Microwave and RF Applications for Micro-resonator based Frequency Combs

Photonic integrated circuits that exploit nonlinear optics in order to generate and process signals all-optically have achieved performance far superior to that possible electronically - particularly with respect to speed. We review the recent achievements based in new CMOS-compatible platforms that are better suited than SOI for nonlinear optics, focusing on radio frequency (RF) and microwave based applications that exploit micro-resonator based frequency combs. We highlight their potential as well as the challenges to achieving practical solutions for many key applications. These material systems have opened up many new capabilities such as on-chip optical frequency comb generation and ultrafast optical pulse generation and measurement. We review recent work on a photonic RF Hilbert transformer for broadband microwave in-phase and quadrature-phase generation based on an integrated frequency optical comb. The comb is generated using a nonlinear microring resonator based on a CMOS compatible, high-index contrast, doped-silica glass platform. The high quality and large frequency spacing of the comb enables filters with up to 20 taps, allowing us to demonstrate a quadrature filter with more than a 5-octave (3 dB) bandwidth and an almost uniform phase response.Comment: 10 pages, 6 figures, 68 references. arXiv admin note: substantial text overlap with arXiv:1512.0174

On-chip Spiral Inductor/transformer Design And Modeling For Rf Applications

Passive components are indispensable in the design and development of microchips for high-frequency applications. Inductors in particular are used frequently in radio frequency (RF) IC\u27s such as low-noise amplifiers and oscillators. High performance inductor has become one of the critical components for voltage controlled oscillator (VCO) design, for its quality factor (Q) value directly affects the VCO phase noise. The optimization of inductor layout can improve its performance, but the improvement is limited by selected technology. Inductor performance is bounded by the thin routing metal and small distance from lossy substrate. On the other hand, the in-accurate inductor modeling further limits the optimization process. The on-chip inductor has been an important research topic since it was first proposed in early 1990\u27s. Significant amount of study has been accomplished and reported in literature; whereas some methods have been used in industry, but not released to public. It is of no doubt that a comprehensive solution is not exist yet. A comprehensive study of previous will be first address. Later author will point out the in-adequacy of skin effect and proximity effect as cause of current crowding in the inductor metal. A model method embedded with new explanation of current crowding is proposed and its applicability in differential inductor and balun is validated. This study leads to a robust optimization routine to improve inductor performance without any addition technology cost and development

Investigation on LIGA-MEMS and on-chip CMOS capacitors for a VCO application

Modern communication systems require high performance radio frequency (RF) and microwave circuits and devices. This is becoming increasingly challenging to realize in the content of cost/size constraints. Integrated circuits (ICs) satisfy the cost/size requirement, but performance is often sacri¯ced. For instance, high quality factor (Q factor) passive components are difficult to achieve in standard silicon-based IC processes.In recent years, microelectromechanical systems (MEMS) devices have been receiving increasing attention as a possible replacement for various on-chip passive elements, offering potential improvement in performance while maintaining high levels of integration. Variable capacitors (varactor) are common elements used in various applications. One of the MEMS variable capacitors that has been recently developed is built using deep X-ray lithography (as part of the LIGA process). This type of capacitor exhibits high quality factor at microwave frequencies.The complementary metal oxide semiconductor (CMOS) technology dominates the silicon IC process. CMOS becomes increasingly popular for RF applications due to its advantages in level of integration, cost and power consumption. This research demonstrates a CMOS voltage-controlled oscillator (VCO) design which is used to investigate methods, advantages and problems in integrating LIGA-MEMS devices to CMOS RF circuits, and to evaluate the performance of the LIGA-MEMS variable capacitor in comparison with the conventional on-chip CMOS varactor. The VCO was designed and fabricated using TSMC 0.18 micron CMOS technology. The core of the VCO, including transistors, resistors, and on-chip inductors was designed to connect to either an on-chip CMOS varactor or an off-chip LIGA-MEMS capacitor to oscillate between 2.6 GHz and 2.7 GHz. Oscillator phase noise analysis is used to compare the performance between the two capacitors. The fabricated VCO occupied an area of 1 mm^2.This initial attempt at VCO fabrication did not produce a functional VCO, so the performance of the capacitors with the fabricated VCO could not be tested. However, the simulation results show that with this LIGA-MEMS capacitor, a 6.4 dB of phase noise improvement at 300 kHz offset from the carrier is possible in a CMOS-based VCO design

Design of Wireless Power Transfer and Data Telemetry System for Biomedical Applications

