An Energy-Efficient Reconfigurable Mobile Memory Interface for Computing Systems

The critical need for higher power efficiency and bandwidth transceiver design has significantly increased as mobile devices, such as smart phones, laptops, tablets, and ultra-portable personal digital assistants continue to be constructed using heterogeneous intellectual properties such as central processing units (CPUs), graphics processing units (GPUs), digital signal processors, dynamic random-access memories (DRAMs), sensors, and graphics/image processing units and to have enhanced graphic computing and video processing capabilities. However, the current mobile interface technologies which support CPU to memory communication (e.g. baseband-only signaling) have critical limitations, particularly super-linear energy consumption, limited bandwidth, and non-reconfigurable data access. As a consequence, there is a critical need to improve both energy efficiency and bandwidth for future mobile devices.;The primary goal of this study is to design an energy-efficient reconfigurable mobile memory interface for mobile computing systems in order to dramatically enhance the circuit and system bandwidth and power efficiency. The proposed energy efficient mobile memory interface which utilizes an advanced base-band (BB) signaling and a RF-band signaling is capable of simultaneous bi-directional communication and reconfigurable data access. It also increases power efficiency and bandwidth between mobile CPUs and memory subsystems on a single-ended shared transmission line. Moreover, due to multiple data communication on a single-ended shared transmission line, the number of transmission lines between mobile CPU and memories is considerably reduced, resulting in significant technological innovations, (e.g. more compact devices and low cost packaging to mobile communication interface) and establishing the principles and feasibility of technologies for future mobile system applications. The operation and performance of the proposed transceiver are analyzed and its circuit implementation is discussed in details. A chip prototype of the transceiver was implemented in a 65nm CMOS process technology. In the measurement, the transceiver exhibits higher aggregate data throughput and better energy efficiency compared to prior works

Time-Mode Analog Circuit Design for Nanometric Technologies

Rapid scaling in technology has introduced new challenges in the realm of traditional analog design. Scaling of supply voltage directly impacts the available voltage-dynamic-range. On the other hand, nanometric technologies with fT in the hundreds of GHz range open opportunities for time-resolution-based signal processing. With reduced available voltage-dynamic-range and improved timing resolution, it is more convenient to devise analog circuits whose performance depends on edge-timing precision rather than voltage levels. Thus, instead of representing the data/information in the voltage-mode, as a difference between two node voltages, it should be represented in time-mode as a time-difference between two rising and/or falling edges. This dissertation addresses the feasibility of employing time-mode analog circuit design in different applications. Specifically: 1) Time-mode-based quanitzer and feedback DAC of SigmaDelta ADC. 2) Time-mode-based low-THD 10MHz oscillator, 3) A Spur-Frequency Boosting PLL with -74dBc Reference-Spur Rejection in 90nm Digital CMOS. In the first project, a new architectural solution is proposed to replace the DAC and the quantizer by a Time-to-Digital converter. The architecture has been fabricated in 65nm and shows that this technology node is capable of achieving a time-matching of 800fs which has never been reported. In addition, a competitive figure-of-merit is achieved. In the low-THD oscillator, I proposed a new architectural solution for synthesizing a highly-linear sinusoidal signal using a novel harmonic rejection approach. The chip is fabricated in 130nm technology and shows an outstanding performance compared to the state of the art. The designed consumes 80% less power; consumes less area; provides much higher amplitude while being composed of purely digital circuits and passive elements. Last but not least, the spur-frequency boosting PLL employs a novel technique that eliminates the reference spurs. Instead of adding additional filtering at the reference frequency, the spur frequency is boosted to higher frequency which is, naturally, has higher filtering effects. The prototype is fabricated in 90nm digital CMOS and proved to provide the lowest normalized reference spurs ever reported

Flexible Receivers in CMOS for Wireless Communication

Consumers are pushing for higher data rates to support more services that are introduced in mobile applications. As an example, a few years ago video-on-demand was only accessed through landlines, but today wireless devices are frequently used to stream video. To support this, more flexible network solutions have merged in 4G, introducing new technical problems to the mobile terminal. New techniques are thus needed, and this dissertation explores five different ideas for receiver front-ends, that are cost-efficient and flexible both in performance and operating frequency. All ideas have been implemented in chips fabricated in 65 nm CMOS technology and verified by measurements. Paper I explores a voltage-mode receiver front-end where sub-threshold positive feedback transistors are introduced to increase the linearity in combination with a bootstrapped passive mixer. Paper II builds on the idea of 8-phase harmonic rejection, but simplifies it to a 6-phase solution that can reject noise and interferers at the 3rd order harmonic of the local oscillator frequency. This provides a good trade-off between the traditional quadrature mixer and the 8- phase harmonic rejection mixer. Furthermore, a very compact inductor-less low noise amplifier is introduced. Paper III investigates the use of global negative feedback in a receiver front-end, and also introduces an auxiliary path that can cancel noise from the main path. In paper IV, another global feedback based receiver front-end is designed, but with positive feedback instead of negative. By introducing global positive feedback, the resistance of the transistors in a passive mixer-first receiver front-end can be reduced to achieve a lower noise figure, while still maintaining input matching. Finally, paper V introduces a full receiver chain with a single-ended to differential LNA, current-mode downconversion mixers, and a baseband circuity that merges the functionalities of the transimpedance amplifier, channel-select filter, and analog-to-digital converter into one single power-efficient block

Energy-Efficient Wireless Connectivity and Wireless Charging For Internet-of-Things (IoT) Applications

