Power amplifier improvement techniques/circuits in 0.35 micron SiGe HBT technology for 5 ghz wireless LAN band

In this thesis, a 5 GHz radio frequency power amplifier for IEEE 802.11a WLAN applications is designed, the ideas of on-chip power combining and using transmission lines as an RF on-chip choke are tested and layouts are drawn. The power amplifier employs SiGe HBT’s in AMS 0.35 ´m BiCMOS process and it is designed to operate in Class A mode with a supply voltage of 3 Volts. Since the power amplifier is the final block and the final amplification stage of the transmitter chain in a wireless system, it must produce enough RF power to overcome the channel losses. At the same time, the power produced by the power amplifier should obey the power levels dictated by the operating standard. Therefore, in this work much consideration is given to design a power amplifier which provides enough output power for IEEE 802.11a WLAN standard. The power amplifier is designed to operate in Class A, and the bias points are chosen accordingly in order to preserve linearity. After the design of a single stage power amplifier, different versions of the circuit are designed and layouts are drawn. To decrease the dye area and the parasitic losses, the inductor which is used as the RF choke is replaced with capacitively loaded transmission lines. Moreover, in order to improve the linearity and obtain higher output power levels, two single stage power amplifiers are combined via on-chip Wilkinson power combiner made of lumped elements. Simulations are performed in ADS and Cadence environments in a parallel fashion

High Linearity Millimeter Wave Power Amplifiers with Novel Linearizer Techniques

Millimeter-wave communications have experienced phenomenal growth in recent years when limited frequency spectrum is occupied by the ever-developing communication services. The power amplifier, as the key component in the transmitter/receiver module of communication systems, affects performance of the whole system directly and receives much attention. For minimized distortion and optimum system performance, the non-constant en- velope modulation schemes used in communication systems have challenging requirements on linearity. As linearity is related to communication quality directly, several linearization techniques, such as predistortion and feedforward, are applied to power amplifier design. Predistortion method has the advantages over other techniques in relatively simple struc- ture and reasonable linearity improvement. But current predistortion circuits have quite limited performance improvement and relatively large insertion loss, which indicate the need for further research. In most of millimeter-wave amplifier design, great effort has been spent on output power or gain, while linearity is often ignored. As almost all the predistortion circuits operate at the RF frequencies, the linearized millimeter-wave com- munication circuit is still relatively immature and very challenging. This project is dedicated to solve the linearity problem faced by millimeter-wave power amplifier in communication systems, which lacks of e®ective techniques in this field. Linearity improvement with the predistortion method will be the key issue in this project and some original ideas for predistortion circuit design will be applied to millimeter-wave amplifiers. In this thesis, several predistortion circuits with novel structure were proposed, which provide a new approach for linearity improvement for millimeter-wave power am- plifier. A millimeter-wave power ampli¯er for LMDS applications built on GaAs pHEMT technology was developed to a high engineering standard, which works as the test bench for linearization. Actual operation and parasitic elements at tens of gigahertz have been taken into consideration during the design. Firstly, two novel predistorter structures based on the amplifier were proposed, one is based on an amplifier with a fixed bias circuit and the other is based on an amplifier with a nonlinear signal dependant bias circuit. These novel structures can improve the linearity while improving other metrics simultaneously, which can effectively solve the problem of insertion loss faced by the conventional structures. Besides this, an original predistortion circuit design methodology derived from frequency to signal amplitude transformation was proposed. Based on this methodology, several transfer functions were proposed and related predistortion circuits were built to linearize the power amplifier. As this methodology is quite different from the traditional approach, it can improve the linearity signifficantly while other metrics are affected slightly and has a broad prospect for application

