Saw-Less radio receivers in CMOS

Smartphones play an essential role in our daily life. Connected to the internet, we can easily keep in touch with family and friends, even if far away, while ever more apps serve us in numerous ways. To support all of this, higher data rates are needed for ever more wireless users, leading to a very crowded radio frequency spectrum. To achieve high spectrum efficiency while reducing unwanted interference, high-quality band-pass filters are needed. Piezo-electrical Surface Acoustic Wave (SAW) filters are conventionally used for this purpose, but such filters need a dedicated design for each new band, are relatively bulky and also costly compared to integrated circuit chips. Instead, we would like to integrate the filters as part of the entire wireless transceiver with digital smartphone hardware on CMOS chips. The research described in this thesis targets this goal. It has recently been shown that N-path filters based on passive switched-RC circuits can realize high-quality band-select filters on CMOS chips, where the center frequency of the filter is widely tunable by the switching-frequency. As CMOS downscaling following Moore’s law brings us lower clock-switching power, lower switch on-resistance and more compact metal-to-metal capacitors, N-path filters look promising. This thesis targets SAW-less wireless receiver design, exploiting N-path filters. As SAW-filters are extremely linear and selective, it is very challenging to approximate this performance with CMOS N-path filters. The research in this thesis proposes and explores several techniques for extending the linearity and enhancing the selectivity of N-path switched-RC filters and mixers, and explores their application in CMOS receiver chip designs. First the state-of-the-art in N-path filters and mixer-first receivers is reviewed. The requirements on the main receiver path are examined in case SAW-filters are removed or replaced by wideband circulators. The feasibility of a SAW-less Frequency Division Duplex (FDD) radio receiver is explored, targeting extreme linearity and compression Irequirements. A bottom-plate mixing technique with switch sharing is proposed. It improves linearity by keeping both the gate-source and gate-drain voltage swing of the MOSFET-switches rather constant, while halving the switch resistance to reduce voltage swings. A new N-path switch-RC filter stage with floating capacitors and bottom-plate mixer-switches is proposed to achieve very high linearity and a second-order voltage-domain RF-bandpass filter around the LO frequency. Extra out-of-band (OOB) rejection is implemented combined with V-I conversion and zero-IF frequency down-conversion in a second cross-coupled switch-RC N-path stage. It offers a low-ohmic high-linearity current path for out-of-band interferers. A prototype chip fabricated in a 28 nm CMOS technology achieves an in-band IIP3 of +10 dBm , IIP2 of +42 dBm, out-of-band IIP3 of +44 dBm, IIP2 of +90 dBm and blocker 1-dB gain-compression point of +13 dBm for a blocker frequency offset of 80 MHz. At this offset frequency, the measured desensitization is only 0.6 dB for a 0-dBm blocker, and 3.5 dB for a 10-dBm blocker at 0.7 GHz operating frequency (i.e. 6 and 9 dB blocker noise figure). The chip consumes 38-96 mW for operating frequencies of 0.1-2 GHz and occupies an active area of 0.49 mm2. Next, targeting to cover all frequency bands up to 6 GHz and achieving a noise figure lower than 3 dB, a mixer-first receiver with enhanced selectivity and high dynamic range is proposed. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off than the conventional up-converted real pole and reduced distortion. This thesis explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45 nm Partially Depleted Silicon on Insulator (PDSOI) technology achieves high linearity (in-band IIP3 of +3 dBm, IIP2 of +56 dBm, out-of-band IIP3 = +39 dBm, IIP2 = +88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz operating frequency. IIFinally, to demonstrate the performance of the implemented blocker-tolerant receiver chip designs, a test setup with a real mobile phone is built to verify the sensitivity of the receiver chip for different practical blocking scenarios

