Design and Analysis of an Adjacent Multi-bit Error Correcting Code for Nanoscale SRAMs

Increasing static random access memory (SRAM) bitcell density is a major driving force for semiconductor technology scaling. The industry standard 2x reduction in SRAM bitcell area per technology node has lead to a proliferation in memory intensive applications as greater memory system capacity can be realized per unit area. Coupled with this increasing capacity is an increasing SRAM system-level soft error rate (SER). Soft errors, caused by galactic radiation and radioactive chip packaging material corrupt a bitcell’s data-state and are a potential cause of catastrophic system failures. Further, reductions in device geometries, design rules, and sensitive node capacitances increase the probability of multiple adjacent bitcells being upset per particle strike to over 30% of the total SER below the 45 nm process node. Traditionally, these upsets have been addressed using a simple error correction code (ECC) combined with word interleaving. With continued scaling however, errors beyond this setup begin to emerge. Although more powerful ECCs exist, they come at an increased overhead in terms of area and latency. Additionally, interleaving adds complexity to the system and may not always be feasible for the given architecture. In this thesis, a new class of ECC targeted toward adjacent multi-bit upsets (MBU) is proposed and analyzed. These codes present a tradeoff between the currently popular single error correcting-double error detecting (SEC-DED) ECCs used in SRAMs (that are unable to correct MBUs), and the more robust multi-bit ECC schemes used for MBU reliability. The proposed codes are evaluated and compared against other ECCs using a custom test suite and multi-bit error channel model developed in Matlab as well as Verilog hardware description language (HDL) implementations synthesized using Synopsys Design Compiler and a commercial 65 nm bulk CMOS standard cell library. Simulation results show that for the same check-bit overhead as a conventional 64 data-bit SEC-DED code, the proposed scheme provides a corrected-SER approximately equal to the Bose-Chaudhuri- Hocquenghem (BCH) double error correcting (DEC) code, and a 4.38x improvement over the SEC-DED code in the same error channel. While, for 3 additional check-bits (still 3 less than the BCH DEC code), a triple adjacent error correcting version of the proposed code provides a 2.35x improvement in corrected-SER over the BCH DEC code for 90.9% less ECC circuit area and 17.4% less error correction delay. For further verification, a 0.4-1.0 V 75 kb single-cycle SRAM macro protected with a programmable, up-to-3-adjacent-bit-correcting version of the proposed ECC has been fab- ricated in a commercial 28 nm bulk CMOS process. The SRAM macro has undergone neu- tron irradiation testing at the TRIUMF Neutron Irradiation Facility in Vancouver, Canada. Measurements results show a 189x improvement in SER over an unprotected memory with no ECC enabled and a 5x improvement over a traditional single-error-correction (SEC) code at 0.5 V using 1-way interleaving for the same number of check-bits. This is compa- rable with the 4.38x improvement observed in simulation. Measurement results confirm an average active energy of 0.015 fJ/bit at 0.4 V, and average 80 mV reduction in VDDMIN across eight packaged chips by enabling the ECC. Both the SRAM macro and ECC circuit were designed for dynamic voltage and frequency scaling for both nominal and low voltage applications using a full-custom circuit design flow

Low-Power Soft-Error-Robust Embedded SRAM

Soft errors are radiation-induced ionization events (induced by energetic particles like alpha particles, cosmic neutron, etc.) that cause transient errors in integrated circuits. The circuit can always recover from such errors as the underlying semiconductor material is not damaged and hence, they are called soft errors. In nanometer technologies, the reduced node capacitance and supply voltage coupled with high packing density and lack of masking mechanisms are primarily responsible for the increased susceptibility of SRAMs towards soft errors. Coupled with these are the process variations (effective length, width, and threshold voltage), which are prominent in scaled-down technologies. Typically, SRAM constitutes up to 90% of the die in microprocessors and SoCs (System-on-Chip). Hence, the soft errors in SRAMs pose a potential threat to the reliable operation of the system. In this work, a soft-error-robust eight-transistor SRAM cell (8T) is proposed to establish a balance between low power consumption and soft error robustness. Using metrics like access time, leakage power, and sensitivity to single event transients (SET), the proposed approach is evaluated. For the purpose of analysis and comparisons the results of 8T cell are compared with a standard 6T SRAM cell and the state-of-the-art soft-error-robust SRAM cells. Based on simulation results in a 65-nm commercial CMOS process, the 8T cell demonstrates higher immunity to SETs along with smaller area and comparable leakage power. A 32-kb array of 8T cells was fabricated in silicon. After functional verification of the test chip, a radiation test was conducted to evaluate the soft error robustness. As SRAM cells are scaled aggressively to increase the overall packing density, the smaller transistors exhibit higher degrees of process variation and mismatch, leading to larger offset voltages. For SRAM sense amplifiers, higher offset voltages lead to an increased likelihood of an incorrect decision. To address this issue, a sense amplifier capable of cancelling the input offset voltage is presented. The simulated and measured results in 180-nm technology show that the sense amplifier is capable of detecting a 4 mV differential input signal under dc and transient conditions. The proposed sense amplifier, when compared with a conventional sense amplifier, has a similar die area and a greatly reduced offset voltage. Additionally, a dual-input sense amplifier architecture is proposed with corroborating silicon results to show that it requires smaller differential input to evaluate correctly.1 yea

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems