Removal of NO in flue gas simulated by the Fe²⁺/Cu²⁺-activated double oxidant system

⋅OHThe wet denitrification technology has a good development prospect due to its simple system and mild reaction conditions, and related research has become a hot topic in the field of flue gas purification. In this work, a novel simultaneous removal technology of NO from flue gas using Fe2+/Cu2+-catalytic H2O2/(NH4)2S2O8 system was developed for the first time. The feasibility of this new flue gas cleaning technology was explored through a series of experiments and performance analyses. The mechanism of oxidation products, free radicals and simultaneous removal of NO was revealed. The effects of the main process parameters on the removal of NO were investigated. Relevant results demonstrated that the removal efficiency of NO was elevated when the concentration of (NH4)2S2O8 or reacting temperature increased, while it was decreased after increasing the raising of Fe2+, Cu2+ and H2O2 concentrations. The main radicals were and·SO4−, using the electron spin resonance technique in the solution, and played a very important role in NO removal. The main products were carried out by ion chromatography and elemental N material accountancy, and the results showed that it was sulfate and nitrate in the solution, which provided theoretical guidance for the subsequent treatment and resource utilization of the absorption solution. The results of the study provided a theoretical basis for the industrial application of wet denitrification.</p

DataSheet1_Plant Phenology and Its Anthropogenic and Natural Influencing Factors in Densely Populated Areas During the Economic Transition Period of China.docx

As a sensitive, observable, and comprehensive indicator of climate change, plant phenology has become a vital topic of global change. Studies about plant phenology and its responses to climate change in natural ecosystems have drawn attention to the effects of human activities on phenology in/around urban regions. The key factors and mechanisms of phenological and human factors in the process of urbanization are still unclear. In this study, we analyzed variations in xylophyta phenology in densely populated cities during the fast urbanization period of China (from 1963 to 1988). We assessed the length of the growing season affected by the temperature and precipitation. Temperature increased the length of the growing season in most regions, while precipitation had the opposite effect. Moreover, the plant-growing season is more sensitive to preseason climate factors than to annual average climate factors. The increased population reduced the length of the growing season, while the growing GDP increased the length of the growing season in most regions (8 out of 13). By analyzing the impact of the industry ratio, we found that the correlation between the urban management of emerging cities (e.g., Chongqing, Zhejiang, and Guizhou) and the growing season is more significant, and the impact is substantial. In contrast, urban management in most areas with vigorously developed heavy industry (e.g., Heilongjiang, Liaoning, and Beijing) has a weak and insignificant effect on plant phenology. These results indicate that different urban development patterns can influence urban plant phenology. Our results provide some support and new thoughts for future research on urban plant phenology.</p

Simple and Ingenious Manner To Build Li-Rich Layered Materials with Surface Layered/Spinel Heterostructures and Li Deficiencies

The voltage and capacity attenuation is one of the main bottlenecks limiting the commercialization of Li-rich layered materials, the introduction of a spinel structure and Li deficiencies into materials may mitigate or suppress these shortcoming. The Li-rich layered materials with surface layered/spinel heterostructures and Li deficiencies (LR-S) are prepared by a simple and ingenious manner; that is, the 10 wt % precursors are added to uptake the volatilize of Li ions, which produced from the Li-rich material (LR-0) in a high-temperature post-treatment process. The generation of the spinel structure and Li deficiencies in the LR-S sample are confirmed by the inductively coupled plasma mass spectrometry, X-ray diffraction, Raman spectra, and high-resolution transmission electron microscopy characterizations. The LR-S sample displayed excellent electrochemical performances; that is, the capacity retentions is 88.92% at 1 C after 200 cycles, and the voltage drop for each cycle is 1.91 mV, respectively. The reason is mainly attributed to the spinel structure serving as a pillar structure and the Li deficiencies modulating the oxidation products of the oxygen ion in the removal/uptake process

Enhanced Rate Performance of Al-Doped Li-Rich Layered Cathode Material via Nucleation and Post-solvothermal Method

Al-doped layered cathode materials Li_{1.5–<i>x</i>}Al_<i>x</i>Mn_0.675Ni_0.1675Co_0.1675O₂ have been successfully synthesized via a rapid nucleation and post-solvothermal method. The surface morphology and crystal structures of Al-doped Li-rich materials are investigated via scanning electron microscopy, X-ray diffraction, Raman spectra, and X-ray photoelectron spectroscopy. After optimization, the Li_1.45Al_0.05Mn_0.675Ni_0.1675Co_0.1675O₂ (Al = 0.05) sample showed excellent electrochemical performance, and the discharge capacities are 323.7 and 120 mAh g^–1 at a rate of 0.1 and 20 C, respectively. These improvements, based on electrochemical performance evaluation and density functional theory calculations, might be ascribed to the increased electron conductivity of layered Li-rich material via Al³⁺ ions doped into a crystal structure

Realization of Topological Corner States in Tailored Photonic Graphene

Higher-order topological semimetals (HOTSMs) represent a novel type of gapless topological phase, hosting boundary states with dimensions at least two lower than those of their bulk geometry. Such nontrivial boundary states have been predicted and observed in three-dimensional (3D) gapless topological systems, representing features of the HOTSMs. However, their two-dimensional (2D) analogs, represented especially by the corner states in monolayer graphene-like structures, have thus far remained only a theoretical exploration. Here, we experimentally demonstrate nontrivial corner states in specially tailored photonic graphene hosting Dirac points, manifesting the HOTSM-like property in a 2D photonic setting. Such corner states in the otherwise gapless system exhibit distinct phase structures depending on the lattice corner and edge geometry, and are completely degenerate with the zero-energy edge states. Remarkably, we find that these “gapless” corner states remain intact at zero-energy even in a finite-sized graphene lattice, protected by chiral symmetry. Unlike corner states in higher-order topological insulators or topological crystalline insulators with certain rotational symmetry, these corner states are localized exclusively to one corner without any coupling to the bulk or other corners, despite long-distance propagation

