Monolithic microwave integrated circuits: Interconnections and packaging considerations

Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance

Characterization of MMIC devices for active array antennas

Certain aspects of monolithic microwave integrated circuit (MMIC) interconnectivity were investigated. Considerations that lead to preserving the inherently reproducible characteristics of the MMIC are proposed. It is shown that at radio frequencies (RF) greater than 20 GHz, the transition from the MMIC device to other transmission media must be an accurate RF match. It is proposed that the RF match is sufficiently critical to include the transition as part of the delivered MMIC package. The model to analyze several transitions is presented. This model consists of a succession of abrupt discontinuities in printed circuit transmission lines. The analysis of these discontinuities is achieved by the Spectral Galerkin technique, to establish the modes and mode matching, to generate the generalized S parameters of the individual discontinuities. Preliminary results achieved with this method are presented. It is concluded that special effects should be coordinated by the active array antenna industry toward standardization of MMIC packaging and characterization

Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC

In this paper we demonstrate a THz microstrip stack antenna on GaN-on-low resistivity silicon substrates (ρ < 40 Ω.cm). To reduce losses caused by the substrate and to enhance performance of the integrated antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold in addition to a layer of benzocyclobutene (BCB). A second circular patch is elevated in air using gold posts, making this design a stack configuration. The demonstrated antenna shows a measured resonance frequency in agreement with the modeling at 0.27 THz and a measured S11 as low as −18 dB was obtained. A directivity, gain and radiation efficiency of 8.3 dB, 3.4 dB, and 32% respectively was exhibited from the 3D EM model. To the authors' knowledge, this is the first demonstrated THz integrated microstrip stack antenna for TMIC (THz Monolithic Integrated Circuits) technology; the developed technology is suitable for high performance III-V material on low resistivity/high dielectric substrates

Packages for Terahertz Electronics

In the last couple of decades, solid-state device technologies, particularly electronic semiconductor devices, have been greatly advanced and investigated for possible adoption in various terahertz (THz) applications, such as imaging, security, and wireless communications. In tandem with these investigations, researchers have been exploring ways to package those THz electronic devices and integrated circuits for practical use. Packages are fundamentally expected to provide a physical housing for devices and integrated circuits (ICs) and reliable signal interconnections from the inside to the outside or vice versa. However, as frequency increases, we face several challenges associated with signal loss, dimensions, and fabrication. This paper provides a broad overview of recent progress in interconnections and packaging technologies dealing with these issues for THz electronics. In particular, emerging concepts based on commercial ceramic technologies, micromachining, and 3-D printing technologies for compact and lightweight packaging in practical applications are highlighted, along with metallic split blocks with rectangular waveguides, which are still considered the most valid and reliable approach.119Ysciescopu

Quartz/fused silica chip carriers

The primary objective of this research and development effort was to develop monolithic microwave integrated circuit (MMIC) packaging which will operate efficiently at millimeter-wave frequencies. The packages incorporated fused silica as the substrate material which was selected due to its favorable electrical properties and potential performance improvement over more conventional materials for Ka-band operation. The first step towards meeting this objective is to develop a package that meets standard mechanical and thermal requirements using fused silica and to be compatible with semiconductor devices operating up to at least 44 GHz. The second step is to modify the package design and add multilayer and multicavity capacity to allow for application specific integrated circuits (ASIC's) to control multiple phase shifters. The final step is to adapt the package design to a phased array module with integral radiating elements. The first task was a continuation of the SBIR Phase 1 work. Phase 1 identified fused silica as a viable substrate material by demonstrating various plating, machining, and adhesion properties. In Phase 2 Task 1, a package was designed and fabricated to validate these findings. Task 2 was to take the next step in packaging and fabricate a multilayer, multichip module (MCM). This package is the predecessor to the phased array module and demonstrates the ability to via fill, circuit print, laminate, and to form vertical interconnects. The final task was to build a phased array module. The radiating elements were to be incorporated into the package instead of connecting to it with wire or ribbon bonds

Additively Manufactured RF Components, Packaging, Modules, and Flexible Modular Phased Arrays Enabling Widespread Massively Scalable mmWave/5G Applications

