Design of a 2.4 GHz High-Performance Up-Conversion Mixer with Current Mirror Topology

In this paper, a low voltage low power up-conversion mixer, designed in a Chartered 0.18 μm RFCMOS technology, is proposed to realize the transmitter front-end in the frequency band of 2.4 GHz. The up-conversion mixer uses the current mirror topology and current-bleeding technique in both the driver and switching stages with a simple degeneration resistor. The proposed mixer converts an input of 100 MHz intermediate frequency (IF) signal to an output of 2.4 GHz radio frequency (RF) signal, with a local oscillator (LO) power of 2 dBm at 2.3 GHz. A comparison with conventional CMOS up-conversion mixer shows that this mixer has advantages of low voltage, low power consumption and high-performance. The post-layout simulation results demonstrate that at 2.4 GHz, the circuit has a conversion gain of 7.1 dB, an input-referred third-order intercept point (IIP3) of 7.3 dBm and a noise figure of 11.9 dB, while drawing only 3.8 mA for the mixer core under a supply voltage of 1.2 V. The chip area including testing pads is only 0.62×0.65 mm2

A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

© 2017 Elsevier Ltd. All rights reserved.A 0.1–5.0 GHz flexible software-defined radio (SDR) receiver with digitally assisted calibration is presented, employing a zero-IF/low-IF reconfigurable architecture for both wideband and narrowband applications. The receiver composes of a main-path based on a current-mode mixer for low noise, a high linearity sub-path based on a voltage-mode passive mixer for out-of-band rejection, and a harmonic rejection (HR) path with vector gain calibration. A dual feedback LNA with “8” shape nested inductor structure, a cascode inverter-based TCA with miller feedback compensation, and a class-AB full differential Op-Amp with Miller feed-forward compensation and QFG technique are proposed. Digitally assisted calibration methods for HR, IIP2 and image rejection (IR) are presented to maintain high performance over PVT variations. The presented receiver is implemented in 65 nm CMOS with 5.4 mm2 core area, consuming 9.6–47.4 mA current under 1.2 V supply. The receiver main path is measured with +5 dB m/+5dBm IB-IIP3/OB-IIP3 and +61dBm IIP2. The sub-path achieves +10 dB m/+18dBm IB-IIP3/OB-IIP3 and +62dBm IIP2, as well as 10 dB RF filtering rejection at 10 MHz offset. The HR-path reaches +13 dB m/+14dBm IB-IIP3/OB-IIP3 and 62/66 dB 3rd/5th-order harmonic rejection with 30–40 dB improvement by the calibration. The measured sensitivity satisfies the requirements of DVB-H, LTE, 802.11 g, and ZigBee.Peer reviewedFinal Accepted Versio

A 0.8 V T Network-Based 2.6 GHz Downconverter RFIC

A 2.6 GHz downconverter RFIC is designed and implemented using a 0.18 μm CMOS standard process. An important goal of the design is to achieve the high linearity that is required in WiMAX systems with a low supply voltage. A passive T phase-shift network is used as an RF input stage in a Gilbert cell to reduce supply voltage. A single supply voltage of 0.8 V is used with a power consumption of 5.87 mW. The T network-based downconverter achieves a conversion gain (CG) of 5 dB, a single-sideband noise figure (NF) of 16.16 dB, an RF-to-IF isolation of greater than 20 dB, and an input-referred third-order intercept point (IIP3) of 1 dBm when the LO power of -13 dBm is applied

High Dynamic Range RF Front End with Noise Cancellation and Linearization for WiMAX Receivers

This research deals with verification of the high dynamic range for a heterodyne radio frequency (RF) front end. A 2.6 GHz RF front end is designed and implemented in a hybrid microwave integrated circuit (HMIC) for worldwide interoperability for microwave access (WiMAX) receivers. The heterodyne RF front end consists of a low-noise amplifier (LNA) with noise cancellation, an RF bandpass filter (BPF), a downconverter with linearization, and an intermediate frequency (IF) BPF. A noise canceling technique used in the low-noise amplifier eliminates a thermal noise and then reduces the noise figure (NF) of the RF front end by 0.9 dB. Use of a downconverter with diode linearizer also compensates for gain compression, which increases the input-referred third-order intercept point (IIP3) of the RF front end by 4.3 dB. The proposed method substantially increases the spurious-free dynamic range (DRf) of the RF front end by 3.5 dB

Discrete-Time Mixing Receiver Architecture for RF-Sampling Software-Defined Radio