With the advancement of biomedical instrumentation technologies sensor based remote healthcare monitoring system is gaining more attention day by day. In this system wearable and implantable sensors are placed outside or inside of the human body. Certain sensors are needed to be placed inside the human body to acquire the information on the vital physiological phenomena such as glucose, lactate, pH, oxygen, etc. These implantable sensors have associated circuits for sensor signal processing and data transmission. Powering the circuit is always a crucial design issue. Batteries cannot be used in implantable sensors which can come in contact with the blood resulting in serious health risks. An alternate approach is to supply power wirelessly for tether-less and battery- less operation of the circuits.Inductive power transfer is the most common method of wireless power transfer to the implantable sensors. For good inductive coupling, the inductors should have high inductance and high quality factor. But the physical dimensions of the implanted inductors cannot be large due to a number of biomedical constraints. Therefore, there is a need for small sized and high inductance, high quality factor inductors for implantable sensor applications. In this work, design of a multi-spiral solenoidal printed circuit board (PCB) inductor for biomedical application is presented. The targeted frequency for power transfer is 13.56 MHz which is within the license-free industrial, scientific and medical (ISM) band. A figure of merit based optimization technique has been utilized to optimize the PCB inductors. Similar principal is applied to design on-chip inductor which could be a potential solution for further miniaturization of the implantable system. For layered human tissue the optimum frequency of power transfer is 1 GHz for smaller coil size. For this reason, design and optimization of multi-spiral solenoidal integrated inductors for 1 GHz frequency is proposed. Finally, it is demonstrated that the proposed inductors exhibit a better overall performance in comparison with the conventional inductors for biomedical applications

Compact Millimeter-Wave Bandpass Filters Using Quasi-Lumped Elements in 0.13-um (Bi)-CMOS Technology for 5G Wireless Systems

© 2019 IEEE.A design methodology for a compact millimeter-wave on-chip bandpass filter (BPF) is presented in this paper. Unlike the previously published works in the literature, the presented method is based on quasi-lumped elements, which consists of a resonator with enhanced self-coupling and metal-insulator-metal capacitors. Thus, this approach provides inherently compact designs comparing with the conventional distributed elements-based ones. To fully understand the insight of the approach, simplified LC-equivalent circuit models are developed. To further demonstrate the feasibility of using this approach in practice, the resonator and two compact BPFs are designed using the presented models. All three designs are fabricated in a standard 0.13- \mu \text{m} (Bi)-CMOS technology. The measured results show that the resonator can generate a notch at 47 GHz with the attenuation better than 28 dB due to the enhanced self-coupling. The chip size, excluding the pads, is only 0.096 \times 0.294 mm 2. In addition, using the resonator for BPF designs, the first BPF has one transmission zero at 58 GHz with a peak attenuation of 23 dB. The center frequency of this filter is 27 GHz with an insertion loss of 2.5 dB, while the return loss is better than 10 dB from 26 to 31 GHz. The second BPF has two transmission zeros, and a minimum insertion loss of 3.5 dB is found at 29 GHz, while the return loss is better than 10 dB from 26 GHz to 34 GHz. Also, more than 20-dB stopband attenuation is achieved from dc to 20.5 GHz and from 48 to 67 GHz. The chip sizes of these two BPFs, excluding the pads, are only 0.076\times 0.296 mm 2 and 0.096\times 0.296 mm 2, respectively.Peer reviewe

A dual-mode Q-enhanced RF front-end filter for 5 GHz WLAN and UWB with NB interference rejection

The 5 GHz Wireless LAN (802.11a) is a popular standard for wireless indoor communications providing moderate range and speed. Combined with the emerging ultra Wideband standard (UWB) for short range and high speed communications, the two standards promise to fulfil all areas of wireless application needs. However, due to the overlapping of the two spectrums, the stronger 802.11a signals tend to interfere causing degradation to the UWB receiver. This presents one of the main technical challenges preventing the wide acceptance of UWB. The research work presented in this thesis is to propose a low cost RF receiver front-end filter topology that would resolve the narrowband (NB) interference to UWB receiver while being operable in both 802.11a mode and UWB mode. The goal of the dual mode filter design is to reduce cost and complexity by developing a fully integrated front-end filter. The filter design utilizes high Q passive devices and Q-enhancement technique to provide front-end channel-selection in NB mode and NB interference rejection in UWB mode. In the 802.11a NB mode, the filter has a tunable gain of 4 dB to 25 dB, NF of 8 dB and an IIP3 between -47 dBm and -18 dBm. The input impedance is matched at -16 dB. The frequency of operation can be tuned from 5.15 GHz to 5.35 GHz. In the UWB mode, the filter has a gain of 0 dB to 8 dB across 3.1 GHz to 9 GHz. The filter can reject the NB interference between 5.15 GHz to 5.35 GHz at up to 60 dB. The Q of the filter is tunable up to a 250 while consuming a maximum of 23.4 mW of power. The fully integrated dual mode filter occupies a die area of 1.1 mm2

Design of CMOS LC voltage controlled oscillators

This work presents the design and implementation of CMOS LC voltage controlled oscillators. On-chip planar spiral inductors and PMOS inversion mode varactors were utilized to implement the resonator. Two voltage controlled oscillators (VCOs) were realized as a part of this work, one designed to operate at 1.1 GHz while the second at 1.8 GHz. Both VCOs were implemented in a scalable digital CMOS process, with the former in a 1.5 micron CMOS process and the latter in a 0.5 micron technology. A simulation based methodology was adopted to arrive at a simple pi model used to model the metal and substrate related losses responsible for deteriorating the integrated inductor\u27s performance. Geometry based optimization techniques were utilized to arrive at an inductor geometry that ensures reasonable quality factor. In addition to the core VCO structure a host of test structures have been incorporated in order to carry out two-port network measurements in the future. Such measurements should enable one to gain a greater insight into the integrated inductor and varactor\u27s performance