High Linearity Millimeter Wave Power Amplifiers with Novel Linearizer Techniques

Millimeter-wave communications have experienced phenomenal growth in recent years when limited frequency spectrum is occupied by the ever-developing communication services. The power amplifier, as the key component in the transmitter/receiver module of communication systems, affects performance of the whole system directly and receives much attention. For minimized distortion and optimum system performance, the non-constant en- velope modulation schemes used in communication systems have challenging requirements on linearity. As linearity is related to communication quality directly, several linearization techniques, such as predistortion and feedforward, are applied to power amplifier design. Predistortion method has the advantages over other techniques in relatively simple struc- ture and reasonable linearity improvement. But current predistortion circuits have quite limited performance improvement and relatively large insertion loss, which indicate the need for further research. In most of millimeter-wave amplifier design, great effort has been spent on output power or gain, while linearity is often ignored. As almost all the predistortion circuits operate at the RF frequencies, the linearized millimeter-wave com- munication circuit is still relatively immature and very challenging. This project is dedicated to solve the linearity problem faced by millimeter-wave power amplifier in communication systems, which lacks of e®ective techniques in this field. Linearity improvement with the predistortion method will be the key issue in this project and some original ideas for predistortion circuit design will be applied to millimeter-wave amplifiers. In this thesis, several predistortion circuits with novel structure were proposed, which provide a new approach for linearity improvement for millimeter-wave power am- plifier. A millimeter-wave power ampli¯er for LMDS applications built on GaAs pHEMT technology was developed to a high engineering standard, which works as the test bench for linearization. Actual operation and parasitic elements at tens of gigahertz have been taken into consideration during the design. Firstly, two novel predistorter structures based on the amplifier were proposed, one is based on an amplifier with a fixed bias circuit and the other is based on an amplifier with a nonlinear signal dependant bias circuit. These novel structures can improve the linearity while improving other metrics simultaneously, which can effectively solve the problem of insertion loss faced by the conventional structures. Besides this, an original predistortion circuit design methodology derived from frequency to signal amplitude transformation was proposed. Based on this methodology, several transfer functions were proposed and related predistortion circuits were built to linearize the power amplifier. As this methodology is quite different from the traditional approach, it can improve the linearity signifficantly while other metrics are affected slightly and has a broad prospect for application

Continuous-time low-pass filters for integrated wideband radio receivers

This thesis concentrates on the design and implementation of analog baseband continuous-time low-pass filters for integrated wideband radio receivers. A total of five experimental analog baseband low-pass filter circuits were designed and implemented as a part of five single-chip radio receivers in this work. After the motivation for the research work presented in this thesis has been introduced, an overview of analog baseband filters in radio receivers is given first. In addition, a review of the three receiver architectures and the three wireless applications that are adopted in the experimental work of this thesis is presented. The relationship between the integrator non-idealities and integrator Q-factor, as well as the effect of the integrator Q-factor on the filter frequency response, are thoroughly studied on the basis of a literature review. The theoretical study that is provided is essential for the gm-C filter synthesis with non-ideal lossy integrators that is presented after the introduction of different techniques to realize integrator-based continuous-time low-pass filters. The filter design approach proposed for gm-C filters is original work and one of the main points in this thesis, in addition to the experimental IC implementations. Two evolution versions of fourth-order 10-MHz opamp-RC low-pass filters designed and implemented for two multicarrier WCDMA base-station receivers in a 0.25-µm SiGe BiCMOS technology are presented, along with the experimental results of both the low-pass filters and the corresponding radio receivers. The circuit techniques that were used in the three gm-C filter implementations of this work are described and a common-mode induced even-order distortion in a pseudo-differential filter is analyzed. Two evolution versions of fifth-order 240-MHz gm-C low-pass filters that were designed and implemented for two single-chip WiMedia UWB direct-conversion receivers in a standard 0.13-µm and 65-nm CMOS technology, respectively, are presented, along with the experimental results of both the low-pass filters and the second receiver version. The second UWB filter design was also embedded with an ADC into the baseband of a 60-GHz 65-nm CMOS radio receiver. In addition, a third-order 1-GHz gm-C low-pass filter was designed, rather as a test structure, for the same receiver. The experimental results of the receiver and the third gm-C filter implementation are presented

Highly efficient linear CMOS power amplifiers for wireless communications

The rapidly expanding wireless market requires low cost, high integration and high performance of wireless communication systems. CMOS technology provides benefits of cost effectiveness and higher levels of integration. However, the design of highly efficient linear CMOS power amplifier that meets the requirement of advanced communication standards is a challenging task because of the inherent difficulties in CMOS technology. The objective of this research is to realize PAs for wireless communication systems that overcoming the drawbacks of CMOS process, and to develop design approaches that satisfying the demands of the industry. In this dissertation, a cascode bias technique is proposed for improving linearity and reliability of the multi-stage cascode CMOS PA. In addition, to achieve load variation immunity characteristic and to enhance matching and stability, a fully-integrated balanced PA is implemented in a 0.18-m CMOS process. A triple-mode balanced PA using switched quadrature coupler is also proposed, and this work saved a large amount of quiescent current and further improved the efficiency in the back-off power. For the low losses and a high quality factor of passive output combining, a transformer-based quadrature coupler was implemented using integrated passive device (IPD) process. Various practical approaches for linear CMOS PA are suggested with the verified results, and they demonstrate the potential PA design approach for WCDMA applications using a standard CMOS technology.PhDCommittee Chair: Kenney, J. Stevenson; Committee Member: Jongman Kim; Committee Member: Kohl, Paul A.; Committee Member: Kornegay, Kevin T.; Committee Member: Lee, Chang-H

