Scalable Energy-Recovery Architectures.

Energy efficiency is a critical challenge for today's integrated circuits, especially for high-end digital signal processing and communications that require both high throughput and low energy dissipation for extended battery life. Charge-recovery logic recovers and reuses charge using inductive elements and has the potential to achieve order-of-magnitude improvement in energy efficiency while maintaining high performance. However, the lack of large-scale high-speed silicon demonstrations and inductor area overheads are two major concerns. This dissertation focuses on scalable charge-recovery designs. We present a semi-automated design flow to enable the design of large-scale charge-recovery chips. We also present a new architecture that uses in-package inductors, eliminating the area overheads caused by the use of integrated inductors in high-performance charge-recovery chips. To demonstrate our semi-automated flow, which uses custom-designed standard-cell-like dynamic cells, we have designed a 576-bit charge-recovery low-density parity-check (LDPC) decoder chip. Functioning correctly at clock speeds above 1 GHz, this prototype is the first-ever demonstration of a GHz-speed charge-recovery chip of significant complexity. In terms of energy consumption, this chip improves over recent state-of-the-art LDPCs by at least 1.3 times with comparable or better area efficiency. To demonstrate our architecture for eliminating inductor overheads, we have designed a charge-recovery LDPC decoder chip with in-package inductors. This test-chip has been fabricated in a 65nm CMOS flip-chip process. A custom 6-layer FC-BGA package substrate has been designed with 16 inductors embedded in the fifth layer of the package substrate, yielding higher Q and significantly improving area efficiency and energy efficiency compared to their on-chip counterparts. From measurements, this chip achieves at least 2.3 times lower energy consumption with better area efficiency over state-of-the-art published designs.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/116653/1/terryou_1.pd

Performance-Driven Energy-Efficient VLSI.

Today, there are two prevalent platforms in VLSI systems: high-performance and ultra-low power. High-speed designs, usually operating at GHz level, provide the required computation abilities to systems but also consume a large amount of power; microprocessors and signal processing units are examples of this type of designs. For ultra-low power designs, voltage scaling methods are usually used to reduce power consumption and extend battery life. However, circuit delay in ultra-low power designs increases exponentially, as voltage is scaled below Vth, and subthreshold leakage energy also increases in a near-exponential fashion. Many methods have been proposed to address key design challenges on these two platforms, energy consumption in high-performance designs, and performance/reliability in ultra-low power designs. In this thesis, charge-recovery design is explored as a solution targeting both platforms to achieve increased energy efficiency over conventional CMOS designs without compromising performance or reliability. To improve performance while still achieving high energy efficiency for ultra-low power designs, we propose Subthreshold Boost Logic (SBL), a new circuit family that relies on charge-recovery design techniques to achieve order-of-magnitude improvements in operating frequencies, and achieve high energy efficiency compared to conventional subthreshold designs. To demonstrate the performance and energy efficiency of SBL, we present a 14-tap 8-bit finite-impulse response (FIR) filter test-chip fabricated in a 0.13µm process. With a single 0.27V supply, the test-chip achieves its most energy efficient operating point at 20MHz, consuming 15.57pJ per cycle with a recovery rate of 89% and a FoM equal to 17.37 nW/Tap/MHz/InBit/CoeffBit. To reduce energy consumption at multi-GHz level frequencies, we explore the application of resonant-clocking to the design of a 5-bit non-interleaved resonant-clock ash ADC with a sampling rate of 7GS/s. The ADC has been designed in a 65nm bulk CMOS process. An integrated 0.77nH inductor is used to resonate the entire clock distribution network to achieve energy efficient operation. Operating at 5.5GHz, the ADC consumes 28mW, yielding 396fJ per conversion step. The clock network accounts for 10.7% of total power and consumes 54% less energy over CV^2. By comparison, in a typical ash ADC design, 30% of total power is clock-related.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/89779/1/wsma_1.pd

Оптимизация мощности и задержки наноразмерного (4х1)-мультиплексора при использовании схемы удвоителя напряжения на КМОП структурах

