Eight-wavelength, dual detection channel instrument for near-infrared time-resolved diffuse optical spectroscopy

In this paper, we present an innovative instrument for near-infrared time-resolved spectroscopy. The system is based on eight custom-designed pulsed diode lasers emitting at different wavelengths in the near-infrared region (635-1050 nm), all exhibiting an average optical power higher than 1 mW at 40 MHz pulse repetition rate, two custom-made single-photon detectors based on wide-area silicon photomultipliers and two time-measurement units based on a custom time-to-digital converter with 10 ps timing resolution. The system instrument response function has a width narrower than 160 ps (fullwidth at half-maximum) and stability better than ±1% for several hours for all the wavelengths. All the components of the instrument were designed in order to be compact. The entire system will be hosted in a standard 19 inches, 5U rack case (size 48 × 38 × 20 cm3 ). The system communicates with the external computer through a USB 2.0 link and is designed to be employed in a clinical environment. The proposed instrument, thanks to the reduction of its cost and dimensions, paves the way to a wider diffusion of multiwavelengths near-infrared time-resolved spectroscopy systems

0.16 µm–BCD silicon photomultipliers with sharp timing response and reduced correlated noise

Silicon photomultipliers (SiPMs) have improved significantly over the last years and now are widely employed in many different applications. However, the custom fabrication technologies exploited for commercial SiPMs do not allow the integration of any additional electronics, e.g., on-chip readout and analog (or digital) processing circuitry. In this paper, we present the design and characterization of two microelectronics-compatible SiPMs fabricated in a 0.16 µm–BCD (Bipolar-CMOS-DMOS) technology, with 0.67 mm × 0.67 mm total area, 10 × 10 square pixels and 53% fill-factor (FF). The photon detection efficiency (PDE) surpasses 33% (FF included), with a dark-count rate (DCR) of 330 kcps. Although DCR density is worse than that of state-of-the-art SiPMs, the proposed fabrication technology enables the development of cost-effective systems-on-chip (SoC) based on SiPM detectors. Furthermore, correlated noise components, i.e., afterpulsing and optical crosstalk, and photon timing response are comparable to those of best-in-class commercial SiPMs

Miniature high dynamic range time-resolved CMOS SPAD image sensors

Since their integration in complementary metal oxide (CMOS) semiconductor technology in 2003, single photon avalanche diodes (SPADs) have inspired a new era of low cost high integration quantum-level image sensors. Their unique feature of discerning single photon detections, their ability to retain temporal information on every collected photon and their amenability to high speed image sensor architectures makes them prime candidates for low light and time-resolved applications. From the biomedical field of fluorescence lifetime imaging microscopy (FLIM) to extreme physical phenomena such as quantum entanglement, all the way to time of flight (ToF) consumer applications such as gesture recognition and more recently automotive light detection and ranging (LIDAR), huge steps in detector and sensor architectures have been made to address the design challenges of pixel sensitivity and functionality trade-off, scalability and handling of large data rates. The goal of this research is to explore the hypothesis that given the state of the art CMOS nodes and fabrication technologies, it is possible to design miniature SPAD image sensors for time-resolved applications with a small pixel pitch while maintaining both sensitivity and built -in functionality. Three key approaches are pursued to that purpose: leveraging the innate area reduction of logic gates and finer design rules of advanced CMOS nodes to balance the pixel’s fill factor and processing capability, smarter pixel designs with configurable functionality and novel system architectures that lift the processing burden off the pixel array and mediate data flow. Two pathfinder SPAD image sensors were designed and fabricated: a 96 × 40 planar front side illuminated (FSI) sensor with 66% fill factor at 8.25μm pixel pitch in an industrialised 40nm process and a 128 × 120 3D-stacked backside illuminated (BSI) sensor with 45% fill factor at 7.83μm pixel pitch. Both designs rely on a digital, configurable, 12-bit ripple counter pixel allowing for time-gated shot noise limited photon counting. The FSI sensor was operated as a quanta image sensor (QIS) achieving an extended dynamic range in excess of 100dB, utilising triple exposure windows and in-pixel data compression which reduces data rates by a factor of 3.75×. The stacked sensor is the first demonstration of a wafer scale SPAD imaging array with a 1-to-1 hybrid bond connection. Characterisation results of the detector and sensor performance are presented. Two other time-resolved 3D-stacked BSI SPAD image sensor architectures are proposed. The first is a fully integrated 5-wire interface system on chip (SoC), with built-in power management and off-focal plane data processing and storage for high dynamic range as well as autonomous video rate operation. Preliminary images and bring-up results of the fabricated 2mm² sensor are shown. The second is a highly configurable design capable of simultaneous multi-bit oversampled imaging and programmable region of interest (ROI) time correlated single photon counting (TCSPC) with on-chip histogram generation. The 6.48μm pitch array has been submitted for fabrication. In-depth design details of both architectures are discussed