Realization of second-order photonic square-root topological insulators

Square-root higher-order topological insulators (HOTIs) are recently discovered new topological phases, with intriguing topological properties inherited from a parent lattice Hamiltonian. Different from conventional HOTIs, the square-root HOTIs typically manifest two paired non-zero energy corner states. In this work, we experimentally demonstrate the second-order square-root HOTIs in photonics for the first time to our knowledge, thereby unveiling such distinct corner states. The specific platform is a laser-written decorated honeycomb lattice (HCL), for which the squared Hamiltonian represents a direct sum of the underlying HCL and breathing Kagome lattice. The localized corner states residing in different bandgaps are observed with characteristic phase structures, in sharp contrast to discrete diffraction in a topologically trivial structure. Our work illustrates a scheme to study fundamental topological phenomena in systems with coexistence of spin-1/2 and spin-1 Dirac-Weyl fermions, and may bring about new possibilities in topology-driven photonic devices

Realization of Second-Order Photonic Square-Root Topological Insulators

Square-root higher-order topological insulators (HOTIs) are recently discovered new topological phases, with intriguing topological properties inherited from a parent lattice Hamiltonian. Different from conventional HOTIs, the square-root HOTIs typically manifest two paired nonzero energy corner states. In this work, we experimentally demonstrate the second-order square-root HOTIs in photonics for the first time to our knowledge, thereby unveiling such distinct corner states. The specific platform is a laser-written decorated honeycomb lattice (HCL), for which the squared Hamiltonian represents a direct sum of the underlying HCL and breathing Kagome lattice. The localized corner states residing in different bandgaps are observed with characteristic phase structures, in sharp contrast to the discrete diffraction in a topologically trivial structure. Our work illustrates a scheme to study fundamental topological phenomena in systems with the coexistence of spin-1/2 and spin-1 Dirac-Weyl Fermions and may bring about new possibilities in topology-driven photonic devices

Highly Efficient Heteroleptic Cerium(III) Complexes with a Substituted Pyrazole Ancillary Ligand and Their Application in Blue Organic Light-Emitting Diodes

Compared with red and green organic light-emitting diodes (OLEDs), blue is the bottleneck that restricts the wide development of OLEDs from being the next-generation technology for displays and lighting. As a new type of emitter, a Ce­(III) complex shows many satisfactory advantages, such as a short excited-state lifetime, 100% theoretical exciton utilization efficiency, and tunable emission color. Herein we synthesized three heteroleptic Ce­(III) complexes Ce­(TpMe2)2(dtfpz), Ce­(TpMe2)2(dmpz), and Ce­(TpMe2)2(dppz) with the hydrotris­(3,5-dimethylpyrazolyl)­borate (TpMe2) main ligand and different substituted pyrazole ancillary ligands, namely, 3,5-di­(trifluomethyl)­pyrazolyl (dtfpz), 3,5-dimethylpyrazolyl (dmpz), and 3,5-diphenylpyrazolyl (dppz), and studied their structures and luminescence properties. All the Ce­(III) complexes exhibited a near-unity photoluminescence quantum yield both in solution and as a powder with maximum emission wavelengths in the range of 450–486 nm. The OLED employing Ce­(TpMe2)2(dppz) as the emitter showed the best performance, including a turn-on voltage, maximum luminance, and external quantum efficiency of 3.2 V, 29 200 cd m–2, and 12.5%, respectively

Warm-White-Light Perdeuterated Dy(III) Complex with a Photoluminescence Quantum Yield of up to 72% in Deuterated Chloroform

Herein, a deuteration strategy is proposed to enhance the photoluminescence quantum yield (PLQY) of a Dy(III) complex. The perdeuterated Dy(III) complex Dy(D-DPPOP)3 (D-DPPOP = 6-[bis(phenyl-d5)phosphoryl]picolinate-d3) exhibits a high PLQY of up to 72% in deuterated chloroform, which is 4.8 times higher than that of the nondeuterated Dy(III) complex Dy(DPPOP)3. Then the corresponding ultraviolet-excited light-emitting diode is fabricated, showing a warm-white light with a Commission Internationale de l’Eclairage (CIE) of (0.36, 0.41) and a color temperature of around 4800 K. The deuteration strategy to improve the PLQY of the Dy(III) complex is proved in this work, and it will inspire the further design of white-emission Dy(III) complexes with high efficiency

Fractal-like photonic lattices and localized states arising from singular and nonsingular flatbands

We realize fractal-like photonic lattices using cw-laser-writing technique, thereby observe distinct compact localized states (CLSs) associated with different flatbands in the same lattice setting. Such triangle-shaped lattices, akin to the first generation Sierpinski lattices, possess a band structure where singular non-degenerate and nonsingular degenerate flatbands coexist. By proper phase modulation of an input excitation beam, we demonstrate experimentally not only the simplest CLSs but also their superimposition into other complex mode structures. Furthermore, we show by numerical simulation a dynamical oscillation of the flatband states due to beating of the CLSs that have different eigenenergies. These results may provide inspiration for exploring fundamental phenomena arising from fractal structure, flatband singularity, and real-space topology