A discrete-time (DT) mixing architecture for RF-sampling receivers is presented. This architecture makes RF sampling more suitable for software-defined radio (SDR) as it achieves wideband quadrature demodulation and wideband harmonic rejection. The paper consists of two parts. In the first part, different downconversion techniques are classified and compared, leading to the definition of a DT mixing concept. The suitability of CT-mixing and RF-sampling receivers to SDR is also discussed. In the second part, we elaborate the DT-mixing architecture, which can be realized by de-multiplexing. Simulation shows a wideband 90° phase shift between I and Q outputs without systematic channel bandwidth limitation. Oversampling and harmonic rejection relaxes RF pre-filtering and reduces noise and interference folding. A proof-of-concept DT-mixing downconverter has been built in 65 nm CMOS, for 0.2 to 0.9 GHz RF band employing 8-times oversampling. It can reject 2nd to 6th harmonics by 40 dB typically and without systematic channel bandwidth limitation. Without an LNA, it achieves a gain of -0.5 to 2.5 dB, a DSB noise figure of 18 to 20 dB, an IIP3 = +10 dBm, and an IIP2 = +53 dBm, while consuming less than 19 mW including multiphase clock generation

A 300-800MHz Tunable Filter and Linearized LNA applied in a Low-Noise Harmonic-Rejection RF-Sampling Receiver

A multiband flexible RF-sampling receiver aimed at software-defined radio is presented. The wideband RF sampling function is enabled by a recently proposed discrete-time mixing downconverter. This work exploits a voltage-sensing LNA preceded by a tunable LC pre-filter with one external coil to demonstrate an RF-sampling receiver with low noise figure (NF) and high harmonic rejection (HR). The second-order LC filter provides voltage pre-gain and attenuates the source noise aliasing, and it also improves the HR ratio of the sampling downconverter. The LNA consists of a simple amplifier topology built from inverters and resistors to improve the third-order nonlinearity via an enhanced voltage mirror technique. The RF-sampling receiver employs 8 times oversampling covering 300 to 800 MHz in two RF sub-bands. The chip is realized in 65 nm CMOS and the measured gain across the band is between 22 and 28 dB, while achieving a NF between 0.8 to 4.3 dB. The IIP2 varies between +38 and +49 dBm and the IIP3 between -14 dBm and -9 dBm, and the third and fifth order HR ratios are more than 60 dB. The LNA and downconverter consumes 6 mW, and the clock generator takes 12 mW at 800 MHz RF.\ud \u

The BLIXER, a Wideband Balun-LNA-I/Q-Mixer Topology

This paper proposes to merge an I/Q current-commutating mixer with a noise-canceling balun-LNA. To realize a high bandwidth, the real part of the impedance of all RF nodes is kept low, and the voltage gain is not created at RF but in baseband where capacitive loading is no problem. Thus a high RF bandwidth is achieved without using inductors for bandwidth extension. By using an I/Q mixer with 25% duty-cycle LO waveform the output IF currents have also 25% duty-cycle, causing 2 times smaller DC-voltage drop after IF filtering. This allows for a 2 times increase in the impedance level of the IF filter, rendering more voltage gain for the same supply headroom. The implemented balun-LNA-I/Q-mixer topology achieves > 18 dB conversion gain, a flat noise figure < 5.5 dB from 500 MHz to 7 GHz, IIP2 = +20 dBm and IIP3 = -3 dBm. The core circuit consumes only 16 mW from a 1.2 V supply voltage and occupies less than 0.01 mm2 in 65 nm CMOS

Low-power CMOS front-ends for wireless personal area networks

The potential of implementing subthreshold radio frequency circuits in deep sub-micron CMOS technology was investigated for developing low-power front-ends for wireless personal area network (WPAN) applications. It was found that the higher transconductance to bias current ratio in weak inversion could be exploited in developing low-power wireless front-ends, if circuit techniques are employed to mitigate the higher device noise in subthreshold region. The first fully integrated subthreshold low noise amplifier was demonstrated in the GHz frequency range requiring only 260 μW of power consumption. Novel subthreshold variable gain stages and down-conversion mixers were developed. A 2.4 GHz receiver, consuming 540 μW of power, was implemented using a new subthreshold mixer by replacing the conventional active low noise amplifier by a series-resonant passive network that provides both input matching and voltage amplification. The first fully monolithic subthreshold CMOS receiver was also implemented with integrated subthreshold quadrature LO (Local Oscillator) chain for 2.4 GHz WPAN applications. Subthreshold operation, passive voltage amplification, and various low-power circuit techniques such as current reuse, stacking, and differential cross coupling were combined to lower the total power consumption to 2.6 mW. Extremely compact resistive feedback CMOS low noise amplifiers were presented as a cost-effective alternative to narrow band LNAs using high-Q inductors. Techniques to improve linearity and reduce power consumption were presented. The combination of high linearity, low noise figure, high broadband gain, extremely small die area and low power consumption made the proposed LNA architecture a compelling choice for many wireless applications.Ph.D.Committee Chair: Laskar, Joy; Committee Member: Chakraborty, Sudipto; Committee Member: Chang, Jae Joon; Committee Member: Divan, Deepakraj; Committee Member: Kornegay, Kevin; Committee Member: Tentzeris, Emmanoui

