Programmable CMOS Analog-to-Digital Converter Design and Testability

In this work, a programmable second order oversampling CMOS delta-sigma analog-to-digital converter (ADC) design in 0.5µm n-well CMOS processes is presented for integration in sensor nodes for wireless sensor networks. The digital cascaded integrator comb (CIC) decimation filter is designed to operate at three different oversampling ratios of 16, 32 and 64 to give three different resolutions of 9, 12 and 14 bits, respectively which impact the power consumption of the sensor nodes. Since the major part of power consumed in the CIC decimator is by the integrators, an alternate design is introduced by inserting coder circuits and reusing the same integrators for different resolutions and oversampling ratios to reduce power consumption. The measured peak signal-to-noise ratio (SNR) for the designed second order delta-sigma modulator is 75.6dB at an oversampling ratio of 64, 62.3dB at an oversampling ratio of 32 and 45.3dB at an oversampling ratio of 16. The implementation of a built-in current sensor (BICS) which takes into account the increased background current of defect-free circuits and the effects of process variation on ΔIDDQ testing of CMOS data converters is also presented. The BICS uses frequency as the output for fault detection in CUT. A fault is detected when the output frequency deviates more than ±10% from the reference frequency. The output frequencies of the BICS for various model parameters are simulated to check for the effect of process variation on the frequency deviation. A design for on-chip testability of CMOS ADC by linear ramp histogram technique using synchronous counter as register in code detection unit (CDU) is also presented. A brief overview of the histogram technique, the formulae used to calculate the ADC parameters, the design implemented in 0.5µm n-well CMOS process, the results and effectiveness of the design are described. Registers in this design are replaced by 6T-SRAM cells and a hardware optimized on-chip testability of CMOS ADC by linear ramp histogram technique using 6T-SRAM as register in CDU is presented. The on-chip linear ramp histogram technique can be seamlessly combined with ΔIDDQ technique for improved testability, increased fault coverage and reliable operation

Quiescent current testing of CMOS data converters

Power supply quiescent current (IDDQ) testing has been very effective in VLSI circuits designed in CMOS processes detecting physical defects such as open and shorts and bridging defects. However, in sub-micron VLSI circuits, IDDQ is masked by the increased subthreshold (leakage) current of MOSFETs affecting the efficiency of I¬DDQ testing. In this work, an attempt has been made to perform robust IDDQ testing in presence of increased leakage current by suitably modifying some of the test methods normally used in industry. Digital CMOS integrated circuits have been tested successfully using IDDQ and IDDQ methods for physical defects. However, testing of analog circuits is still a problem due to variation in design from one specific application to other. The increased leakage current further complicates not only the design but also testing. Mixed-signal integrated circuits such as the data converters are even more difficult to test because both analog and digital functions are built on the same substrate. We have re-examined both IDDQ and IDDQ methods of testing digital CMOS VLSI circuits and added features to minimize the influence of leakage current. We have designed built-in current sensors (BICS) for on-chip testing of analog and mixed-signal integrated circuits. We have also combined quiescent current testing with oscillation and transient current test techniques to map large number of manufacturing defects on a chip. In testing, we have used a simple method of injecting faults simulating manufacturing defects invented in our VLSI research group. We present design and testing of analog and mixed-signal integrated circuits with on-chip BICS such as an operational amplifier, 12-bit charge scaling architecture based digital-to-analog converter (DAC), 12-bit recycling architecture based analog-to-digital converter (ADC) and operational amplifier with floating gate inputs. The designed circuits are fabricated in 0.5 μm and 1.5 μm n-well CMOS processes and tested. Experimentally observed results of the fabricated devices are compared with simulations from SPICE using MOS level 3 and BSIM3.1 model parameters for 1.5 μm and 0.5 μm n-well CMOS technologies, respectively. We have also explored the possibility of using noise in VLSI circuits for testing defects and present the method we have developed