Energy Efficient Wireless Circuits for IoT in CMOS Technology

The demand for efficient and reliable wireless communication equipment is increasing at a rapid pace. The demand and need vary between different technologies including 5G and IoT. The Radio Frequency Integrated Circuits (RFIC) designers face challenges to achieve higher performance with lower power resources. Although advances in Complementary Metal-Oxide-Semiconductor (CMOS) technology has help designers, challenges still exist. Thus, novel and new ideas are welcome in RFIC design. In this dissertation, many ideas are introduced to improve efficiency and linearity for wireless receivers dedicated to IoT applications. A low-power wireless RF receiver for wireless sensor networks (WSN) is introduced. The receiver has improved linearity with incorporated current-mode circuits and high-selectivity filtering. The receiver operates at a 900 MHz industrial, scientific and medical (ISM) band and is implemented in 130 nm CMOS technology. The receiver has a frequency multiplication mixer, which uses a 300 MHz clock from a local oscillator (LO). The local oscillator is implemented using vertical delay cells to reduce power consumption. The receiver conversion gain is 40 dB and the receiver noise figure (NF) is 14 dB. The receiver IIP3 is −6 dBm and the total power consumption is 1.16 mW. A wireless RF receiver system suitable for Internet-of-Things (IoT) applications is presented. The system can simultaneously harvest energy from out-of-band (OB) blockers with normal receiver operation; thus, the battery life for IoT applications can be extended. The system has only a single antenna for simultaneous RF energy harvesting and wireless reception. The receiver is a mixer-first quadrature receiver designed to tolerate large unavoidable blockers. The system is implemented in 180 nm CMOS technology and operates at 900 MHz industrial, scientific and medical (ISM) band. The receiver gain is 41.5 dB. Operating from a 1 V supply, the receiver core consumes 430 µW. This power can be reduced to 220 µW in the presence of a large blocker (≈ 0 dBm) by the power provided by the blocker RF energy harvesting where the power conversion efficiency (PCE) is 30%. Finally, a highly linear energy efficient wireless receiver is introduced. The receiver architecture is a mixer-first receiver with a Voltage Controlled Oscillator (VCO) based amplifier incorporated as baseband amplifier. The receiver benefits from the high linearity of this amplifier. Moreover, novel clock recycling techniques are applied to make use of the amplifier’s VCOs to clock the mixer circuit and to improve power consumption. The system is implemented in 130 nm CMOS technology and operates at 900 MHz ISM band. The receiver conversion gain is 42 dB and the power consumption is 2.9 mW. The out-of-band IIP3 is 6 dBm. All presented systems and circuits in this dissertation are validated and published in various IEEE journals and conferences

Scalable Array Transceivers with Wide Frequency Tuning Range for Next Generation Radios

Scalable array transceivers with wide frequency tuning range are attractive for next-generationradios. Key challenges for such radios include generation of LO signals with widefrequency tuning range, scalable synchronization between multiple array unit cells andtolerance to in-band and out-of-band interferers. This thesis presents approaches toaddress these challenges in commercial CMOS technologies.The first part focuses on a series resonant mode-switching VCO architecture thatachieves both state-of-art area and power efficiency with an octave frequency tuningrange from 6.4-14 GHz achieved 186-dB-188-dB Figure-of-Merit (FoM) in 65 nm CMOStechnology. The scalability of this approach towards achieving even larger FTR is alsodemonstrated by a triple-mode 2.2 GHz to 8.7 GHz (119% FTR) CMOS VCO.In the second part a scalable, single-wire coupled-PLL architecture for RF mm-wavearrays is presented. The proposed architecture preserves the simplicity of a daisy-chained LO distribution, compensates for phase offset due to interconnect, and provides phasenoise improvement commensurate to the number of coupled PLLs. Measurements on a28 GHz CMOS prototype demonstrate the feasibility of this scheme.The third part of this thesis presents filtering techniques for in-band blocker suppression.A spatial spectral notch filter design for MIMO digital beam forming arrays is proposedto relax the ADC dynamic range requirement. Orthogonal properties of Walsh functionsincorporated into passive N-path approach enables reconfigurable notches at multiplefrequencies and angles-of-incidence. A 0.3 GHz-1.4 GHz four-element array prototypeimplemented in 65 nm CMOS achieves > 15-dB notch filtering at RF input for twoblockers while causing < 3-dB NF degradation.Finally, a code-domain N-path receiver (RX) is proposed based on pseudo-random(PN) code-modulated LO pulses for simultaneous transmission and reception (STAR)applications. A combination of Walsh-Function and PN sequence is proposed to createcode-domain matched filter at the RF frontend which reflects unknown in-band blockersand rejects known in-band TX self-interference (SI) by using orthogonal codes at RXinput thereby maximizing the SNR of the received signals. The resulting prototype in65 nm is functional from 0.3 GHz-1.4 GHz with 35 dB gain and concurrently receivestwo code-modulated signals. Proposed transmitter (TX) SI mitigation approach resultsin 38.5 dB rejection for -11.8 dBm 1.46 Mb s QPSK modulated SI at RX input. TheRX achieves 23.7 dBm OP1dB for in-band SI, while consuming ∼35 mW and occupies0.31 mm2Keywords: Passive Mixers, dual band, TX self-Interferer, synchronisation, STAR, Code domain N-path receiver, mode switching, notch filter, Phase locked loops, Octave tuning range, CMOS, phase noise, VCO, large-scale 5G mm-wave arrays, resonator, Simultaneous transmit and receive, resonator band-switching, LO distribution, scalable coupled-PLL, N-path passive mixers, MIMO arrays, digital beamforming, CDMA, phased arrays, wide tuning range, Walsh Functio

