Scalable Array Transceivers with Wide Frequency Tuning Range for Next Generation Radios

Scalable array transceivers with wide frequency tuning range are attractive for next-generationradios. Key challenges for such radios include generation of LO signals with widefrequency tuning range, scalable synchronization between multiple array unit cells andtolerance to in-band and out-of-band interferers. This thesis presents approaches toaddress these challenges in commercial CMOS technologies.The first part focuses on a series resonant mode-switching VCO architecture thatachieves both state-of-art area and power efficiency with an octave frequency tuningrange from 6.4-14 GHz achieved 186-dB-188-dB Figure-of-Merit (FoM) in 65 nm CMOStechnology. The scalability of this approach towards achieving even larger FTR is alsodemonstrated by a triple-mode 2.2 GHz to 8.7 GHz (119% FTR) CMOS VCO.In the second part a scalable, single-wire coupled-PLL architecture for RF mm-wavearrays is presented. The proposed architecture preserves the simplicity of a daisy-chained LO distribution, compensates for phase offset due to interconnect, and provides phasenoise improvement commensurate to the number of coupled PLLs. Measurements on a28 GHz CMOS prototype demonstrate the feasibility of this scheme.The third part of this thesis presents filtering techniques for in-band blocker suppression.A spatial spectral notch filter design for MIMO digital beam forming arrays is proposedto relax the ADC dynamic range requirement. Orthogonal properties of Walsh functionsincorporated into passive N-path approach enables reconfigurable notches at multiplefrequencies and angles-of-incidence. A 0.3 GHz-1.4 GHz four-element array prototypeimplemented in 65 nm CMOS achieves > 15-dB notch filtering at RF input for twoblockers while causing < 3-dB NF degradation.Finally, a code-domain N-path receiver (RX) is proposed based on pseudo-random(PN) code-modulated LO pulses for simultaneous transmission and reception (STAR)applications. A combination of Walsh-Function and PN sequence is proposed to createcode-domain matched filter at the RF frontend which reflects unknown in-band blockersand rejects known in-band TX self-interference (SI) by using orthogonal codes at RXinput thereby maximizing the SNR of the received signals. The resulting prototype in65 nm is functional from 0.3 GHz-1.4 GHz with 35 dB gain and concurrently receivestwo code-modulated signals. Proposed transmitter (TX) SI mitigation approach resultsin 38.5 dB rejection for -11.8 dBm 1.46 Mb s QPSK modulated SI at RX input. TheRX achieves 23.7 dBm OP1dB for in-band SI, while consuming ∼35 mW and occupies0.31 mm2Keywords: Passive Mixers, dual band, TX self-Interferer, synchronisation, STAR, Code domain N-path receiver, mode switching, notch filter, Phase locked loops, Octave tuning range, CMOS, phase noise, VCO, large-scale 5G mm-wave arrays, resonator, Simultaneous transmit and receive, resonator band-switching, LO distribution, scalable coupled-PLL, N-path passive mixers, MIMO arrays, digital beamforming, CDMA, phased arrays, wide tuning range, Walsh Functio

Precision at Scale: System Design from Tiny Biosensors to Giant Arrays

In order to change the world, technological advancements must be made affordable and available for the general public to use. In other words, we must be able to scale our inventions effectively. Silicon integrated circuits are crucial components in scaling electronic systems because they are mass producible and offer a phenomenal cost-to-complexity ratio. This thesis summarizes the author’s work on highly scalable sensor and array systems. It presents three high precision systems, that demonstrate how the use of highly functional radio-frequency integrated circuits enables the realization of previously unfeasible architectures

