Time Stamp – A Novel Time-to-Digital Demodulation Method for Bioimpedance Implant Applications

Bioimpedance analysis is a noninvasive and inexpensive technology used to investigate the electrical properties of biological tissues. The analysis requires demodulation to extract the real and imaginary parts of the impedance. Conventional systems use complex architectures such as I-Q demodulation. In this paper, a very simple alternative time-to-digital demodulation method or ‘time stamp’ is proposed. It employs only three comparators to identify or stamp in the time domain, the crossing points of the excitation signal, and the measured signal. In a CMOS proof of concept design, the accuracy of impedance magnitude and phase is 97.06% and 98.81% respectively over a bandwidth of 10 kHz to 500 kHz. The effect of fractional-N synthesis is analysed for the counter-based zero crossing phase detector obtaining a finer phase resolution (0.51˚ at 500 kHz) using a counter clock frequency ( fclk = 12.5 MHz). Because of its circuit simplicity and ease of transmitting the time stamps, the method is very suited to implantable devices requiring low area and power consumption

SILICON TERAHERTZ ELECTRONICS: CIRCUITS AND SYSTEMS FOR FUTURE APPLICATIONS

The terahertz frequency bands are gaining increasing attention these days for the potential applications in imaging, sensing, spectroscopy, and communication. These applications can be used in a wide range of fields, such as military, security, biomedical analysis, material science, astronomy, etc. Unfortunately, utilizing these frequency bands is very challenging due to the notorious ”terahertz gap”. Consequently, current terahertz systems are very bulky and expensive, sometimes even require cryogenic conditions. Silicon terahertz electronics now becomes very attractive, since it can achieve significantly lower cost and make portable consumer terahertz devices feasible. However, due to the limited device fmax and low breakdown voltage, signal generation and processing on silicon platform in this frequency range is challenging. This thesis aims to tackle these challenges and implement high-performance terahertz systems. First of all, the devices are investigated under the terahertz frequency range and optimum termination conditions for maximizing the efficacy of the devices is derived. Then, novel passive surrounding networks are designed to provide the devices with the optimal termination conditions to push the performances of the terahertz circuit blocks. Finally, the high-performance circuit blocks are used to build terahertz systems, and system-level innovations are also proposed to push the state of the art forward. In Chapter 2, using a device-centric bottom-up design method, a 210-GHz harmonic oscillator is designed. With the parasitic tuning mechanism, a wide frequency tuning range is achieved without using lossy varactors. A passive network based on the return-path gap coupler and self-feeding structure is also designed to provide optimal terminations for the active devices to maximize the harmonic power generation. Fabricated with a 0.13-um SiGe BiCMOS process, the oscillator is highly compact with a core size of only 290x95 um2. The output frequency can be tuned from 197.5 GHz to 219.7 GHz, which is around 10.6% compared to the center frequency. It also achieves a peak output power and dc-to-RF efficiency of 1.4 dBm and 2.4%, respectively. The measured output phase noise at 1 MHz offset is -87.5 dBc/Hz. The high power, wide tuning range, low phase noise, as well as compact size, make this oscillator very suitable for terahertz systems integration. In Chapter 3, the design of a 320-GHz fully-integrated terahertz imaging system is described. The system is composed of a phase-locked high-power transmitter and a coherent high-sensitivity subharmonic-mixing receiver, which are fabricated using a 0.13-um SiGe BiCMOS technology. To enhance the imaging sensitivity, a heterodyne coherent detection scheme is utilized. To obtain frequency coherency, fully-integrated phase-locked loops are implemented on both the transmitter and receiver chips. According to the measurement, consuming a total dc power of 605 mW, the transmitter chip achieves a peak radiated power of 2 mW and a peak EIRP of 21.1 dBm. The receiver chip achieves an equivalent incoherent responsivity of more than 7.26 MV/W and a sensitivity of 70.1 pW under an integration bandwidth of 1 kHz, with a total dc power consumption of 117 mW. The achieved sensitivity with this proposed coherent imaging transceiver is around ten times better compared with other state-of-the-art incoherent imagers. In Chapter 4, a spatial-orthogonal ASK transmitter architecture for high-speed terahertz wireless communication is presented. The self-sustaining oscillator-based transmitter architecture has an ultra-compact size and excellent power efficiency. With the proposed high-speed constant-load switch, significantly reduced modulation loss is achieved. Using polarization diversity and multi-level modulation, the throughput is largely enhanced. Array configuration is also adopted to enhance the link budget for higher signal quality and longer communication range. Fabricated in a 0.13-um SiGe BiCMOS technology, the 220-GHz transmitter prototype achieves an EIRP of 21 dBm and dc-to- THz-radiation efficiency of 0.7% in each spatial channel. A 24.4-Gb/s total data rate over a 10-cm communication range is demonstrated. With an external Teflon lens system, the demonstrated communication range is further extended to 52 cm. Compared with prior art, this prototype demonstrates much higher transmitter efficiency. In Chapter 5, an entirely-on-chip frequency-stabilization feedback mechanism is proposed, which avoids the use of both frequency dividers and off-chip references, achieving much lower system integration cost and power consumption. Using this mechanism, a 301.7-to-331.8-GHz source prototype is designed in a 0.13-um SiGe BiCMOS technology. According to the measurement, the source consumes a dc power of only 51.7 mW. The output phase noise is -71.1 and -75.2 dBc/Hz at 100 kHz and 1 MHz offset, respectively. A -13.9-dBm probed output power is also achieved. Overall, the prototype source demonstrates the largest output frequency range and lowest power consumption while achieving comparable phase noise and output power performances with respect to the state of the art. All the designs demonstrated in this thesis achieve good performances and push the state of the art forward, paving the way for implementation of more sophisticated terahertz circuits and systems for future applications

