Novel Ternary Logic Gates Design in Nanoelectronics

In this paper, standard ternary logic gates are initially designed to considerably reduce static power consumption. This study proposes novel ternary gates based on two supply voltages in which the direct current is eliminated and the leakage current is reduced considerably. In addition, ST-OR and ST-AND are generated directly instead of ST-NAND and ST-NOR. The proposed gates have a high noise margin near V_(DD)/4. The simulation results indicated that the power consumption and PDP underwent a~sharp decrease and noise margin showed a considerable increase in comparison to both one supply and two supply based designs in previous works. PDP is improved in the proposed OR, as compared to one supply and two supply based previous works about 83% and 63%, respectively. Also, a memory cell is designed using the proposed STI logic gate, which has a considerably lower static power to store logic ‘1’ and the static noise margin, as compared to other designs

ハードウェアリソースの高稼働率化に基づく細粒度多値リコンフィギャラブルVLSIアーキテクチャ

Tohoku University亀山充隆課

Hardware-Amenable Structural Learning for Spike-based Pattern Classification using a Simple Model of Active Dendrites

This paper presents a spike-based model which employs neurons with functionally distinct dendritic compartments for classifying high dimensional binary patterns. The synaptic inputs arriving on each dendritic subunit are nonlinearly processed before being linearly integrated at the soma, giving the neuron a capacity to perform a large number of input-output mappings. The model utilizes sparse synaptic connectivity; where each synapse takes a binary value. The optimal connection pattern of a neuron is learned by using a simple hardware-friendly, margin enhancing learning algorithm inspired by the mechanism of structural plasticity in biological neurons. The learning algorithm groups correlated synaptic inputs on the same dendritic branch. Since the learning results in modified connection patterns, it can be incorporated into current event-based neuromorphic systems with little overhead. This work also presents a branch-specific spike-based version of this structural plasticity rule. The proposed model is evaluated on benchmark binary classification problems and its performance is compared against that achieved using Support Vector Machine (SVM) and Extreme Learning Machine (ELM) techniques. Our proposed method attains comparable performance while utilizing 10 to 50% less computational resources than the other reported techniques.Comment: Accepted for publication in Neural Computatio

Low-Power Heterogeneous Graphene Nanoribbon-CMOS Multistate Volatile Memory Circuit

Graphene is an emerging nanomaterial believed to be a potential candidate for post-Si nanoelectronics, due to its exotic properties. Recently, a new graphene nanoribbon crossbar (xGNR) device was proposed which exhibits negative differential resistance (NDR). In this paper, a multi-state memory design is presented that can store multiple bits in a single cell enabled by this xGNR device, called Graphene Nanoribbon Tunneling Random Access Memory (GNTRAM). An approach to increase the number of bits per cell is explored alternative to physical scaling to overcome CMOS SRAM limitations. A comprehensive design for quaternary GNTRAM is presented as a baseline, implemented with a heterogeneous integration between graphene and CMOS. Sources of leakage and approaches to mitigate them are investigated. This design is extensively benchmarked against 16nm CMOS SRAMs and 3T DRAM. The proposed quaternary cell shows up to 2.27x density benefit vs. 16nm CMOS SRAMs and 1.8x vs. 3T DRAM. It has comparable read performance and is power-efficient, up to 1.32x during active period and 818x during stand-by against high performance SRAMs. Multi-state GNTRAM has the potential to realize high-density low-power nanoscale embedded memories. Further improvements may be possible by using graphene more extensively, as graphene transistors become available in future

Engineering evaluations and studies. Volume 2: Exhibit B, part 1

Ku-band communication system analysis, S-band system investigations, payload communication investigations, shuttle/TDRSS and GSTDN compatibility analysis are discussed

A Prototype CVNS Distributed Neural Network

Artificial neural networks are widely used in many applications such as signal processing, classification, and control. However, the practical implementation of them is challenged by the number of inputs, storing the weights, and realizing the activation function.In this work, Continuous Valued Number System (CVNS) distributed neural networks are proposed which are providing the network with self-scaling property. This property aids the network to cope spontaneously with different number of inputs. The proposed CVNS DNN can change the dynamic range of the activation function spontaneously according to the number of inputs providing a proper functionality for the network.In addition, multi-valued CVNS DRAMs are proposed to store the weights as CVNS digits. These memories scan store up to 16 levels, equal to 4 bits, on each storage cell. In addition, they use error correction codes to detect and correct the error over the stored values.A synapse-neuron module is proposed to decrease the design cost. It contains both synapse and neuron and the relevant components. In these modules, the activation function is realized through analog circuits which are far more compact compared to the digital look-up-tables while quite accurate.Furthermore, the redundancy between CVNS digits together with the distributed structure of the neuron make the proposal stable against process violations and reduce the noise to signal ration

Quantum and spin-based tunneling devices for memory systems

Rapid developments in information technology, such as internet, portable computing, and wireless communication, create a huge demand for fast and reliable ways to store and process information. Thus far, this need has been paralleled with the revolution in solid-state memory technologies. Memory devices, such as SRAM, DRAM, and flash, have been widely used in most electronic products. The primary strategy to keep up the trend is miniaturization. CMOS devices have been scaled down beyond sub-45 nm, the size of only a few atomic layers. Scaling, however, will soon reach the physical limitation of the material and cease to yield the desired enhancement in device performance. In this thesis, an alternative method to scaling is proposed and successfully realized. The proposed scheme integrates quantum devices, Si/SiGe resonant interband tunnel diodes (RITD), with classical CMOS devices forming a microsystem of disparate devices to achieve higher performance as well as higher density. The device/circuit designs, layouts and masks involving 12 levels were fabricated utilizing a process that incorporates nearly a hundred processing steps. Utilizing unique characteristics of each component, a low-power tunneling-based static random access memory (TSRAM) has been demonstrated. The TSRAM cells exhibit bistability operation with a power supply voltage as low as 0.37 V. Various TSRAM cells were also constructed and their latching mechanisms have been extensively investigated. In addition, the operation margins of TSRAM cells are evaluated based on different device structures and temperature variation from room temperature up to 200oC. The versatility of TSRAM is extended beyond the binary system. Using multi-peak Si/SiGe RITD, various multi-valued TSRAM (MV-TSRAM) configurations that can store more than two logic levels per cell are demonstrated. By this virtue, memory density can be substantially increased. Using two novel methods via ambipolar operation and utilization of enable/disable transistors, a six-valued MV-TSRAM cell are demonstrated. A revolutionary novel concept of integrating of Si/SiGe RITD with spin tunnel devices, magnetic tunnel junctions (MTJ), has been developed. This hybrid approach adds non-volatility and multi-valued memory potential as demonstrated by theoretical predictions and simulations. The challenges of physically fabricating these devices have been identified. These include process compatibility and device design. A test bed approach of fabricating RITD-MTJ structures has been developed. In conclusion, this body of work has created a sound foundation for new research frontiers in four different major areas: integrated TSRAM system, MV-TSRAM system, MTJ/RITD-based nonvolatile MRAM, and RITD/CMOS logic circuits

Emulation of Narrowband Powerline Data Transmission Channels and Evaluation of PLC Systems

This work proposes advanced emulation of the physical layer behavior of NB-PLC channels and the application of a channel emulator for the evaluation of NB-PLC systems. In addition, test procedures and reference channels are proposed to improve efficiency and accuracy in the system evaluation and classification. This work shows that the channel emulator-based solution opens new ways toward flexible, reliable and technology-independent performance assessment of PLC modems