158,172 research outputs found

    Enhanced dielectrophoresis of nanocolloids by dimer formation

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    We investigate the dielectrophoretic motion of charge-neutral, polarizable nanocolloids through molecular dynamics simulations. Comparison to analytical results derived for continuum systems shows that the discrete charge distributions on the nanocolloids have a significant impact on their coupling to the external field. Aggregation of nanocolloids leads to enhanced dielectrophoretic transport, provided that increase in the dipole moment upon aggregation can overcome the related increase in friction. The dimer orientation and the exact structure of the nanocolloid charge distribution are shown to be important in the enhanced transport

    Logarithmic and Riesz Equilibrium for Multiple Sources on the Sphere --- the Exceptional Case

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    We consider the minimal discrete and continuous energy problems on the unit sphere Sd\mathbb{S}^d in the Euclidean space Rd+1\mathbb{R}^{d+1} in the presence of an external field due to finitely many localized charge distributions on Sd\mathbb{S}^d, where the energy arises from the Riesz potential 1/rs1/r^s (rr is the Euclidean distance) for the critical Riesz parameter s=d2s = d - 2 if d3d \geq 3 and the logarithmic potential log(1/r)\log(1/r) if d=2d = 2. Individually, a localized charge distribution is either a point charge or assumed to be rotationally symmetric. The extremal measure solving the continuous external field problem for weak fields is shown to be the uniform measure on the sphere but restricted to the exterior of spherical caps surrounding the localized charge distributions. The radii are determined by the relative strengths of the generating charges. Furthermore, we show that the minimal energy points solving the related discrete external field problem are confined to this support. For d2s<dd-2\leq s<d, we show that for point sources on the sphere, the equilibrium measure has support in the complement of the union of specified spherical caps about the sources. Numerical examples are provided to illustrate our results.Comment: 23 pages, 4 figure

    RTS amplitudes in decananometer MOSFETs: 3-D simulation study

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    In this paper we study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single electron in defect states at the Si/SiO/sub 2/ interface of sub-100-nm (decananometer) MOSFETs employing three-dimensional (3-D) "atomistic" simulations. Both continuous doping charge and random discrete dopants in the active region of the MOSFETs are considered in the simulations. The dependence of the RTS amplitudes on the position of the trapped charge in the channel and on device design parameters such as dimensions, oxide thickness and channel doping concentration is studied in detail. The 3-D simulations offer a natural explanation for the large variation in the RTS amplitudes measured experimentally in otherwise identical MOSFETs. The random discrete dopant simulations result in RTS amplitudes several times higher compared to continuous charge simulations. They also produce closer to the experimentally observed distributions of the RTS amplitudes. The results highlight the significant impact of single charge trapping in the next generation decananometer MOSFETs

    First Study of the Negative Binomial Distribution Applied to Higher Moments of Net-charge and Net-proton Multiplicity Distributions

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    A study of the first four moments (mean, variance, skewness, and kurtosis) and their products (κσ2\kappa\sigma^{2} and SσS\sigma) of the net-charge and net-proton distributions in Au+Au collisions at sNN\sqrt{\rm s_{NN}} = 7.7-200 GeV from HIJING simulations has been carried out. The skewness and kurtosis and the collision volume independent products κσ2\kappa\sigma^{2} and SσS\sigma have been proposed as sensitive probes for identifying the presence of a QCD critical point. A discrete probability distribution that effectively describes the separate positively and negatively charged particle (or proton and anti-proton) multiplicity distributions is the negative binomial (or binomial) distribution (NBD/BD). The NBD/BD has been used to characterize particle production in high-energy particle and nuclear physics. Their application to the higher moments of the net-charge and net-proton distributions is examined. Differences between κσ2\kappa\sigma^{2} and a statistical Poisson assumption of a factor of four (for net-charge) and 40% (for net-protons) can be accounted for by the NBD/BD. This is the first application of the properties of the NBD/BD to describe the behavior of the higher moments of net-charge and net-proton distributions in nucleus-nucleus collisions.Comment: 13 pages, 4 figure

    Coulomb interaction signatures in self-assembled lateral quantum dot molecules

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    We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaAs lateral quantum dot molecules. We apply a voltage along the growth direction that allows us to control the total charge occupancy of the quantum dot molecule. Using a combination of computational modeling and experimental analysis, we assign the observed discrete spectral lines to specific charge distributions. We explain the dynamic processes that lead to these charge configurations through electrical injection and optical generation. Our systemic analysis provides evidence of inter-dot tunneling of electrons as predicted in previous theoretical work.Comment: 9 pages, 4 figure

    Fluctuation Statistics in Networks: a Stochastic Path Integral Approach

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    We investigate the statistics of fluctuations in a classical stochastic network of nodes joined by connectors. The nodes carry generalized charge that may be randomly transferred from one node to another. Our goal is to find the time evolution of the probability distribution of charges in the network. The building blocks of our theoretical approach are (1) known probability distributions for the connector currents, (2) physical constraints such as local charge conservation, and (3) a time-scale separation between the slow charge dynamics of the nodes and the fast current fluctuations of the connectors. We derive a stochastic path integral representation of the evolution operator for the slow charges. Once the probability distributions on the discrete network have been studied, the continuum limit is taken to obtain a statistical field theory. We find a correspondence between the diffusive field theory and a Langevin equation with Gaussian noise sources, leading nevertheless to non-trivial fluctuation statistics. To complete our theory, we demonstrate that the cascade diagrammatics, recently introduced by Nagaev, naturally follows from the stochastic path integral. We extend the diagrammatics to calculate current correlation functions for an arbitrary network. One primary application of this formalism is that of full counting statistics (FCS). We stress however, that the formalism is suitable for general classical stochastic problems as an alternative to the traditional master equation or Doi-Peliti technique. The formalism is illustrated with several examples: both instantaneous and time averaged charge fluctuation statistics in a mesoscopic chaotic cavity, as well as the FCS and new results for a generalized diffusive wire.Comment: Final version accepted in J. Math. Phys. Discussion of conservation laws, Refs., 1 Fig., and minor extensions added. 23 pages, 9 figs., double-column forma
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