1,187 research outputs found

    A 24-GHz SiGe Phased-Array Receiver—LO Phase-Shifting Approach

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    A local-oscillator phase-shifting approach is introduced to implement a fully integrated 24-GHz phased-array receiver using an SiGe technology. Sixteen phases of the local oscillator are generated in one oscillator core, resulting in a raw beam-forming accuracy of 4 bits. These phases are distributed to all eight receiving paths of the array by a symmetric network. The appropriate phase for each path is selected using high-frequency analog multiplexers. The raw beam-steering resolution of the array is better than 10 [degrees] for a forward-looking angle, while the array spatial selectivity, without any amplitude correction, is better than 20 dB. The overall gain of the array is 61 dB, while the array improves the input signal-to-noise ratio by 9 dB

    Integrated phased array systems in silicon

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    Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-ÎĽm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-ÎĽm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications

    Advanced modulation technology development for earth station demodulator applications

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    The purpose of this contract was to develop a high rate (200 Mbps), bandwidth efficient, modulation format using low cost hardware, in 1990's technology. The modulation format chosen is 16-ary continuous phase frequency shift keying (CPFSK). The implementation of the modulation format uses a unique combination of a limiter/discriminator followed by an accumulator to determine transmitted phase. An important feature of the modulation scheme is the way coding is applied to efficiently gain back the performance lost by the close spacing of the phase points

    Integrated Circuit Design for Hybrid Optoelectronic Interconnects

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    This dissertation focuses on high-speed circuit design for the integration of hybrid optoelectronic interconnects. It bridges the gap between electronic circuit design and optical device design by seamlessly incorporating the compact Verilog-A model for optical components into the SPICE-like simulation environment, such as the Cadence design tool. Optical components fabricated in the IME 130nm SOI CMOS process are characterized. Corresponding compact Verilog-A models for Mach-Zehnder modulator (MZM) device are developed. With this approach, electro-optical co-design and hybrid simulation are made possible. The developed optical models are used for analyzing the system-level specifications of an MZM based optoelectronic transceiver link. Link power budgets for NRZ, PAM-4 and PAM-8 signaling modulations are simulated at system-level. The optimal transmitter extinction ratio (ER) is derived based on the required receiver\u27s minimum optical modulation amplitude (OMA). A limiting receiver is fabricated in the IBM 130 nm CMOS process. By side- by-side wire-bonding to a commercial high-speed InGaAs/InP PIN photodiode, we demonstrate that the hybrid optoelectronic limiting receiver can achieve the bit error rate (BER) of 10-12 with a -6.7 dBm sensitivity at 4 Gb/s. A full-rate, 4-channel 29-1 length parallel PRBS is fabricated in the IBM 130 nm SiGe BiCMOS process. Together with a 10 GHz phase locked loop (PLL) designed from system architecture to transistor level design, the PRBS is demonstrated operating at more than 10 Gb/s. Lessons learned from high-speed PCB design, dealing with signal integrity issue regarding to the PCB transmission line are summarized

    A 90 nm CMOS 16 Gb/s Transceiver for Optical Interconnects

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    Interconnect architectures which leverage high-bandwidth optical channels offer a promising solution to address the increasing chip-to-chip I/O bandwidth demands. This paper describes a dense, high-speed, and low-power CMOS optical interconnect transceiver architecture. Vertical-cavity surface-emitting laser (VCSEL) data rate is extended for a given average current and corresponding reliability level with a four-tap current summing FIR transmitter. A low-voltage integrating and double-sampling optical receiver front-end provides adequate sensitivity in a power efficient manner by avoiding linear high-gain elements common in conventional transimpedance-amplifier (TIA) receivers. Clock recovery is performed with a dual-loop architecture which employs baud-rate phase detection and feedback interpolation to achieve reduced power consumption, while high-precision phase spacing is ensured at both the transmitter and receiver through adjustable delay clock buffers. A prototype chip fabricated in 1 V 90 nm CMOS achieves 16 Gb/s operation while consuming 129 mW and occupying 0.105 mm^2

    Study of radiation-tolerant integrated circuits for space applications

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    Integrated Circuits in space suffer from reliability problems due to the radiative surroundings. High energy particles can ionize the semiconductor and lead to single event effects. For digital systems, the transients can upset the logic values in the storage cells which are called single event upsets, or in the combinational logic circuits which are called single event transients. While for analog systems, the transient will introduce noises and change the operating point. The influence becomes more notable in advanced technologies, where devices are more susceptive to the perturbations due to the compact layout. Recently radiation-hardened-by-design has become an effective approach compared to that of modifying semiconductor processes. Hence it is used in this thesis project. Firstly, three elaborately designed radiation-tolerant registers are implemented. Then, two built-in testing circuits are introduced. They are used to detect and count the single event upsets in the registers during high-energy particle tests. The third part is the pulse width measurement circuit, which is designed for measuring the single event transient pulse width in combinational logic circuits. According to the simulations, transient pulse width ranging from 90.6ps to 2.53ns can be effectively measured. Finally, two frequently used cross-coupled LC tank voltage-controlled oscillators are studied to compare their radiation tolerances. Simulation results show that the direct power connection and transistors working in the deep saturation mode have positive influence toward the radiation tolerance. All of the circuit designs, simulations and analyses are based on STMicroelectronics CMOS 90 nm 7M2T General Process

    Cmos Rotary Traveling Wave Oscillators (Rtwos)

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    Rotary Traveling Wave Oscillator (RTWO) represents a transmission line based technology for multi-gigahertz multiple phase clock generation. RTWO is known for providing low jitter and low phase noise signals but the issue of high power consumption is a major drawback in its application. Direction of wave propagation is random and is determined by the least resistance path in the absence of an external direction control circuit. The objective of this research is to address some of the problems of RTWO design, including high power consumption, uncertainty of propagation direction and optimization of design variables. Included is the modeling of RTWO for sensitivity, phase noise and power analysis. Research objectives were met through design, simulation and implementation. Different designs of RTWO in terms of ring size and number of amplifier stages were implemented and tested. Design tools employed include Agilent ADS, Cadence EDA, SONNET and Altium PCB Designer. Test chip was fabricated using IBM 0.18 ÎĽm RF CMOS technology. Performance measures of interest are tuning range, phase noise and power consumption. Agilent ADS and SONNET were used for electromagnetic modeling of transmission lines and electromagnetic field radiation. For each design, electromagnetic simulations were carried out followed by oscillation synthesis based on circuit simulation in Cadence Spectre. RTWO frequencies between 2 GHz and 12 GHz were measured based on the ring size of transmission lines. Simulated microstrip transmission line segments had a quality factor between 5.5 and 18. For the various designs, power consumption ranged from 20 mW to 120 mW. Measured phase noise ranged between -123 dBc/Hz and -87 dBc/Hz at 1 MHz offset. Development also included the design of a wide band buffer and a printed circuit board with high signal integrity for accurate measurement of oscillation frequency and other performance measures. Simulated performance, schematics and measurement results are presented
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