modes, which are apt for sensitivityand blocking tests, respectively. The Q-enhanced filter adopts noise-cancelling, current-reuse, and programmable Gm-cells to realize a fourth-order response using two resonators. The fourth-order filter response is achieved by subtracting the individual response of these resonators. Compared to cascaded and magnetically coupled fourth-order filters, this technique maintains the large dynamic range of second-order resonators. Fabricated in 22-nm FD-SOI technology, the RFFE achieves 1%-40% fractional bandwidth (FBW) adjustability from 1.7 GHz to 6.4 GHz, 4.6 dB noise figure (NF) and an OOB third-order intermodulation intercept point (IIP3) of 22 dBm. Furthermore, concerning the implementation uncertainties and potential variations of temperature and supply voltage, design margins have been considered and a hybrid calibration scheme is introduced. A combination of on-chip and off-chip calibration based on noise response is employed to effectively adjust the quality factors, Gm-cells, and resonance frequencies, ensuring desired bandpass response. To optimize and accelerate the calibration process, a reinforcement learning (RL) agent is used.Anticipating future trends, the concept of the Q-enhanced filter extends to a multiple-mode filter for 6G upper mid-band applications. Covering the frequency range from 8 to 20 GHz, this RFFE can be configured as a fourth-order dual-band filter, two bandpass filters (BPFs) with an OOB notch, or a BPF with an IB notch. In cognitive radios, the filter’s transmission zeros can be positioned with respect to the carrier frequencies of interfering signals to yield over 50 dB blocker rejection

Integrated Circuit and System Design for Cognitive Radio and Ultra-Low Power Applications

The ubiquitous presence of wireless and battery-powered devices is an inseparable and invincible feature of our modern life. Meanwhile, the spectrum aggregation, and limited battery capacity of handheld devices challenge the exploding demand and growth of such radio systems. In this work, we try to present two separate solutions for each case; an ultra-wideband (UWB) receiver for Cognitive Radio (CR) applications to deal with spectrum aggregation, and an ultra-low power (ULP) receiver to enhance battery life of handheld wireless devices. Limited linearity and LO harmonics mixing are two major issues that ultra-wideband receivers, and CR in particular, are dealing with. Direct conversion schemes, based on current-driven passive mixers, have shown to improve the linearity, but unable to resolve LO harmonic mixing problem. They are usually limited to 3rd, and 5th harmonics rejection or require very complex and power hungry circuitry for higher number of harmonics. This work presents a heterodyne up-down conversion scheme in 180 nm CMOS technology for CR applications (54-862 MHz band) that mitigates the harmonic mixing issue for all the harmonics, while by employing an active feedback loop, a comparable to the state-of-the art IIP3 of better than +10 dBm is achieved. Measurements show an average NF of 7.5 dB when the active feedback loop is off (i.e. in the absence of destructive interference), and 15.5 dB when the feedback loop is active and a 0 dBm interferer is applied, respectively. Also, the second part of this work presents an ultra-low power super-regenerative receiver (SRR) suitable for OOK modulation and provides analytical insight into its design procedure. The receiver is fabricated in 40 nm CMOS technology and operates in the ISM band of 902-928 MHz. Binary search algorithm through Successive Approximation Register (SAR) architecture is being exploited to calibrate the internally generated quench signal and the working frequency of the receiver. Employing an on-chip inductor and a single-ended to differential architecture for the input amplifier has made the receiver fully integrable, eliminating the need for external components. A power consumption of 320 µW from a 0.65 V supply results in an excellent energy efficiency of 80 pJ/b at 4 Mb/s data rate. The receiver also employs an ADC that enables soft-decisioning and a convenient sensitivity-data rate trade-off, achieving sensitivity of -86.5, and -101.5 dBm at 1000 and 31.25 kbps data rate, respectivel

Integrated Circuit and System Design for Cognitive Radio and Ultra-Low Power Applications

