Preface to the Special Issue on Advanced Microstructural Characterization of Materials

Microstructural characterization is a vital part in materials science, as it plays a key role in understanding the structure-property relationship in materials. Various advanced microstructural characterization techniques have emerged, for example, scanning electron microscopy, transmission electron microscopy, scanning transmission electron microscopy, high resolution (scanning) transmission electron microscopy, electron backscatter diffraction, energy dispersive x-ray spectroscopy, electron energy loss spectroscopy, precession electron diffraction, energy-filtered transmission electron microscopy, and atom probe tomography. The applications of these techniques have greatly advanced the understanding of material microstructures on different scales from micrometer to atomic scale. Advanced microstructural characterization can be applied to a variety of materials such as metals, alloys, ceramics, polymers and composites

3D characterization of CdSe nanoparticles attached to carbon nanotubes

The crystallographic structure of CdSe nanoparticles attached to carbon nanotubes has been elucidated by means of high resolution transmission electron microscopy and high angle annular dark field scanning transmission electron microscopy tomography. CdSe rod-like nanoparticles, grown in solution together with carbon nanotubes, undergo a morphological transformation and become attached to the carbon surface. Electron tomography reveals that the nanoparticles are hexagonal-based with the (001) planes epitaxially matched to the outer graphene layer.Comment: 7 pages, 8 figure

Microscopy of glazed layers formed during high temperature sliding wear at 750C

The evolution of microstructures in the glazed layer formed during high temperature sliding wear of Nimonic 80A against Stellite 6 at 750 ◦C using a speed of 0.314ms−1 under a load of 7N has been investigated using scanning electron microscopy (SEM), energy dispersive analysis by X-ray (EDX), X-ray diffraction (XRD) analysis, scanning tunnelling microscopy (STM) and transmission electron microscopy (TEM). The results indicate the formation of a wear resistant nano-structured glazed layer. The mechanisms responsible for the formation of the nano-polycrystalline glazed layer are discussed

Scanning ultrafast electron microscopy

Progress has been made in the development of four-dimensional ultrafast electron microscopy, which enables space-time imaging of structural dynamics in the condensed phase. In ultrafast electron microscopy, the electrons are accelerated, typically to 200 keV, and the microscope operates in the transmission mode. Here, we report the development of scanning ultrafast electron microscopy using a field-emission-source configuration. Scanning of pulses is made in the single-electron mode, for which the pulse contains at most one or a few electrons, thus achieving imaging without the space-charge effect between electrons, and still in ten(s) of seconds. For imaging, the secondary electrons from surface structures are detected, as demonstrated here for material surfaces and biological specimens. By recording backscattered electrons, diffraction patterns from single crystals were also obtained. Scanning pulsed-electron microscopy with the acquired spatiotemporal resolutions, and its efficient heat-dissipation feature, is now poised to provide in situ 4D imaging and with environmental capability

Lunar sample analysis

A wide variety of lunar sample and meteorite studies were performed. Abstracts of the most recent reports are also attached. Experimental techniques employed have included scanning electron microscopy, transmission electron microscopy, Mossbauer spectroscopy, atomic absorption analysis and a variety of simulation studies

Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking fault in these regions. Precise measurements of the cathodoluminescence signal in the vicinity of the stacking fault give access to the exciton diffusion length near this location