Dual-Band Transmitter and Receiver with Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz

This paper presents a transmitter (TX) and a receiver (RX) with bowtie-antenna and silicon lens for gas spectroscopy at 222-270 GHz, which are fabricated in IHP’s 0.13 μm SiGe BiCMOS technology. The TX and RX use two integrated local oscillators for 222 – 256 GHz and 250 – 270 GHz, which are switched for dual-band operation. Due to its directivity of about 27 dBi, the single integrated bowtie-antenna with silicon lens enables an EIRP of about 25 dBm for the TX, and therefore a considerably higher EIRP for the 2-band TX compared to previously reported systems. The double sideband noise temperature of the RX is 20,000 K (18.5 dB noise figure) as measured by the Y-factor method. Absorption spectroscopy of gaseous methanol is used as a measure for the performance of the gas spectroscopy system with TX- and RX-modules

CIRCUIT MODULES FOR SIX-PORT REFLECTOMETER ON CHIP

Broadband signal generator is an indispensable module for broadband Six-Port Reflectometer (SPR). To integrate a whole SPR system on a chip, the source must be compact. In this thesis, a three-stage voltage-controlled oscillator (VCO), using two parallel weak invertor-chain oscillators and sense amplifiers, is proposed and designed in a 0.13 µm CMOS process. These two parallel weak inverter-chain oscillators extend the low frequency operating range and the sense amplifiers expand the high frequency operation. The measurement results show that the oscillator can be tuned from 430 MHz to 12 GHz, which satisfies the targeted SPR operating frequency range. In order to expand the operating frequency band of the SPR, an introduction of the tuning mechanisms is necessary. Inductors and capacitors are the two basic components for the circuit modules of an SPR. Varactors are provided by process vendors. In this thesis, a novel differential active inductor is proposed and implemented in a 0.13 µm CMOS process. The measured self-resonance frequency is 6 GHz, which is the highest self-resonance frequency published thus far for a differential inductor. The proposed structure is further improved by adding a symmetrical negative resistor. Post layout shows a 10 GHz self-resonance frequency. A power divider is a common module in the SPR and microwave circuits. A new lumped-element power divider structure, which presents the strongest tolerance to parasitic resistors in capacitors and inductors, is proposed and analyzed in this thesis by even- and odd-mode method. Varactors and the above-mentioned active inductors are used to build the proposed power divider. The circuit is designed in 0.13 µm CMOS technology with a core area of 300 µm_265 µm. Post layout simulation yields a tuning range from 1 GHz to 7.5 GHz

Cryogenic single chip electron spin resonance detectors

Methods based on the electron spin resonance (ESR) phenomenon are used to study paramagnetic systems at temperatures that ranges from 1000 to below 1 K. Commercially available spectrometers achieve spin sensitivities in the order of 10^(10) spins/¿Hz at room temperature on sample with volumes in the order of few µl. This results can be improved by cooling the system at cryogenic temperatures, where the larger magnetization of paramagnetic samples cause the detected signal to increase. Furthermore operation at high field (frequency) turns as well in an improved spin sensitivity. For what it concern the spin sensitivity operation at cryogenic temperature and high frequency are thus beneficial. In 2008 the group of Dr. G. Boero proposed a novel detection method based on the integration of all the element responsible for the sensitivity on a single silicon chip. The methodology allowed to study sample with nanoliter scale volume with spin sensitivity that were at least 2 orders of magnitude better than the best commercial spectrometer. The proposed method has performance that are comparable with the one obtained on similar scales with micro-resonator based spectroscopy tool. During this thesis I have investigated the possibility of extending the use of the detection method from frequency that goes from 20 to 200 GHz and temperatures that range from 77 to 4 K. In this frame several domains were touched. First of all the design of CMOS silicon oscillators operating at frequency which are closed to the most modern technology frequency limit. The lack of model valid for the target frequencies and the needs of limiting the power consumption for matching the limited cooling power of cryogenic systems, made the subject a challenging and interesting research topic itself. The study produces a remarkable result of a system operating at about 170 GHz with a power consumption of about 3 mW at room temperature and about 1.5 mW at 4 K. With the realized devices the first measurements of integrated silicon CMOS LC oscillators at temperature below 77 K were performed. From this measurements we could confirm the presence of expected effect, such as minimum power consumption reduction and oscillator frequency increase. In addition to that, by measuring the frequency-bias characteristic, it's been noticed a succession of smooth region and sharp transitions. This jumps are tentatively attributed to the random telegraph signal (RTS) effect that is supposed to be the main responsible for the flicker noise in sub-micrometer MOS devices. Since the impact of RTS on the performance of highly scaled transistor performance is expected to grow with the technology scale down, measurement methods based on LC oscillator, that shows better sensitivity if compared with nowadays employed methods, might allow to better understand the mechanism governing the effect and to develop technological strategy for lowering the impact on the future CMOS technology node. The realized devices have finally demonstrated ESR performances that are comparable with the most recent publication done with miniaturized resonators on mass-limited samples. In fact sensitivity of about 10^(7) spins/¿Hz at 50 GHz and 300 K and of about 10^(6) spins/¿Hz at 28 GHz and 4 K, at least 3 orders of magnitude better then commercially available state of the art devices, have been proven