Полный текст доступен на сайте издания по подписке: http://radio.kpi.ua/article/view/S0021347016110017Работа поддержана университетом ITM (Гвалиор) и компанией Cadence System Design (Бангалор)В статье представлен высокоэффективный (4×1)-мультиплексор с малой утечкой и уменьшенной задержкой, снабженный схемой удвоителя напряжения на МОП-структурах, которая совмещена с расширенной МОП-конфигурацией транзисторов ждущего режима наноразмерной структуры. Оригинальная конструкция схемы удвоителя напряжения реализована в виде дополнительной схемы на выходе предложенной конструкции для ступенчатого увеличения напряжения. Это позволило удвоить выходное пиковое напряжение за счет переходных процессов положительного и отрицательного циклов. Это повышенное напряжение может использоваться в качестве стабилизированного источника питания для определенных целей. Наличие схемы удвоителя напряжения не является достаточным для улучшения общей эффективности предложенной конструкции (4×1)-мультиплексора. Для получения одновременной оптимизации по мощности рассеяния (мощность утечки) и длительности задержки схема удвоителя напряжения используется совместно с расширенной МОП-конфигурацией транзисторов ждущего режима. Для минимизации параметра мощности рассеяния, вызванной утечкой, введена схема удвоителя напряжения на МОП-структурах, совмещенная с расширенной конфигурацией транзисторов ждущего режима. Это позволило уменьшить избыточную мощность рассеяния схемы, обусловленную утечкой. Указанная дополнительная часть схемы позволяет получить необходимый уровень выходного напряжения у предложенного (4×1)-мультиплексора при улучшенных параметрах. Моделирование устройства осуществлялось при использовании технологии 45 нм. В результате мощность рассеяния, обусловленная утечкой, уменьшена до уровня примерно 55%, а характеристика задержки улучшена до требуемого уровня благодаря использованию схемы удвоителя напряжения на МОП-структурах совместно с улучшенной МОП-конфигурацией транзисторов ждущего режима. В статье представлены различные комбинации схемы удвоителя напряжения на МОП-структурах, реализованные на выходе (4×1)-мультиплексора

A Low-Power Wireless Multichannel Microsystem for Reliable Neural Recording.

This thesis reports on the development of a reliable, single-chip, multichannel wireless biotelemetry microsystem intended for extracellular neural recording from awake, mobile, and small animal models. The inherently conflicting requirements of low power and reliability are addressed in the proposed microsystem at architectural and circuit levels. Through employing the preliminary microsystems in various in-vivo experiments, the system requirements for reliable neural recording are identified and addressed at architectural level through the analytical tool: signal path co-optimization. The 2.85mm×3.84mm, mixed-signal ASIC integrates a low-noise front-end, programmable digital controller, an RF modulator, and an RF power amplifier (PA) at the ISM band of 433MHz on a single-chip; and is fabricated using a 0.5µm double-poly triple-metal n-well standard CMOS process. The proposed microsystem, incorporating the ASIC, is a 9-channel (8-neural, 1-audio) user programmable reliable wireless neural telemetry microsystem with a weight of 2.2g (including two 1.5V batteries) and size of 2.2×1.1×0.5cm3. The electrical characteristics of this microsystem are extensively characterized via benchtop tests. The transmitter consumes 5mW and has a measured total input referred voltage noise of 4.74µVrms, 6.47µVrms, and 8.27µVrms at transmission distances of 3m, 10m, and 20m, respectively. The measured inter-channel crosstalk is less than 3.5% and battery life is about an hour. To compare the wireless neural telemetry systems, a figure of merit (FoM) is defined as the reciprocal of the power spent on broadcasting one channel over one meter distance. The proposed microsystem’s FoM is an order of magnitude larger compared to all other research and commercial systems. The proposed biotelemetry system has been successfully used in two in-vivo neural recording experiments: i) from a freely roaming South-American cockroach, and ii) from an awake and mobile rat.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91542/1/aborna_1.pd