The 5G era is here and with it comes many challenges, particularily facing the high frequency mmWave adoption. This is because of the cost to implement such dense networks is much greater due to the high propagation losses of signals that range from 26 GHz to 40 GHz. Therefore there needs to be a way to utilize a method of fabrication that can change with the various environments that 5G will be deployed in, be it dense urban areas or suburban sprawl. In this research, the focus is on making these RF components utilized for 5G at low cost and modular with a focus on additive manufacturing. Since additive manufacturing is a rapid prototyping technique, the technology can be quickly adjusted and altered to meet certain specifications with negligible overhead. Several areas of research will be explored. Firstly, various RF passive components such as additively manufactured antennas and couplers with a combination hybrid inkjet and 3D printing will be discussed. Passive components are critical for evaluating the process of additive manufacturing for high frequency operation. Secondly, various structures will be evaluated specifically for packaging mmWave ICs, including interconnects, smart packaging and encapsulants for use in single or multichip modules. Thirdly, various antenna fabrication techniques will be explored which enables fully integrated ICs with antennas, called System on Antenna (SoA) which utilizes both inkjet and 3D printing to combine antennas and ICs into modules. These modules, can then be built into arrays in a modular fashion, allowing for large or smaller arrays to be assembled on the fly. Finally, a method of calibrating the arrays is introduced, utilizing inkjet printed sensors. This allows the sensor to actively detect bends and deformations in the array and restore optimal antenna array performance. Built for flexible phased arrays, the sensor is designed for implementation for ubiquitous use, meaning that its can be placed on any surface, which enables widespread use of 5G technologies.Ph.D

Freeform terahertz structures fabricated by multi-photon lithography and metal coating

Direct-write multi-photon laser lithography (MPL) combines highest resolution on the nanoscale with essentially unlimited 3D design freedom. Over the previous years, the groundbreaking potential of this technique has been demonstrated in various application fields, including micromechanics, material sciences, microfluidics, life sciences as well as photonics, where in-situ printed optical coupling elements offer new perspectives for package-level system integration. However, millimeter-wave (mmW) and terahertz (THz) devices could not yet leverage the unique strengths of MPL, even though the underlying devices and structures could also greatly benefit from 3D freeform microfabrication. One of the key challenges in this context is the fact that functional mmW and THz structures require materials with high electrical conductivity and low dielectric losses, which are not amenable to structuring by multi-photon polymerization. In this work, we introduce and experimentally demonstrate a novel approach that allows to leverage MPL for fabricating high-performance mmW and THz structures with hitherto unachieved functionalities. Our concept exploits in-situ printed polymer templates that are selectively coated through highly directive metal deposition techniques in combination with precisely aligned 3D-printed shadowing structures. The resulting metal-coated freeform structures offer high surface quality in combination with low dielectric losses and conductivities comparable to bulk material values, while lending themselves to fabrication on planar mmW/THz circuits. We experimentally show the viability of our concept by demonstrating a series of functional THz structures such as THz interconnects, probe tips, and suspended antennas. We believe that our approach offers disruptive potential in the field of mmW and THz technology and may unlock an entirely new realm of laser-based 3D manufacturing

Design of a simple transition from microstrip to ridge gap waveguide suited for MMIC and antenna integration

This letter describes a simple and low-loss microstrip-to-ridge gap waveguide transition with a very compact geometry. The transition transforms the electromagnetic (EM) fields from the microstrip mode to the air-filled ridge gap waveguide mode. This is achievable if the height of the air gap in the ridge gap waveguide is kept almost equal to the thickness of the substrate of the microstrip line. The transition has a pressure contact between the ridge and the microstrip line, so it works without soldering. This is advantageous in systems that require mechanically separable split-blocks or modules and need a lot of transitions. Experimental results of the manufactured back-to-back transition show an insertion loss of 0.32 dB and a return loss of 14.15 dB over 55% relative bandwidth in Ka-band

Design of 300 ghz combined doubler/subharmonic mixer based on schottky diodes with integrated mmic based local oscillator

In this paper the design and experimental characterization of a combined doublersubharmonic mixer based on Schottky diodes which uses a 75 GHz MMIC based local oscillator is presented. This solution integrates in the same substrate the doubler and the mixer, which share the same metallic packaging with the local oscillator. The prototype has been fabricated and measured. For characterization, the Y-Factor technique has been used and the prototype yields a best conversion loss and equivalent noise temperature of 11 dB and 1976 K, respectively, at 305 GHz. This performance is close to the state of the art, and shows the potential of this approach, which allows a significant reduction in terms of size and volume.This research was funded by the Spanish MINECO, Project No. TEC2016-76997-C3-1-R, and by the Spanish State Research Agency, Project No. PID2019-109984RB-C43/AEI/10.13039/501100011033

Module, Filter, And Antenna Technology For Millimeter Waves Multi-gigabits Wireless Systems

A method of fabricating an ultra-high frequency module is disclosed. The method includes providing a top layer; drilling the top layer; milling the top layer; providing a bottom; milling the bottom layer to define a bottom layer cavity; aligning the top layer and the bottom layer; and adhering the top layer to the bottom layer. The present invention also includes an ultra-high frequency module operating at ultra-high speeds having a top layer, the top layer defining a top layer cavity; a bottom layer, the bottom layer defining a bottom layer cavity; and an adhesive adhering both the top layer to the bottom layer, wherein the top layer and the bottom layer are formed from a large area panel of a printed circuit board.Georgia Tech Research Corporatio