Analysis and Design of CMOS Radio-Frequency Power Amplifiers

The continuous advancement of semiconductor technologies, especially CMOS technology, has enabled exponential growth of the wireless communication industry. This explosive growth in turn has completely changed people’s lives. The CMOS feature size scale down greatly benefits digital logic integrations, which result in more powerful, versatile, and economical digital signal processing. Further research and development has pushed analog, mixed-signal, and even radio-frequency (RF) circuit blocks to be implemented and integrated in CMOS. Future generations of wireless communication call for even further level of integration, and as of now, the only circuit block that is rarely integrated in CMOS along with other parts of the system is the power amplifier (PA). Due to the fact that the PA in a wireless communication system is the most power-hungry circuit block, the integration of RF PA in CMOS would potentially not only save the cost of the wireless communication system real estate, but also reduce power consumption since die-to-die connection loss can be eliminated. RF PA design involves handling large amounts of voltage and current at the radio frequencies, which in the present wireless communication standards are in the range of giga-hertz. Therefore, a good understanding of many aspects related to RF PA design is necessary. Theoretical analysis of the communication system, nonlinear effects of the PA, as well as the impedance matching network is systematically presented. The analysis of the nonlinear effects proposes a formal mathematical description of the multitone nonlinearity, and through its relationship with two-tone test, the proposed PA design methodology would greatly reduce the design time while improving the design accuracy. A thorough analysis of the available architecture and design techniques for efficiency and linearity enhancement of RF PA shows that despite tremendous amounts of research and development into this topic, the fundamental tradeoff between the two still limits the RF PA implementation largely within SiGe, GaAs, and InP technologies. A RF PA for Wideband Code-Division Multiple Access (WCDMA) application standard is proposed, designed, and implemented in CMOS that demonstrates the proposed segmentation technique that resolved the main tradeoff between power efficiency and linearity. The innovative architecture developed in this work is not limited to applications in the WCDMA communication protocol or the CMOS technology, although CMOS implementation would take advantage of the readily available digital resources

Analysis and Design of CMOS Radio-Frequency Power Amplifiers

The continuous advancement of semiconductor technologies, especially CMOS technology, has enabled exponential growth of the wireless communication industry. This explosive growth in turn has completely changed people’s lives. The CMOS feature size scale down greatly benefits digital logic integrations, which result in more powerful, versatile, and economical digital signal processing. Further research and development has pushed analog, mixed-signal, and even radio-frequency (RF) circuit blocks to be implemented and integrated in CMOS. Future generations of wireless communication call for even further level of integration, and as of now, the only circuit block that is rarely integrated in CMOS along with other parts of the system is the power amplifier (PA). Due to the fact that the PA in a wireless communication system is the most power-hungry circuit block, the integration of RF PA in CMOS would potentially not only save the cost of the wireless communication system real estate, but also reduce power consumption since die-to-die connection loss can be eliminated. RF PA design involves handling large amounts of voltage and current at the radio frequencies, which in the present wireless communication standards are in the range of giga-hertz. Therefore, a good understanding of many aspects related to RF PA design is necessary. Theoretical analysis of the communication system, nonlinear effects of the PA, as well as the impedance matching network is systematically presented. The analysis of the nonlinear effects proposes a formal mathematical description of the multitone nonlinearity, and through its relationship with two-tone test, the proposed PA design methodology would greatly reduce the design time while improving the design accuracy. A thorough analysis of the available architecture and design techniques for efficiency and linearity enhancement of RF PA shows that despite tremendous amounts of research and development into this topic, the fundamental tradeoff between the two still limits the RF PA implementation largely within SiGe, GaAs, and InP technologies. A RF PA for Wideband Code-Division Multiple Access (WCDMA) application standard is proposed, designed, and implemented in CMOS that demonstrates the proposed segmentation technique that resolved the main tradeoff between power efficiency and linearity. The innovative architecture developed in this work is not limited to applications in the WCDMA communication protocol or the CMOS technology, although CMOS implementation would take advantage of the readily available digital resources