During the recent years, the Internet-of-Things (IoT) has been rapidly evolving. It is indeed the future of communication that has transformed Things of the real world into smarter devices. To date, the world has deployed billions of “smart” connected things. Predictions say there will be 10’s of billions of connected devices by 2025 and in our lifetime we will experience life with a trillion-node network. However, battery lifespan exhibits a critical barrier to scaling IoT devices. Replacing batteries on a trillion-sensor scale is a logistically prohibitive feat. Self-powered IoT devices seems to be the right direction to stand up to that challenge. The main objective of this thesis is to develop solutions to achieve energy-efficient wireless-connectivity and wireless-charging for IoT applications. In the first part of the thesis, I introduce ultra-low power radios that are compatible with the Bluetooth Low-Energy (BLE) standard. BLE is considered as the preeminent protocol for short-range communications that support transmission ranges up to 10’s of meters. Number of low power BLE transmitter (TX) and receiver (RX) architectures have been designed, fabricated and tested in different planar CMOS and FinFET technologies. The low power operation is achieved by combining low power techniques in both the network and physical layers, namely: backchannel communication, duty-cycling, open-loop transmission/reception, PLL-less architectures, and mixer-first architectures. Further novel techniques have been proposed to further reduce the power the consumption of the radio design, including: a fast startup time and low startup energy crystal oscillators, an antenna-chip co-design approach for quadrature generation in the RF path, an ultra-low power discrete-time differentiator-based Gaussian Frequency Shift Keying (GFSK) demodulation scheme, an oversampling GFSK modulation/demodulation scheme for open loop transmission/reception and packet synchronization, and a cell-based design approach that allows automation in the design of BLE digital architectures. The implemented BLE TXs transmit fully-compliant BLE advertising packet that can be received by commercial smartphone. In the second part of the thesis, I introduce passive nonlinear resonant circuits to achieve wide-band RF energy harvesting and robust wireless power transfer circuits. Nonlinear resonant circuits modeled by the Duffing nonlinear differential equation exhibit interesting hysteresis characteristics in their frequency and amplitude responses that are exploited in designing self-adaptive wireless charging systems. In the magnetic-resonance wireless power transfer scenario, coupled nonlinear resonators are proposed to maintain the power transfer level and efficiency over a range of coupling factors without active feedback control circuitry. Coupling factor depends on the transmission distance, lateral, and angular misalignments between the charging pad and the device. Therefore, nonlinear resonance extends the efficient charging zones of a wireless charger without the requirement for a precise alignment.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/169842/1/omaratty_1.pd

Novel RF/Microwave Circuits And Systems for Lab on-Chip/on-Board Chemical Sensors

Recent research focuses on expanding the use of RF/Microwave circuits and systems to include multi-disciplinary applications. One example is the detection of the dielectric properties of chemicals and bio-chemicals at microwave frequencies, which is useful for pharmaceutical applications, food and drug safety, medical diagnosis and material characterization. Dielectric spectroscopy is also quite relevant to detect the frequency dispersive characteristics of materials over a wide frequency range for more accurate detection. In this dissertation, on-chip and on-board solutions for microwave chemical sensing are proposed. An example of an on-chip dielectric detection technique for chemical sensing is presented. An on-chip sensing capacitor, whose capacitance changes when exposed to material under test (MUT), is a part of an LC voltage-controlled oscillator (VCO). The VCO is embedded inside a frequency synthesizer to convert the change in the free runing frequency frequency of the VCO into a change of its input voltage. The system is implemented using 90 nm CMOS technology and the permittivities of MUTs are evaluated using a unique detection procedure in the 7-9 GHz frequency range with an accuracy of 3.7% in an area of 2.5 × 2.5 mm^2 with a power consumption of 16.5 mW. The system is also used for binary mixture detection with a fractional volume accuracy of 1-2%. An on-board miniaturized dielectric spectroscopy system for permittivity detec- tion is also presented. The sensor is based on the detection of the phase difference be- tween the input and output signals of cascaded broadband True-Time-Delay (TTD) cells. The sensing capacitor exposed to MUTs is a part of the TTD cell. The change of the permittivity results in a change of the phase of the microwave signal passing through the TTD cell. The system is fabricated on Rogers Duroid substrates with a total area of 8 × 7.2 cm2. The permittivities of MUTs are detected in the 1-8 GHz frequency range with a detection accuracy of 2%. Also, the sensor is used to extract the fractional volumes of mixtures with accuracy down to 1%. Additionally, multi-band and multi-standard communication systems motivate the trend to develop broadband front-ends covering all the standards for low cost and reduced chip area. Broadband amplifiers are key building blocks in wideband front-ends. A broadband resistive feedback low-noise amplifier (LNA) is presented using a composite cross-coupled CMOS pair for a higher gain and reduced noise figure. The LNA is implemented using 90 nm CMOS technology consuming 18 mW in an area of 0.06 mm2. The LNA shows a gain of 21 dB in the 2-2300 MHz frequency range, a minimum noise figure of 1.4 dB with an IIP3 of -1.5 dBm. Also, a four-stage distributed amplifier is presented providing bandwidth extension with 1-dB flat gain response up to 16 GHz. The flat extended bandwidth is provided using coupled inductors in the gate line with series peaking inductors in the cascode gain stages. The amplifier is fabricated using 180 nm CMOS technology in an area of 1.19 mm2 achieving a power gain of 10 dB, return losses better than 16 dB, noise figure of 3.6-4.9 dB and IIP3 of 0 dBm with 21 mW power consumption. All the implemented circuits and systems in this dissertation are validated, demonstrated and published in several IEEE Journals and Conferences