Design and Device fabrication of Silicon Single Photon Avalanche Diodes

Silicon Single Photon Avalanche Diodes (SPADs) have become increasingly important due to a rise in applications requiring very sensitive, low level light detectors. This thesis focuses on the development of a simple monte carlo simulator for the modelling of Si SPADs, along with the fabrication of a Si mesa SPAD. The simulator was validated against experimental and reported Si results. Simulations are performed to compare an n-on-p to a p-on-n SPAD design. These simulations find the n-on-p design offers better timing performance for a given breakdown probability, however the p-on-n design achieves a greater breakdown probability for a given bias. A new temperature-dependent simple monte carlo parameter set is presented for InP APDs. This parameter set is extensively validated from 150-290 K, showing that the simulator is capable of temperature dependent modelling. Finally, a Si mesa SPAD is demonstrated. Follow on work from this thesis could include further development of the simulator to add the simulation of external quenching mechanisms and the validation of the InP parameter set for Geiger-mode simulation. Fabrication of a planar Si SPAD using the same active device structure would allow for the direct comparison of dark current contributions due to the etching process

Emerging semiconductor nanostructure materials for single-photon avalanche diodes

Detecting of light at the single photon level has a far-reaching impact that enables a broad range of applications. In sensing, advances in single-photon detection enable low light applications such as night-time operation, rapid satellite communication, and long-range three-dimensional imaging. In biomedical engineering, advancing single-photon detection technologies positively impacts patient care through important applications like singlet oxygen detection for dose monitoring in cancer treatment. In industry, impacts are made on state-of-the-art technologies like quantum communication which relies on the efficient detection of light at the fundamental limit. While the high impact of single-photon detection technologies is clear, the potential for improvement and challenges faced by prominent single-photon detection technologies remains. Superconducting single-photon detectors push the bounds of performance, but their high cost and lack of portability limits their prospect for far reaching applicability. Single-photon avalanche diodes (SPADs) are a promising alternative which can be made portable, absent of the need for cryogenic cooling, but they generally lack the performance of superconducting detectors. The materials in SPAD designs dictate operation, and conventional materials implemented being defined according to intrinsic material properties, limits SPAD performance. However, new classes of advanced materials are being realized which exhibit modified electromagnetic properties from the engineered arrangement of subwavelength structural units and low-dimensional properties. Such materials include metamaterials and low-dimensional materials, and they have been shown to enhance optoelectrical properties that are critical to avalanche photodiodes, like rapid photo response, enhanced absorption, and reduced dark current. In this work, the application of such advanced materials in SPADs is explored. Tapered nanowires and nanowire arrays are optimized for enhanced absorption and shown experimentally at room temperature to demonstrate high speed near-unity absorptance response at the single-photon level. In the metamaterial and nanowire devices, the gain and timing jitter are shown to be significantly improved over conventional bulk-based designs. Furthermore, the modelling of metamaterials in a SPAD device design and its operation with external single-photon detection circuitry is studied. The analysis is further shown to extend down to single nanowire devices which offers an elegant approach for integrated photonic circuits

Topical Workshop on Electronics for Particle Physics

The purpose of the workshop was to present results and original concepts for electronics research and development relevant to particle physics experiments as well as accelerator and beam instrumentation at future facilities; to review the status of electronics for the LHC experiments; to identify and encourage common efforts for the development of electronics; and to promote information exchange and collaboration in the relevant engineering and physics communities