Integrated Circuits and Systems for Millimeter-Wave Frequencies

In the first section of this thesis, mm-wave circuit- and system-level solutions for addition of multi-user service to conventional multi-antenna phased array architectures will be introduced. The proposed architecture will enhance the link capacity, co-channel user service and hardware cost compared to conventional solutions. Theory and design of the circuits and system are detailed and comprehensive measurement results are presented verifying the system-level functionality. First section is named A Millimeter-Wave Partially-Overlapped Beamforming-MIMO Receiver: Theory, Design, and Implementation. More specifically, this section presents an analysis and design of a partially-overlapped beamforming-MIMO architecture capable of achieving higher beamforming and spatial multiplexing gains with lower number of elements compared to conventional architectures. As a proof of concept, a 4-element beamforming-MIMO receiver (RX) covering 64-67 GHz frequency band enabling 2-stream concurrent reception is designed and measured. By partitioning the RX elements into two clusters and partially overlapping these clusters to create two 3-element beamformers, both phased-array (coherent beamforming) as well as MIMO (spatial multiplexing) features are simultaneously acquired. 6-bit phase shifters with 360° phase control and 5-bit VGAs with 11 dB range are designed to enable steering of the two RX clusters toward two arbitrary angular locations corresponding to two users. Fabricated in a 130-nm SiGe BiCMOS process, the RX achieves a 30.15 dB maximum direct conversion gain and a 9.8 dB minimum noise figure (NF) across 548 MHz IF bandwidth. S-parameter-based array factor measurements verify spatial filtering of the interference and spatial multiplexing in this RX chip.In the second section of this thesis, energy-efficient ultra-high speed transceiver architectures will be presented. Current high-speed transceivers rely on high-sampling-rate high-resolution power-hungry analog-to-digital converters or digital-to-analog converters at the interface of analog and digital circuitries. However, design of these backend data-converters are extremely power-hungry at very high speeds in a fully-integrated end-to-end scenario (i.e. RF-to-Bits, Bits-to-RF). Novel system-level architectures will be presented that obviate the need for such costly data converters and will significantly relax the complexity of digital signal-processing. The proposed architecture will result in orders of magnitude energy saving at ultra-high speeds. Theory, design, and measurement results of the highest-speed, highly energy-efficient fully-integrated end-to-end transceiver will be discussed in this section. Second section is named A Millimeter-Wave Energy-Efficient Direct-Demodulation Receiver: Theory, Design, and Implementation. More precisely, this section presents the theory, design, and implementation of an 8PSK direct-demodulation receiver based on a novel multi-phase RF-correlation concept. The output of this RF-to-bits receiver architecture is demodulated bits, obviating the need for power-hungry high-speed-resolution data converters. A single-channel 115-135-GHz receiver prototype was fabricated in a 55-nm SiGe BiCMOS process. A max conversion gain of 32 dB and a min noise figure (NF) of 10.3 dB was measured. A data-rate of 36 Gbps was wirelessly measured at 30 cm distance with the received 8PSK signal being directly demodulated on-chip at a bit-error-rate (BER) of 1e-6. The measured receiver sensitivity at this BER is -41.28 dBm. The prototype occupies 2.5 by 3.5 mm squared of die area including PADs and test circuits (2.5 mm squared active area) and consumes a total DC power of 200.25 mW