Low-power CMOS front-ends for wireless personal area networks

The potential of implementing subthreshold radio frequency circuits in deep sub-micron CMOS technology was investigated for developing low-power front-ends for wireless personal area network (WPAN) applications. It was found that the higher transconductance to bias current ratio in weak inversion could be exploited in developing low-power wireless front-ends, if circuit techniques are employed to mitigate the higher device noise in subthreshold region. The first fully integrated subthreshold low noise amplifier was demonstrated in the GHz frequency range requiring only 260 μW of power consumption. Novel subthreshold variable gain stages and down-conversion mixers were developed. A 2.4 GHz receiver, consuming 540 μW of power, was implemented using a new subthreshold mixer by replacing the conventional active low noise amplifier by a series-resonant passive network that provides both input matching and voltage amplification. The first fully monolithic subthreshold CMOS receiver was also implemented with integrated subthreshold quadrature LO (Local Oscillator) chain for 2.4 GHz WPAN applications. Subthreshold operation, passive voltage amplification, and various low-power circuit techniques such as current reuse, stacking, and differential cross coupling were combined to lower the total power consumption to 2.6 mW. Extremely compact resistive feedback CMOS low noise amplifiers were presented as a cost-effective alternative to narrow band LNAs using high-Q inductors. Techniques to improve linearity and reduce power consumption were presented. The combination of high linearity, low noise figure, high broadband gain, extremely small die area and low power consumption made the proposed LNA architecture a compelling choice for many wireless applications.Ph.D.Committee Chair: Laskar, Joy; Committee Member: Chakraborty, Sudipto; Committee Member: Chang, Jae Joon; Committee Member: Divan, Deepakraj; Committee Member: Kornegay, Kevin; Committee Member: Tentzeris, Emmanoui

DESIGN OF A GAAS DISTRIBUTED AMPLIFIER WITH LC TRAPS BASED BROADBAND LINEARIZATION

Increasing the linearity of power amplifiers has been an important area of research because its signal integrity influences the performance of the entire transreceiver system and there are strict regulatory requirements on them. Due to the nonlinear behaviour of power amplifiers, third order intermodulation products are generated close to the desired signals and cannot be removed by filters. Increasing linearity will help bring these distortion products closer to the noise floor. However, it is not an easy task to increase linearity without trading off output power. To maintain the same level of output power generated but with higher linearity, many techniques, each with its own pros and cons, have been implemented to linearize an amplifier. Techniques involving feedback are seriously limited in terms of modulation bandwidth whereas methods such as predistortion and feedforward are very difficult to implement. This project seeks to use a simple method of placing terminations directly to the distributed amplifier (DA), making it a device level linearization technique and can be used in addition to the other system level techniques mentioned earlier. To increase linearity over a broad bandwidth of 0.5 to 3.0 GHz, this work proposes using low impedance terminations (LC traps) at the envelope frequency to the input and output of several distributed amplifiers. This research is novel since this is the first time broadband improvement in linearity has been demonstrated using the LC trap method. Two design iterations were completed (first design iteration has four variants to test the output trap while the second design iteration has three variants to test the input trap). The low impedance terminations are implemented using inductor-capacitor networks that are external to the monolithic microwave integrated circuit (MMIC). Design and layout of the DAs were carried out using Agilent’s Advanced Design System (ADS). Results show that placing the traps at the output of the DA does not truly affect the linearity of the device at lower frequencies but provide an improvement of 1.6 dB and 3.4 dB to the third-order output intercept point (OIP3) at 2.5 GHz and 3.0 GHz, respectively. With traps at the input, measurement results at -5 dBm input power, viii 1.375 V base bias (61 mA total collector current) and 10 MHz two tone spacing show a broadband improvement throughout the band (0.5 GHz to 3.0 GHz) of 3.3 dB to 7.4 dB in OIP3. Furthermore, the OIP3 is increased to 19.2 dB above P1dB. Results show that the improvement in OIP3 comes without lowering gain, return loss or P1dB and without causing any stability problems