Multiwavelength studies of the blazars detected by AGILE

La scoperta dell’emissione nei raggi gamma da parti di numerosi Nuclei Galattici Attivi (AGN) con EGRET ed i telescopi Cherenkov è stata una delle più rivoluzionarie scoperte di astrofisica delle alte energie degli ultimi 20 anni, portando all’identificazione di una nuova classe di AGN: i blazar. I blazar sono la sottoclasse più estrema di AGN, caratterizzata da forte emissione di radiazione non-termica attraverso l'intero spettro elettromagnetico. Questa emissione è interpretata come il risultato della radiazione elettromagnetica da un getto relativistico allineato alla linea di vista dell'osservatore, causando una forte amplificazione relativistica dell’emissione osservata. Considerando che la maggiore frazione della potenza totale dei blazar è emessa nei raggi gamma, le informazioni in questa banda energetica sono fondamentali per studiare i diversi modelli di radiazione. Oltre dieci anni dopo l'epoca di EGRET, il satellite AGILE (e successivamente anche il satellite Fermi) ha colmato la lacuna nella banda MeV-GeV dando ulteriore impulso allo studio dei fenomeni di astrofisica delle alte energie nei blazar. Tuttavia, nonostante l'importanza delle informazioni fornite dalle osservazioni nei raggi gamma, studi correlati multifrequenza sono la chiave per raggiungere una migliore comprensione della struttura interna del getto, l'origine dei fotoni seme per il processo di Compton inverso ed i meccanismi di emissione che agiscono nei blazar. Dal suo lancio in Aprile 2007, il satellite AGILE ha rilevato diversi blazar in stato di alta attività: PKS 1510-089, S5 0716+714, 3C 454.3, 3C 273, 3C 279, W Comae, Mrk 421 e PG 1553+113. In questa Tesi saranno presentati i risultati più interessanti dell'analisi multifrequenza di queste sorgenti rilevate da AGILE in raggi gamma, insieme ai dati multifrequenza forniti da altri osservatori come Spitzer, Swift, RXTE, Suzaku, INTEGRAL, MAGIC, VERITAS, nonché dalle osservazioni dal radio all’ottico ottenute da GASP-WEBT e REM. Questa ampia copertura multifrequenza mi ha offerto l'opportunità di studiare le distribuzioni spettrali di energia di queste sorgenti dal radio ai raggi gamma, le variabilità correlata in diverse bande di energia e di indagare i meccanismi responsabili per la loro emissione, scoprendo in alcuni casi un comportamento più complesso rispetto ai modelli standard.The discovery of emission in the gamma-ray domain from many Active Galactic Nuclei (AGNs) by EGRET onboard Compton Gamma-Ray Observatory and the Cherenkov Telescopes was one of the most breakthrough of high energy astrophysics in the last 20 years, leading to the identification of a new class of AGNs: the blazars. Blazars are the most extreme subclass of AGNs, characterized by the emission of strong non-thermal radiation across the entire electromagnetic spectrum, from radio to very high gamma-ray energies. This emission is interpreted as the result of the electromagnetic radiation from a relativistic jet that is viewed closely aligned to the line of sight of the observer, thus causing strong relativistic amplification. Considering that the large fraction of the total power of blazars is emitted in the gamma-rays, information in this energy band is crucial to study the different radiation models. More than ten years after the EGRET era, the AGILE satellite (and subsequently also the Fermi satellite) filled the gap in the MeV-GeV band giving further impulse to the study of the high-energy astrophysics phenomena in blazars. However, notwithstanding the importance of the information provided by the gamma-ray observations, correlated multiwavelength studies are the key to achieve a better understanding of the structure of the inner jet, the origin of the seed photons for the inverse Compton process and the emission mechanisms at work in blazars. Since its launch in April 2007, the AGILE satellite detected several blazars in high activity state: PKS 1510–089, S5 0716+714, 3C 454.3, 3C 273, 3C 279, W Comae, Mrk 421 and PG 1553+113. In this Thesis I will present the most interesting results on multifrequency analysis of these sources detected by AGILE in gamma-rays, together with the multiwavelength data from other observatories such as Spitzer, Swift, RXTE, Suzaku, INTEGRAL, MAGIC, VERITAS, as well as radio-to-optical coverage by means of GASP-WEBT and REM. This large multifrequency coverage gave me the opportunity to study the Spectral Energy Distributions (SEDs) of these sources from radio to gamma-rays, the correlated variability in different energy bands and to investigate the mechanisms responsible for their emission, uncovering in some cases a more complex behaviour with respect to the standard models. The intense gamma-ray flares of S5 0716+714 observed by AGILE in September and October 2007 are among the highest fluxes detected by a BL Lac object and considering the redshift of the source (z = 0.31) the total power transported in the jet during these episodes approaches or slightly exceeds the maximum power generated by a spinning black hole of 10^9 solar masses, challenging the Blandford-Znajek mechanism and confirming the extreme energetics during these flares. The modeling of the SEDs of S5 0716+714 indicated as, even if the broad band emission appears in agreement with the synchrotron self Compton (SSC) paradigm, a more complex model with two SSC components is needed to interpret our data. The case of S5 0716+714 is not unique among the BL Lac objects, also for the multifrequency observation of Mrk 421 and W Comae in June 2008 a one-zone SSC model seems to be a good representation of the broad band spectrum, but the observations collected during the multiwavelength campaigns seem to open to more complex interpretations of the data. Moreover, the dominant emission mechanism in the gamma-ray band for Flat Spectrum Radio Quasars (FSRQs) is the inverse Compton scattering of external photons from the broad line region, but in some particular states also the contribution of seed photons from a hot corona (3C 454.3 in December 2007) or the accretion disk (3C 279) are shown to be important. Therefore, from the modeling of the different SEDs of BL Lacs and FSRQs observed by AGILE seems to emerge that the SSC and the external Compton (EC) frameworks, respectively, are good approximation for describing on average the high activity states of the two flavours of blazars, but going into details of the single observation more complex scenarios sometimes are requested. The possibility to obtain information over the entire electromagnetic spectrum during the multifrequency campaigns organized by AGILE gave me also the opportunity to investigate in some blazars the presence of Seyfert-like features, such as the little and big blue bumps (PKS 1510-089) and the Compton reflection component (3C 273). Moreover, we revealed in the FSRQ PKS 1510-089 some features typical of High-frequency peaked BL Lac objects, such a X-ray harder-when-brighter behaviour during March 2008 and a shift of the synchrotron peak towards higher frequencies during the huge flare of March 2009. Emission in optical and gamma-ray bands seems to be correlated during high activity states of blazars, but not strongly, with a possible lag of the gamma-ray flux with respect to optical one less than one day, both for FSRQs (e.g. 3C 454.3) and BL Lacs (S5 0716+714). On the other hand, during March 2009 a possible delay of the optical emission with respect to the gamma-ray one is detected for PKS 1510-089, suggesting a more complex behaviour in the optical/gamma-ray correlation, especially for FSRQs, where also a contribution of the thermal disk emission is clearly visible