Excitonic properties of strained wurtzite and zinc-blende GaN/Al(x)Ga(1-x)N quantum dots

We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite (WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conduction and valence band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it has a smaller effect on WZ GaN/AlGaN, and very little effect on ZB GaN/AlN quantum dots. As a result, the exciton ground state energy in WZ GaN/AlN quantum dots, with heights larger than 3 nm, exhibits a red shift with respect to the bulk WZ GaN energy gap. The radiative decay time of the red-shifted transitions is large and increases almost exponentially from 6.6 ns for quantum dots with height 3 nm to 1100 ns for the quantum dots with height 4.5 nm. In WZ GaN/AlGaN quantum dots, both the radiative decay time and its increase with quantum dot height are smaller than those in WZ GaN/AlN quantum dots. On the other hand, the radiative decay time in ZB GaN/AlN quantum dots is of the order of 0.3 ns, and is almost independent of the quantum dot height. Our results are in good agreement with available experimental data and can be used to optimize GaN quantum dot parameters for proposed optoelectronic applications.Comment: 18 pages, accepted for publication in the Journal of Applied Physic

Unraveling the mesoscopic character of quantum dots in nanophotonics

We provide a microscopic theory for semiconductor quantum dots that explains the pronounced deviations from the prevalent point-dipole description that were recently observed in spectroscopic experiments on quantum dots in photonic nanostructures. At the microscopic level the deviations originate from structural inhomogeneities generating a large circular quantum current density that flows inside the quantum dot over mesoscopic length scales. The model is supported by the experimental data, where a strong variation of the multipolar moments across the emission spectrum of quantum dots is observed. Our work enriches the physical understanding of quantum dots and is of significance for the fields of nanophotonics, quantum photonics, and quantum-information science, where quantum dots are actively employed.Comment: 6 pages, 5 figure

Decay dynamics and exciton localization in large GaAs quantum dots grown by droplet epitaxy

We investigate the optical emission and decay dynamics of excitons confined in large strain-free GaAs quantum dots grown by droplet epitaxy. From time-resolved measurements combined with a theoretical model we show that droplet-epitaxy quantum dots have a quantum efficiency of about 75% and an oscillator strength between 8 and 10. The quantum dots are found to be fully described by a model for strongly-confined excitons, in contrast to the theoretical prediction that excitons in large quantum dots exhibit the so-called giant oscillator strength. We attribute these findings to localized ground-state excitons in potential minima created by material intermixing during growth. We provide further evidence for the strong-confinement regime of excitons by extracting the size of electron and hole wavefunctions from the phonon-broadened photoluminescence spectra. Furthermore, we explore the temperature dependence of the decay dynamics and, for some quantum dots, observe a pronounced reduction in the effective transition strength with temperature. We quantify and explain these effects as being an intrinsic property of large quantum dots owing to thermal excitation of the ground-state exciton. Our results provide a detailed understanding of the optical properties of large quantum dots in general, and of quantum dots grown by droplet epitaxy in particular.Comment: 13 pages, 7 figure

Highly efficient single photon emission from single quantum dots within a two-dimensional photonic bandgap

We report highly efficient single photon generation from InGaAs self-assembled quantum dots emitting within a two-dimensional photonic bandgap. A strongly suppressed multiphoton probability is obtained for single quantum dots in bulk GaAs and those emitting into the photonic bandgap. In the latter case, photoluminescence saturation spectroscopy is employed to measure a ~17 times enhancement of the average photon extraction efficiency, when compared to quantum dots in bulk GaAs. For quantum dots in the photonic crystal we measure directly an external quantum efficiency up to 26%, much higher than for quantum dots on the same sample without a tailored photonic environment. The results show that highly efficient quantum dot single photon sources can be realized, without the need for complex nanopositioning techniques

Mode Competition in Dual-Mode Quantum Dots Semiconductor Microlaser

This paper describes the modeling of quantum dots lasers with the aim of assessing the conditions for stable cw dual-mode operation when the mode separation lies in the THz range. Several possible models suited for InAs quantum dots in InP barriers are analytically evaluated, in particular quantum dots electrically coupled through a direct exchange of excitation by the wetting layer or quantum dots optically coupled through the homogeneous broadening of their optical gain. A stable dual-mode regime is shown possible in all cases when quantum dots are used as active layer whereas a gain medium of quantum well or bulk type inevitably leads to bistable behavior. The choice of a quantum dots gain medium perfectly matched the production of dual-mode lasers devoted to THz generation by photomixing.Comment: First draft of a paper submitted to Phys Rev A. This version includes an extended discussion about dual-mode lasers and recall some known results about stability. Extended bibliograph