Equalization of Third-Order Intermodulation Products in Wideband Direct Conversion Receivers

This paper reports a SAW-less direct-conversion receiver which utilizes a mixed-signal feedforward path to regenerate and adaptively cancel IM3 products, thus accomplishing system-level linearization. The receiver system performance is dominated by a custom integrated RF front end implemented in 130-nm CMOS and achieves an uncorrected out-of-band IIP3 of -7.1 dBm under the worst-case UMTS FDD Region 1 blocking specifications. Under IM3 equalization, the receiver achieves an effective IIP3 of +5.3 dBm and meets the UMTS BER sensitivity requirement with 3.7 dB of margin

Saw-Less radio receivers in CMOS

Smartphones play an essential role in our daily life. Connected to the internet, we can easily keep in touch with family and friends, even if far away, while ever more apps serve us in numerous ways. To support all of this, higher data rates are needed for ever more wireless users, leading to a very crowded radio frequency spectrum. To achieve high spectrum efficiency while reducing unwanted interference, high-quality band-pass filters are needed. Piezo-electrical Surface Acoustic Wave (SAW) filters are conventionally used for this purpose, but such filters need a dedicated design for each new band, are relatively bulky and also costly compared to integrated circuit chips. Instead, we would like to integrate the filters as part of the entire wireless transceiver with digital smartphone hardware on CMOS chips. The research described in this thesis targets this goal. It has recently been shown that N-path filters based on passive switched-RC circuits can realize high-quality band-select filters on CMOS chips, where the center frequency of the filter is widely tunable by the switching-frequency. As CMOS downscaling following Moore’s law brings us lower clock-switching power, lower switch on-resistance and more compact metal-to-metal capacitors, N-path filters look promising. This thesis targets SAW-less wireless receiver design, exploiting N-path filters. As SAW-filters are extremely linear and selective, it is very challenging to approximate this performance with CMOS N-path filters. The research in this thesis proposes and explores several techniques for extending the linearity and enhancing the selectivity of N-path switched-RC filters and mixers, and explores their application in CMOS receiver chip designs. First the state-of-the-art in N-path filters and mixer-first receivers is reviewed. The requirements on the main receiver path are examined in case SAW-filters are removed or replaced by wideband circulators. The feasibility of a SAW-less Frequency Division Duplex (FDD) radio receiver is explored, targeting extreme linearity and compression Irequirements. A bottom-plate mixing technique with switch sharing is proposed. It improves linearity by keeping both the gate-source and gate-drain voltage swing of the MOSFET-switches rather constant, while halving the switch resistance to reduce voltage swings. A new N-path switch-RC filter stage with floating capacitors and bottom-plate mixer-switches is proposed to achieve very high linearity and a second-order voltage-domain RF-bandpass filter around the LO frequency. Extra out-of-band (OOB) rejection is implemented combined with V-I conversion and zero-IF frequency down-conversion in a second cross-coupled switch-RC N-path stage. It offers a low-ohmic high-linearity current path for out-of-band interferers. A prototype chip fabricated in a 28 nm CMOS technology achieves an in-band IIP3 of +10 dBm , IIP2 of +42 dBm, out-of-band IIP3 of +44 dBm, IIP2 of +90 dBm and blocker 1-dB gain-compression point of +13 dBm for a blocker frequency offset of 80 MHz. At this offset frequency, the measured desensitization is only 0.6 dB for a 0-dBm blocker, and 3.5 dB for a 10-dBm blocker at 0.7 GHz operating frequency (i.e. 6 and 9 dB blocker noise figure). The chip consumes 38-96 mW for operating frequencies of 0.1-2 GHz and occupies an active area of 0.49 mm2. Next, targeting to cover all frequency bands up to 6 GHz and achieving a noise figure lower than 3 dB, a mixer-first receiver with enhanced selectivity and high dynamic range is proposed. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off than the conventional up-converted real pole and reduced distortion. This thesis explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45 nm Partially Depleted Silicon on Insulator (PDSOI) technology achieves high linearity (in-band IIP3 of +3 dBm, IIP2 of +56 dBm, out-of-band IIP3 = +39 dBm, IIP2 = +88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz operating frequency. IIFinally, to demonstrate the performance of the implemented blocker-tolerant receiver chip designs, a test setup with a real mobile phone is built to verify the sensitivity of the receiver chip for different practical blocking scenarios