Forward Body Biased Low Power 4.0-10.6 GHz Wideband Low Noise Amplifier

A forward body biased low power Low Noise Amplifier (LNA) is designed using Common Gate (CG) topology. By using current reuse technique between the first stage and second stage Common Source topology accompanied with forward body biasing leads to low power dissipation. A series to parallel tank circuit at this stage leads to wideband design. A shunt peaking inductor at the drain terminal of second stage causes the higher frequency peak to increase leading to wide bandwidth. Two CS cascade stages are used to increase the overall gain of the proposed LNA with a buffer stage at the output for output matching. The proposed LNA attained maximum gain of 26.39 dB with a gain greater than 16 dB over entire range. The circuit gives reflection coefficient less than – 10 dB with NF 2.7 dB. With Vdd of 0.925 V, a DC current of 8.32 mA is consumed giving 7.7 mW power consumption

RF Amplification and Filtering Techniques for Cellular Receivers

The usage of various wireless standards, such as Bluetooth, Wi-Fi, GPS, and 4G/5G cellular, has been continually increasing. In order to utilize the frequency bands efficiently and to support new communication standards with lower power consumption, lower occupied volume and at reduced costs, multimode transceivers, software defined radios (SDRs), cognitive radios, etc., have been actively investigated. Broadband behavior of a wireless receiver is typically defined by its front-end low-noise amplifier (LNA), whose design must consider trade-offs between input matching, noise figure (NF), gain, bandwidth, linearity, and voltage headroom in a given process technology. Moreover, monolithic RF wireless receivers have been trending toward high intermediatefrequency (IF) or superhetrodyne radios thanks to recent breakthroughs in silicon integration of band-pass channel-select filters. The main motivation is to avoid the common issues in the currently predominant zero/low-IF receivers, such as poor 2nd-order nonlinearity, sensitivity to 1/f (i.e. flicker) noise and time-variant dc offsets, especially in the fine CMOS technology. To avoid interferers and blockers at the susceptible image frequencies that the high-IF entails, band-pass filters (BPF) with high quality (Q) factor components for sharp transfer-function transition characteristics are now required. In addition, integrated low-pass filters (LPF) with strong rejection of out-of-band frequency components are essential building blocks in a variety of applications, such as telecommunications, video signal processing, anti-aliasing filtering, etc. Attention is drawn toward structures featuring low noise, small area, high in-/out-of-band linearity performance, and low-power consumption. This thesis comprises three main parts. In the first part (Chapters 2 and 3), we focus on the design and implementation of several innovative wideband low-noise (transconductance) amplifiers [LN(T)A] for wireless cellular applications. In the first design, we introduce new approaches to reduce the noise figure of the noise-cancellation LNAs without sacrificing the power consumption budget, which leads to NF of 2 dB without adding extra power consumption. The proposed LNAs also have the capability to be used in current-mode receivers, especially in discrete-time receivers, as in the form of low noise transconductance amplifier (LNTA). In the second design, two different two-fold noise cancellation approaches are proposed, which not only improve the noise performance of the design, but also achieve high linearity (IIP3=+4.25 dBm). The proposed LN(T)As are implemented in TSMC 28-nm LP CMOS technology to prove that they are suitable for applications such as sub-6 GHz 5G receivers. The second objective of this dissertation research is to invent a novel method of band-pass filtering, which leads to achieving very sharp and selective band-pass filtering with high linearity and low input referred (IRN) noise (Chapter 4). This technique improves the noise and linearity performance without adding extra clock phases. Hence, the duty cycle of the clock phases stays constant, despite the sophisticated improvements. Moreover, due to its sharp filtering, it can filter out high blockers of near channels and can increase the receiver’s blocker tolerance. With the same total capacitor size and clock duty cycle as in a 1st-order complex charge-sharing band-pass filter (CS BPF), the proposed design achieves 20 dB better out-of-band filtering compared to the prior-art 1st-order CS BPF and 10 dB better out-of-band filtering compared to the conventional 2nd-order C-CS BPF. Finally, the stop-band rejection of the discrete-time infinite-impulse response (IIR) lowpass filter is improved by applying a novel technique to enhance the anti-aliasing filtering (Chapter 5). The aim is to introduce a 4th-order charge rotating (CR) discrete-time (DT) LPF, which achieves the record of stop-band rejection of 120 dB by using a novel pseudolinear interpolation technique while keeping the sampling frequency and the capacitor values constant

Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies

The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. Achieving this entails intricate strategies such as advanced digital modulations, broader channel bandwidths, complex spectrum sharing, and carrier aggregation scenarios. A particularly challenging aspect arises in the form of non-contiguous aggregation of up to six carrier components across the frequency range 1 (FR1). This necessitates receiver front-ends to effectively reject out-of-band (OOB) interferences while maintaining high-performance in-band (IB) operation. Reconfigurability becomes pivotal in such dynamic environments, where frequency resource allocation, signal strength, and interference levels continuously change. Software-defined radios (SDRs) and cognitive radios (CRs) emerge as solutions, with direct RF-sampling receivers offering a suitable architecture in which the frequency translation is entirely performed in digital domain to avoid analog mixing issues. Moreover, direct RF- sampling receivers facilitate spectrum observation, which is crucial to identify free zones, and detect interferences. Acoustic and distributed filters offer impressive dynamic range and sharp roll off characteristics, but their bulkiness and lack of electronic adjustment capabilities limit their practicality. Active filters, on the other hand, present opportunities for integration in advanced CMOS technology, addressing size constraints and providing versatile programmability. However, concerns about power consumption, noise generation, and linearity in active filters require careful consideration.This thesis primarily focuses on the design and implementation of a low-voltage, low-power RFFE tailored for direct sampling receivers in 5G FR1 applications. The RFFE consists of a balun low-noise amplifier (LNA), a Q-enhanced filter, and a programmable gain amplifier (PGA). The balun-LNA employs noise cancellation, current reuse, and gm boosting for wideband gain and input impedance matching. Leveraging FD-SOI technology allows for programmable gain and linearity via body biasing. The LNA's operational state ranges between high-performance and high-tolerance modes, which are apt for sensitivityand blocking tests, respectively. The Q-enhanced filter adopts noise-cancelling, current-reuse, and programmable Gm-cells to realize a fourth-order response using two resonators. The fourth-order filter response is achieved by subtracting the individual response of these resonators. Compared to cascaded and magnetically coupled fourth-order filters, this technique maintains the large dynamic range of second-order resonators. Fabricated in 22-nm FD-SOI technology, the RFFE achieves 1%-40% fractional bandwidth (FBW) adjustability from 1.7 GHz to 6.4 GHz, 4.6 dB noise figure (NF) and an OOB third-order intermodulation intercept point (IIP3) of 22 dBm. Furthermore, concerning the implementation uncertainties and potential variations of temperature and supply voltage, design margins have been considered and a hybrid calibration scheme is introduced. A combination of on-chip and off-chip calibration based on noise response is employed to effectively adjust the quality factors, Gm-cells, and resonance frequencies, ensuring desired bandpass response. To optimize and accelerate the calibration process, a reinforcement learning (RL) agent is used.Anticipating future trends, the concept of the Q-enhanced filter extends to a multiple-mode filter for 6G upper mid-band applications. Covering the frequency range from 8 to 20 GHz, this RFFE can be configured as a fourth-order dual-band filter, two bandpass filters (BPFs) with an OOB notch, or a BPF with an IB notch. In cognitive radios, the filter’s transmission zeros can be positioned with respect to the carrier frequencies of interfering signals to yield over 50 dB blocker rejection

A 0.044-mm2 0.5-to-7-GHz resistor-plus-source-follower-feedback noise-cancelling LNA achieving a flat NF of 3.3±0.45 dB

A wideband noise-cancelling low-noise amplifier (LNA) combining resistor feedback and source-follower feedback (SFF) is proposed. The SFF facilitates upsizing of the feedback resistor to improve the gain and noise figure (NF), without compromising the input-impedance matching. Another benefit is that the noise contributions of both the feedback resistor and noise-cancelling transistors are significantly reduced. Fabricated in 65-nm CMOS, the LNA exhibits a voltage gain of 16.8 dB, and a flat NF of 3.3 ± 0.45 dB over a −3-dB bandwidth of 0.5 to 7 GHz. The power consumption is 11.3 mW at 1.2 V, and the die area is 0.044 mm2MOE (Min. of Education, S’pore)Accepted versio

Advanced Trends in Wireless Communications

Physical limitations on wireless communication channels impose huge challenges to reliable communication. Bandwidth limitations, propagation loss, noise and interference make the wireless channel a narrow pipe that does not readily accommodate rapid flow of data. Thus, researches aim to design systems that are suitable to operate in such channels, in order to have high performance quality of service. Also, the mobility of the communication systems requires further investigations to reduce the complexity and the power consumption of the receiver. This book aims to provide highlights of the current research in the field of wireless communications. The subjects discussed are very valuable to communication researchers rather than researchers in the wireless related areas. The book chapters cover a wide range of wireless communication topics