Design of Power-Efficient Optical Transceivers and Design of High-Linearity Wireless Wideband Receivers

The combination of silicon photonics and advanced heterogeneous integration is promising for next-generation disaggregated data centers that demand large scale, high throughput, and low power. In this dissertation, we discuss the design and theory of power-efficient optical transceivers with System-in-Package (SiP) 2.5D integration. Combining prior arts and proposed circuit techniques, a receiver chip and a transmitter chip including two 10 Gb/s data channels and one 2.5 GHz clocking channel are designed and implemented in 28 nm CMOS technology. An innovative transimpedance amplifier (TIA) and a single-ended to differential (S2D) converter are proposed and analyzed for a low-voltage high-sensitivity receiver; a four-to-one serializer, programmable output drivers, AC coupling units, and custom pads are implemented in a low-power transmitter; an improved quadrature locked loop (QLL) is employed to generate accurate quadrature clocks. In addition, we present an analysis for inverter-based shunt-feedback TIA to explicitly depict the trade-off among sensitivity, data rate, and power consumption. At last, the research on CDR-based​ clocking schemes for optical links is also discussed. We introduce prior arts and propose a power-efficient clocking scheme based on an injection-locked phase rotator. Next, we analyze injection-locked ring oscillators (ILROs) that have been widely used for quadrature clock generators (QCGs) in multi-lane optical or wireline transceivers due to their low power, low area, and technology scalability. The asymmetrical or partial injection locking from 2 phases to 4 phases results in imbalances in amplitude and phase. We propose a modified frequency-domain analysis to provide intuitive insight into the performance design trade-offs. The analysis is validated by comparing analytical predictions with simulations for an ILRO-based QCG in 28 nm CMOS technology. This dissertation also discusses the design of high-linearity wireless wideband receivers. An out-of-band (OB) IM3 cancellation technique is proposed and analyzed. By exploiting a baseband auxiliary path (AP) with a high-pass feature, the in-band (IB) desired signal and out-of-band interferers are split. OB third-order intermodulation products (IM3) are reconstructed in the AP and cancelled in the baseband (BB). A 0.5-2.5 GHz frequency-translational noise-cancelling (FTNC) receiver is implemented in 65nm CMOS to demonstrate the proposed approach. It consumes 36 mW without cancellation at 1 GHz LO frequency and 1.2 V supply, and it achieves 8.8 MHz baseband bandwidth, 40dB gain, 3.3dB NF, 5dBm OB IIP3, and −6.5dBm OB B1dB. After IM3 cancellation, the effective OB-IIP3 increases to 32.5 dBm with an extra 34 mW for narrow-band interferers (two tones). For wideband interferers, 18.8 dB cancellation is demonstrated over 10 MHz with two −15 dBm modulated interferers. The local oscillator (LO) leakage is −92 dBm and −88 dB at 1 GHz and 2 GHz LO respectively. In summary, this technique achieves both high OB linearity and good LO isolation