The ubiquitous presence of wireless and battery-powered devices is an inseparable and invincible feature of our modern life. Meanwhile, the spectrum aggregation, and limited battery capacity of handheld devices challenge the exploding demand and growth of such radio systems. In this work, we try to present two separate solutions for each case; an ultra-wideband (UWB) receiver for Cognitive Radio (CR) applications to deal with spectrum aggregation, and an ultra-low power (ULP) receiver to enhance battery life of handheld wireless devices. Limited linearity and LO harmonics mixing are two major issues that ultra-wideband receivers, and CR in particular, are dealing with. Direct conversion schemes, based on current-driven passive mixers, have shown to improve the linearity, but unable to resolve LO harmonic mixing problem. They are usually limited to 3rd, and 5th harmonics rejection or require very complex and power hungry circuitry for higher number of harmonics. This work presents a heterodyne up-down conversion scheme in 180 nm CMOS technology for CR applications (54-862 MHz band) that mitigates the harmonic mixing issue for all the harmonics, while by employing an active feedback loop, a comparable to the state-of-the art IIP3 of better than +10 dBm is achieved. Measurements show an average NF of 7.5 dB when the active feedback loop is off (i.e. in the absence of destructive interference), and 15.5 dB when the feedback loop is active and a 0 dBm interferer is applied, respectively. Also, the second part of this work presents an ultra-low power super-regenerative receiver (SRR) suitable for OOK modulation and provides analytical insight into its design procedure. The receiver is fabricated in 40 nm CMOS technology and operates in the ISM band of 902-928 MHz. Binary search algorithm through Successive Approximation Register (SAR) architecture is being exploited to calibrate the internally generated quench signal and the working frequency of the receiver. Employing an on-chip inductor and a single-ended to differential architecture for the input amplifier has made the receiver fully integrable, eliminating the need for external components. A power consumption of 320 µW from a 0.65 V supply results in an excellent energy efficiency of 80 pJ/b at 4 Mb/s data rate. The receiver also employs an ADC that enables soft-decisioning and a convenient sensitivity-data rate trade-off, achieving sensitivity of -86.5, and -101.5 dBm at 1000 and 31.25 kbps data rate, respectivel

Direct sampling receivers for broadband communications

Today everything tends to be connected in the Internet of Things (IoT) universe, where a broad variety of communication standards and technologies are used for those connected devices. It is always a dream to design a Software-Defined Radio (SDR) supporting different standards solely based on the software configuration. As integrated-circuit (IC) manufacture and design advance, a partial of SDR can be realized. This thesis investigates one of the most important parts in a SDR: the analog design of a direct sampling (DS) receiver, which mainly consists of a broadband RF front end and a wideband ADC. Especially, a DS receiver shows a great flexibility and efficiency for the simultaneous reception of multiple channels comparing with the traditional parallelism of superheterodyne structure. The research contributions of this work include (1) demonstration and comparative analysis of two new architectures of broadband RFPGAs: voltage-mode: RFPGA-V and current-mode: RFPGA-I. RFPGA-V and RFPGA-I utilize an innovative interpolation method and current steering approach, respectively, to achieve a fine gain step of 0.25-dB over 40-dB gain range for several GHz frequency range. Besides, with innovative design, no off-chip inductor is needed for the both RFPGAs. (2) The design of a 5-GS/s 10b time-interleaved SAR. The ADC power efficiency is significantly improved by many design techniques: the low-energy CDAC switching scheme, optimized input common-mode voltage for comparator, optimal reduced radix-2 capacitor ratio for low-power reference buffers and higher conversion speed, etc. The lane-to-lane mismatches in a time-interleave ADC are minimized by using optimal floor plan and then are calibrated digitally. Three prototypes: the broadband RF front ends with RFPGA-V, the broadband RF front ends with RFPGA-I and a 5-GHz ADC, are fabricated to verify the proposed ideas in 28nm CMOS technology.Electrical and Computer Engineerin

Circuits and architectures for broadband spectrum channelizers with sub-band gain control