Dual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz

This paper presents a transmitter (TX) and a receiver (RX) with bowtie-antenna and silicon lens for gas spectroscopy at 222-270 GHz, which are fabricated in IHP's 0.13 μm SiGe BiCMOS technology. The TX and RX use two integrated local oscillators for 222 - 256 GHz and 250 - 270 GHz, which are switched for dual-band operation. Due to its directivity of about 27 dBi, the single integrated bowtie-antenna with silicon lens enables an EIRP of about 25 dBm for the TX, and therefore a considerably higher EIRP for the 2-band TX compared to previously reported systems. The double sideband noise temperature of the RX is 20,000 K (18.5 dB noise figure) as measured by the Y-factor method. Absorption spectroscopy of gaseous methanol is used as a measure for the performance of the gas spectroscopy system with TX- and RX-modules

A Two Channel Analog Front end Design AFE Design with Continuous Time Σ-Δ Modulator for ECG Signal

In this context, the AFE with 2-channels is described, which has high impedance for low power application of bio-medical electrical activity. The challenge in obtaining accurate recordings of biomedical signals such as EEG/ECG to study the human body in research work. This paper is to propose Multi-Vt in AFE circuit design cascaded with CT modulator. The new architecture is anticipated with two dissimilar input signals filtered from 2-channel to one modulator. In this methodology, the amplifier is low powered multi-VT Analog Front-End which consumes less power by applying dual threshold voltage. Type -I category 2 channel signals of the first mode: 50 and 150 Hz amplified from AFE are given to 2nd CT sigma-delta ADC. Depict the SNR and SNDR as 63dB and 60dB respectively, consuming the power of 11mW. The design was simulated in a 0.18 um standard UMC CMOS process at 1.8V supply. The AFE measured frequency response from 50 Hz to 360 Hz, depict the SNR and SNDR as 63dB and 60dB respectively, consuming the power of 11mW. The design was simulated in 0.18 m standard UMC CMOS process at 1.8V supply. The AFE measured frequency response from 50 Hz to 360 Hz, programmable gains from 52.6 dB to 72 dB, input referred noise of 3.5 μV in the amplifier bandwidth, NEF of 3

Describing broadband terahertz response of graphene FET detectors by a classical model

Direct power detectors based on field-effect transistors are becoming widely used for terahertz applications. However, accurate characterization at terahertz frequencies of such detectors is a challenging task. The high-frequency response is dominated by parasitic coupling and loss associated with contacts and overall layout of the component. Moreover, the performance of such detectors is complicated to predict since many different physical models are used to explain the high sensitivity at terahertz frequencies. This makes it hard to draw important conclusions about the underlying device physics for these detectors. For the first time, we demonstrate accurate and comprehensive characterization of graphene field-effect transistors from 1 GHz to 1.1 THz, simultaneously accessing the bias dependence, the scattering parameters, and the detector voltage responsivity. Within a frequency range of more than 1 THz, and over a wide bias range, we have shown that the voltage responsivity can be accurately described using a combination of a small-signal equivalent circuit model, and the second-order series expansion terms of the nonlinear dc $I-V$ characteristic. Without bias, the measured low-frequency responsivity was 0.3 kV/W with the input signal applied to the gate, and 2 kV/W with the input signal applied to the drain. The corresponding cut-off frequencies for the two cases were 140 GHz and 50 GHz, respectively. With a 300-GHz signal applied to the gate, a voltage responsivity of 1.8 kV/W was achieved at a drain-source current of 0.2 mA. The minimum noise equivalent power was below 30 pW/$\sqrt\mathrm{Hz}$ in cold mode. Our results show that detection of terahertz signals in graphene field-effect transistors can be described over a wide frequency range by the nonlinear carrier transport characteristic obtained at static electrical fields. This finding is important for explaining the mechanism of detection and for further development of terahertz detectors