Ultra Low Power Digital Circuit Design for Wireless Sensor Network Applications

Ny forskning innenfor feltet trådløse sensornettverk åpner for nye og innovative produkter og løsninger. Biomedisinske anvendelser er blant områdene med størst potensial og det investeres i dag betydelige beløp for å bruke denne teknologien for å gjøre medisinsk diagnostikk mer effektiv samtidig som man åpner for fjerndiagnostikk basert på trådløse sensornoder integrert i et ”helsenett”. Målet er å forbedre tjenestekvalitet og redusere kostnader samtidig som brukerne skal oppleve forbedret livskvalitet som følge av økt trygghet og mulighet for å tilbringe mest mulig tid i eget hjem og unngå unødvendige sykehusbesøk og innleggelser. For å gjøre dette til en realitet er man avhengige av sensorelektronikk som bruker minst mulig energi slik at man oppnår tilstrekkelig batterilevetid selv med veldig små batterier. I sin avhandling ” Ultra Low power Digital Circuit Design for Wireless Sensor Network Applications” har PhD-kandidat Farshad Moradi fokusert på nye løsninger innenfor konstruksjon av energigjerrig digital kretselektronikk. Avhandlingen presenterer nye løsninger både innenfor aritmetiske og kombinatoriske kretser, samtidig som den studerer nye statiske minneelementer (SRAM) og alternative minnearkitekturer. Den ser også på utfordringene som oppstår når silisiumteknologien nedskaleres i takt med mikroprosessorutviklingen og foreslår løsninger som bidrar til å gjøre kretsløsninger mer robuste og skalerbare i forhold til denne utviklingen. De viktigste konklusjonene av arbeidet er at man ved å introdusere nye konstruksjonsteknikker både er i stand til å redusere energiforbruket samtidig som robusthet og teknologiskalerbarhet øker. Forskningen har vært utført i samarbeid med Purdue University og vært finansiert av Norges Forskningsråd gjennom FRINATprosjektet ”Micropower Sensor Interface in Nanometer CMOS Technology”

A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries

Engineering andPhysical Science ResearchCouncil (EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt to improve standard cell libraries aimed at operation in the subthreshold regime and in Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is examined, with particular emphasis on how subthreshold physical effects degrade robustness, variability and performance. How prevalent these physical effects are in a commercial 65nm library is then investigated by extensive modeling of a BSIM4.5 compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out and post-layout parasitically extracted models simulated to determine the advantages/disadvantages of each. Full custom ring oscillators are designed and manufactured. Measured results reveal a close correlation with the simulated results, with frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices respectively. The experiment provides the first silicon evidence of the improvement capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well as a mechanism of additional temperature stability in the subthreshold regime. A novel sizing strategy is proposed and pursued to determine whether it is able to produce a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit AES cores are synthesized from the novel sizing strategy and compared against a third AES core synthesized from a state-of-the-art subthreshold standard cell library used by ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in energy-per-cycle of 24% and frequency improvement of 8.65X. A comparison to prior art is then performed. Valid cases are presented where the proposed sizing strategy would be a candidate to produce superior subthreshold circuits

Methods to improve the reliability and resiliency of near/sub-threshold digital circuits

Energy consumption is one of the primary bottlenecks to both large and small scale modern compute platforms. Reducing the operating voltage of digital circuits to voltages where the supply voltage is near or below the threshold of the transistors has recently gained attention as a method to reduce the energy required for computations by as much as 6 times. However, when operating at near/sub-threshold voltages (where the supply voltage is near or below the threshold of the transistors), imperfections in transistor manufacturing, changes in temperature, and other difficult-to-predict factors cause wide variations in the timing of Complementary Metal-Oxide Semiconductor (CMOS) circuits due to an increased sensitivity at lower voltages. These increased variations result in poor aggregate performance and cause increased rates of error occurrence in computation. This work introduces several new methods to improve the reliability of near/sub-threshold circuits. The first is a design automation technique that is used to aid in low-voltage digital standard cell synthesis. Second, two circuit-level techniques are also introduced that aim to improve the reliability and resiliency of digital circuits by means of completion/error detection. These techniques are shown to improve speed and lower energy consumption at low overheads compared to previous methods. Most importantly, these circuit-level methods are specifically designed to operate at low voltages and can themselves tolerate variations and operation in harsh environments. Finally, a test-chip prototype designed in 65nm-CMOS demonstrates the practicality and feasibility of a proposed current sensing error detector