Two-Dimensional Electronic Materials and Devices: Opportunities and Challenges

The unprecedented growth of the Internet of Things (IoT) and the 4th Industrial Revolution (Industry 4.0) not only demands dimensional scaling of device technologies but also new types of applications beyond today’s electronics. Two-dimensional (2D) materials, a group of layered crystals (such as graphene and MoS2) with unique properties, have emerged as promising candidates for IoT and Industry 4.0 since they can, not only extend the scaling with unprecedented performance and energy efficiency but also exhibit high potential for novel electronic devices. However, such nanomaterials suffer from significant challenges in process integration, especially in the modules that involves the formation of interfaces between 2D materials and conventional bulk materials. Thus, realizing high-performance energy-efficient 2D electronic devices has been challenging. This dissertation focuses on understanding the fundamental issues in such 2D materials (such as contacts, interfaces and doping) and in identifying applications uniquely enabled by these materials.First, a comprehensive treatment of metal contacts to 2D semiconductors, which has been a huge hurdle for 2D electronic technologies, will be presented. As a pioneering study, new interface physics originating from the unique dimensionality and surface properties have been revealed [1]. Solutions to minimize contact resistance are described though techniques of interface hybridization [2] and seamless contacts [3], [4]. These techniques transform 2D semiconductors from solely scientifically-interesting materials into high-performance field-effect transistor (FET) technologies, such as MoS2 FETs with record-low contact resistances [5], [6] and WSe2 FETs with record-high drive current and mobility [7]. Beyond metal interfaces, dielectric interface is crucial for preserving the carrier mobility in 2D channels, for which a solution enabled by buffer layers has been proposed [8]. On the other hand, the vertical van der Waals interfaces between 2D and 3D semiconductors, which retain the advantages of pristine ultra-thin 2D films as well as maximized tunneling area/field, have been studied and exploited into a novel beyond-silicon transistor technology – the first 2D channel tunnel FET (TFET) [9], which beat the fundamental limitation in the switching behavior of transistors. Recent results from the engineering of such 2D-3D semiconductor interfaces by surface reduction/passivation are described, showing a significant boost of drive current. While conventional diffusion/ion implantation methods are infeasible for 2D materials, two efficient doping techniques that are specific for 2D materials – surface doping [10], [11] and intercalation doping [12] are presented. The theoretical study of surface doping using ab-initio methods helped develop a novel doping scheme that uniquely exploits the Lewis-base like pedigree of 2D semiconductors without disturbing the structural integrity of the 2D atomic layer configuration [13], as well as a novel electrocatalyst based on MoS2 that achieved record high hydrogen evolution reaction (HER) performance [14]. On the other hand, intercalation doping has been employed to demonstrate graphene based transparent electrodes with the best combination of transmittance and sheet resistance [12], and also the first graphene interconnects with excellent performance, reliability and energy-efficiency [15], [16]. Moreover, by uniquely exploiting the high kinetic inductance and conductivity of intercalation doped graphene, a fundamentally different on-chip inductor has been demonstrated [17], [18], with both small form-factors and high inductance values, that were once thought unachievable in tandem. This 2D technique provides an attractive solution to the longstanding scaling problem of analog/radio-frequency electronics and opens up an unconventional pathway for the development of future ultra-compact wireless communication systems. Finally, a novel dissipative quantum transport methodology based on Büttiker probes with band-to-band tunneling capability is developed for 2D FETs [19]. Subsequently, gate-induced-drain-leakage (GIDL), one of the main leakage mechanisms in FETs especially access transistors, is evaluated for the first time for 2D FETs. The results establish the advantages of certain 2D semiconductors in greatly reducing GIDL and thereby support use of such materials in future memory technologies.The dissertation concludes with a vision for how a smart life can be realized in the future by harnessing the capabilities of various 2D technologies in the era of IoT and Industry 4.0.[1] J. Kang, D. Sarkar, W. Liu, D. Jena, and K. Banerjee, “A computational study of metal-contacts to beyond-graphene 2D semiconductor materials,” in IEEE International Electron Devices Meeting, 2012, pp. 407–410.[2] J. Kang, W. Liu, D. Sarkar, D. Jena, and K. Banerjee, “Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors,” Phys. Rev. X, vol. 4, no. 3, p. 31005, Jul. 2014.[3] J. Kang, D. Sarkar, Y. Khatami, and K. Banerjee, “Proposal for all-graphene monolithic logic circuits,” Appl. Phys. Lett., vol. 103, no. 8, p. 83113, 2013.[4] A. Allain, J. Kang, K. Banerjee, and A. Kis, “Electrical contacts to two-dimensional semiconductors,” Nat. Mater., vol. 14, no. 12, pp. 1195–1205, 2015.[5] W. Liu et al., “High-performance few-layer-MoS2 field-effect-transistor with record low contact-resistance,” in IEEE International Electron Devices Meeting, 2013, pp. 499–502.[6] J. Kang, W. Liu, and K. Banerjee, “High-performance MoS2 transistors with low-resistance molybdenum contacts,” Appl. Phys. Lett., vol. 104, no. 9, p. 93106, Mar. 2014.[7] W. Liu, J. Kang, D. Sarkar, Y. Khatami, D. Jena, and K. Banerjee, “Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors.,” Nano Lett., vol. 13, no. 5, pp. 1983–90, May 2013.[8] J. Kang, W. Liu, and K. Banerjee, “Computational Study of Interfaces between 2D MoS2 and Surroundings,” in 45th IEEE Semiconductor Interface Specialists Conference, 2014.[9] D. Sarkar et al., “A subthermionic tunnel field-effect transistor with an atomically thin channel,” Nature, vol. 526, no. 7571, pp. 91–95, Sep. 2015.[10] Y. Khatami, W. Liu, J. Kang, and K. Banerjee, “Prospects of graphene electrodes in photovoltaics,” in Proceedings of SPIE, 2013, vol. 8824, p. 88240T–88240T–6.[11] D. Sarkar et al., “Functionalization of Transition Metal Dichalcogenides with Metallic Nanoparticles: Implications for Doping and Gas-Sensing,” Nano Lett., vol. 15, no. 5, pp. 2852–2862, May 2015.[12] W. Liu, J. Kang, and K. Banerjee, “Characterization of FeCl3 intercalation doped CVD few-layer graphene,” IEEE Electron Device Lett., vol. 37, no. 9, pp. 1246–1249, Sep. 2016.[13] S. Lei et al., “Surface functionalization of two-dimensional metal chalcogenides by Lewis acid–base chemistry,” Nat. Nanotechnol., vol. 11, no. 5, pp. 465–471, Feb. 2016.[14] J. Li, J. Kang, Q. Cai, W. Hong, C. Jian, and W. Liu, “Boosting Hydrogen Evolution Performance of MoS2 by Band Structure Engineering,” Adv. Mater. Interfaces, vol. 1700303, 2017.[15] J. Jiang et al., “Intercalation doped multilayer-graphene-nanoribbons for next-generation interconnects,” Nano Lett., vol. 17, no. 3, pp. 1482–1488, Mar. 2017.[16] J. Jiang, J. Kang, and K. Banerjee, “Characterization of Self - Heating and Current - Carrying Capacity of Intercalation Doped Graphene - Nanoribbon Interconnects,” in IEEE International Reliability Physics Symposium, 2017, p. 6B.1.1-6B.1.6.[17] X. Li et al., “Graphene inductors for high-frequency applications - design, fabrication, characterization, and study of skin effect,” in IEEE International Electron Devices Meeting, 2014, p. 5.4.1-5.4.4.[18] J. Kang et al., under review.[19] J. Kang et al., under review