Broadband receiver architectures for full-band or concurrent multi-band reception of signals are required in several applications. One approach to implementing such receivers is a spectrum channelizer that employs a frequency-folded analog-to-digital converter (FF-ADC). The design downconverts and channelizes a broadband input signal into multiple sub-bands at baseband by employing the harmonics of non-overlapping rectangular clocks. The downconverted and aliased baseband signal in each path is digitized by a baseband ADC, referred to as a sub-ADC below, that operates with a sampling rate that is lower than the Nyquist sampling rate set by the full bandwidth of the input signal. Sub-band separation is performed through digital harmonic rejection (HR) and image rejection (IR). The design operates similar to a time-interleaved ADC, except that it significantly reduces the bandwidth requirement of the samplers. If rectangular pulse waveforms are used in the FF-ADC down-converter, all sub-bands experience nearly equal gain during frequency down-conversion. Since all sub-bands are aliased to baseband before they are separated in the digital domain, a sub-band with large relative power can reduce the sub-ADC dynamic range that is available for other sub-bands, in addition to appearing as a blocker for other sub-bands. The research presented in this dissertation addresses approaches to overcome this issue, by embedding sub-band gain control within an FF-ADC. Chapter 2 proposes an approach that employs pulse-width-modulated local oscillator (PWM-LO) waveforms in the polyphase paths of an FF-ADC for scaling individual sub-band signal levels at baseband before digitization. The PWM-LO waveforms, which directly drive switches in each path, can be used to vary the gain in each sub-band by varying the level of harmonics in the waveforms. This is achieved by controlling the pulse-widths of the PWM-LO waveforms. This design avoids the requirement for N ×N switch matrices and variable transconductance cells in prior demonstrated approaches. The proposed architecture makes it possible to vary the spectral response of the FF-ADC with low signal-path complexity. Prediction of pulse widths for the desired harmonic, and hence the gain profile across all sub-bands, is performed using an off-chip supervised learning approach employing a neural network. Chapter 3 presents the implementation of a spectrum channelizer employing the PWM-LO-based sub-band amplitude control. The design allows for scaling the relative gain of the sub-bands over a 20-dB range. This relaxes the compression performance of the channelizer baseband and the sub-ADC dynamic range in the presence of sub-bands with significantly higher signal levels. Gain control on individual sub-bands is performed by employing customized PWM-LO waveforms,where the PWM-LO pulses are generated using delay-locked loops (DLLs). The off-chip neural-network based learning technique for estimating the PWM symbol pulse widths required for setting the desired LO harmonic levels is described. A 1.6 GS/s spectrum channelizer IC is implemented in a 65-nm CMOS process to verify the architecture. The measured channelizer gain is 51.6-56.5 dB without gain scaling and provides a range of 37-59 dB with PWM-LO gain control. Gain-scaling at a specific harmonic improves blocker compression in an unattenuated sub-band from -34 dBm to -16 dBm. The in-band gain compression with gain-scaling also increases from -32 dBm to -17 dBm. Chapter 4 describes a spectrum channelizer that uses voltage-mode downconversion. The approach requires a single voltage-mode input amplifier to drive the downconversion switches. Frequency-folding and sub-band gain control are achieved in a single signal path. This contrasts with the current-mode approach that requires a main FF-ADC path and a separate auxiliary path for sub-band gain control. By avoiding the requirement for an auxiliary input path, the approach presented here significantly simplifies the signal chain with identical gain-scaling capability. The contributions of this research and scope for future related work are summarized in Chapter 5.Electrical and Computer Engineerin