Secure and Energy-Efficient Processors

Security has become an essential part of digital information storage and processing. Both high-end and low-end applications, such as data centers and Internet of Things (IoT), rely on robust security to ensure proper operation. Encryption of information is the primary means for enabling security. Among all encryption standards, Advanced Encryption Standard (AES) is a widely adopted cryptographic algorithm, due to its simplicity and high security. Although encryption standards in general are extremely difficult to break mathematically, they are vulnerable to so-called side channel attacks, which exploit electrical signatures of operating chips, such as power trace or magnetic field radiation, to crack the encryption. Differential Power Analysis (DPA) attack is a representative and powerful side-channel attack method, which has demonstrated high effectiveness in cracking secure chips. This dissertation explores circuits and architectures that offer protection against DPA attacks in high-performance security applications and in low-end IoT applications. The effectiveness of the proposed technologies is evaluated. First, a 128-bit Advanced Encryption Standard (AES) core for high-performance security applications is designed, fabricated and evaluated in a 65nm CMOS technology. A novel charge-recovery logic family, called Bridge Boost Logic (BBL), is introduced in this design to achieve switching-independent energy dissipation and provide intrinsic high resistance against DPA attacks. Based on measurements, the AES core achieves a throughput of 16.90Gbps and power consumption of 98mW, exhibiting 720x higher DPA resistance and 30% lower power than a conventional CMOS counterpart implemented on the same die and operated at the same clock frequency. Second, an AES core designed for low-cost and energy-efficient IoT security applications is designed and fabricated in a 65nm CMOS technology. A novel Dual-Rail Flush Logic (DRFL) with switching-independent power profile is used to yield intrinsic resistance against DPA attacks with minimum area and energy consumption. Measurement results show that this 0.048mm2 core achieves energy consumption as low as 1.25pJ/bit, while providing at least 2604x higher DPA resistance over its conventional CMOS counterpart on the same die, marking the smallest, most energy-efficient and most secure full-datapath AES core published to date.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/138791/1/luss_1.pd

Low-temperature amorphous oxide semiconductors for thin-film transistors and memristors: physical insights and applications

While amorphous oxides semiconductors (AOS), namely InGaZnO (IGZO), have found market application in the display industry, their disruptive properties permit to envisage for more advanced concepts such as System-on-Panel (SoP) in which AOS devices could be used for addressing (and readout) of sensors and displays, for communication, and even for memory as oxide memristors are candidates for the next-generation memories. This work concerns the application of AOS for these applications considering the low thermal budgets (< 180 °C) required for flexible, low cost and alternative substrates. For maintaining low driving voltages, a sputtered multicomponent/multi-layered high-κ dielectric (Ta2O5+SiO2) was developed for low temperature IGZO TFTs which permitted high performance without sacrificing reliability and stability. Devices’ performance under temperature was investigated and the bias and temperature dependent mobility was modelled and included in TCAD simulation. Even for IGZO compositions yielding very high thermal activation, circuit topologies for counteracting both this and the bias stress effect were suggested. Channel length scaling of the devices was investigated, showing that operation for radio frequency identification (RFID) can be achieved without significant performance deterioration from short channel effects, which are attenuated by the high-κ dielectric, as is shown in TCAD simulation. The applicability of these devices in SoP is then exemplified by suggesting a large area flexible radiation sensing system with on-chip clock-generation, sensor matrix addressing and signal read-out, performed by the IGZO TFTs. Application for paper electronics was also shown, in which TCAD simulation was used to investigate on the unconventional floating gate structure. AOS memristors are also presented, with two distinct operation modes that could be envisaged for data storage or for synaptic applications. Employing typical TFT methodologies and materials, these are ease to integrate in oxide SoP architectures