CMOS and SOI CMOS FET-based gas sensors

In recent years, there has been considerable interest in the use of gas/vapour monitors and electronic nose instruments by the environmental, automotive and medical industries. These applications require low cost and low power sensors with high yield and high reproducibility, with an annual prospective market of 1 million pounds. Present device and sensor technologies suffer a major limitation, their incompatibility with a standard silicon CMOS process. These technologies have either operating/annealing temperatures unsuited for MOSFET operation or an inappropriate sensing mechanism. The aim of this research is the development of CMOS compatible gas/vapour sensors, with a low cost of fabrication, high device repeatability and, in the future, transducer sensor amalgamation. Two novel approaches have been applied, utilising bulk CMOS and SOI BiCMOS. The bulk CMOS designs use a MOSFET sensing structure, with an active polymeric gate material, operating at low temperatures (<100°C), based on an array device of four elements, with channel lengths of 10 μm or 5 μm. The SOI designs exploit a MOSFET heater with a chemoresistive or chemFET sensing structure, on a thin membrane formed by the epi-taxial layer. By applying SOI technology, the first use in gas sensor applications, operating temperatures of up to 300 °C can be achieved at a power cost of only 35 mW (simulated). Full characterisation of the bulk CMOS chemFET sensors has been performed using electrochemically deposited (e.g. poly(pyrrole)/BSA)) and composite polymers (e.g. poly(9-vinylcarbazole)) to ethanol and toluene vapour in air. In addition, environmental factors (humidity and temperature) on the response and baseline were investigated. This was carried out using a newly developed flow injection analysis test station, which conditions the test vapour to precise analyte (<15 PPM of toluene) and water concentrations at a fixed temperature (RT to 105°C +- 0.1), with the sensor characterised by either I-V or constant current instrumentation. N-channel chemFET sensors operated at constant current (10 μA) with electrochemically deposited and composite polymers showed sensitivities of up to 1.1 μV/PPM and 4.0 μV/PPM to toluene vapour and to 1.1 μV/PPM and 0.4 μV/PPM for ethanol vapour, respectively, with detection limits of <20 PPM and <100 PPM to toluene and <20 PPM and 10+ PPM to ethanol vapour (limited by baseline noise), respectively. These responses followed either a power law (composite polymers) or a modified Langmuir isotherm model (electrochemically deposited polymers) with analyte concentration. It is proposed that this reaction-rate limited response is due to an alteration in polymers work function by either a partial charge transfer from the analyte or a swelling effect (polymer expansion). Increasing humidity caused, in nearly all cases a reduction in relative baseline, possible by dipole formation at the gate oxide surface. For the response, increasing humidity had no effect on sensors with composite polymers and an increase for sensors with electrochemically-deposited polymers. Higher temperatures caused a reduction in baseline signal, by a thermal expansion of the polymer, and a reduction in response explained by the analyte boiling point model describing a reduction in the bulk solubility of the polymer. Electrical and thermal characterisation of the SOI heaters, fabricated by the MATRA process, has been performed. I-V measurements show a reduction in drain current for a MOSFET after back-etching, by a degradation of the carrier mobility. Dynamic measurement showed a two stage thermal response (dual exponential), as the membrane reaching equilibrium (100-200 ms) followed by the bulk (1-2 s). A temperature coefficient of 8 mW/°C was measured, this was significantly higher than expected from simulations, explained by the membrane being only partially formed. Diode and resistive temperature sensors showed detection limits under 0.1°C and shown to measure a modulated heater output of less than 1°C at frequencies higher than 10Hz. The principal research objectives have been achieved, although further work on the SOI device is required. The results and theories presented in this study should provide a useful contribution to this research area

MEMS Accelerometers

Micro-electro-mechanical system (MEMS) devices are widely used for inertia, pressure, and ultrasound sensing applications. Research on integrated MEMS technology has undergone extensive development driven by the requirements of a compact footprint, low cost, and increased functionality. Accelerometers are among the most widely used sensors implemented in MEMS technology. MEMS accelerometers are showing a growing presence in almost all industries ranging from automotive to medical. A traditional MEMS accelerometer employs a proof mass suspended to springs, which displaces in response to an external acceleration. A single proof mass can be used for one- or multi-axis sensing. A variety of transduction mechanisms have been used to detect the displacement. They include capacitive, piezoelectric, thermal, tunneling, and optical mechanisms. Capacitive accelerometers are widely used due to their DC measurement interface, thermal stability, reliability, and low cost. However, they are sensitive to electromagnetic field interferences and have poor performance for high-end applications (e.g., precise attitude control for the satellite). Over the past three decades, steady progress has been made in the area of optical accelerometers for high-performance and high-sensitivity applications but several challenges are still to be tackled by researchers and engineers to fully realize opto-mechanical accelerometers, such as chip-scale integration, scaling, low bandwidth, etc

Radar Technology

In this book “Radar Technology”, the chapters are divided into four main topic areas: Topic area 1: “Radar Systems” consists of chapters which treat whole radar systems, environment and target functional chain. Topic area 2: “Radar Applications” shows various applications of radar systems, including meteorological radars, ground penetrating radars and glaciology. Topic area 3: “Radar Functional Chain and Signal Processing” describes several aspects of the radar signal processing. From parameter extraction, target detection over tracking and classification technologies. Topic area 4: “Radar Subsystems and Components” consists of design technology of radar subsystem components like antenna design or waveform design