3 research outputs found
Nitrophosphorene: A 2D Semiconductor with Both Large Direct Gap and Superior Mobility
A new
two-dimensional phosphorus nitride monolayer (<i>P</i>2<sub>1</sub>/<i>c</i>-PN) with distinct structural and
electronic properties is predicted based on first-principle calculations.
Unlike pristine single-atom group V monolayers such as nitrogene,
phosphorene, arsenene, and antimonene, <i>P</i>2<sub>1</sub>/<i>c</i>-PN has an intrinsic direct band gap of 2.77 eV
that is very robust against the strains. Strikingly, <i>P</i>2<sub>1</sub>/<i>c</i>-PN shows excellent anisotropic carrier
mobility up to 290 829.81 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> along the <i>a</i> direction, which
is about 18 times that in monolayer black phosphorus. This put <i>P</i>2<sub>1</sub>/<i>c</i>-PN way above the general
relation that carrier mobility is inversely proportional to bandgap,
making it a very unique two-dimensional material for nanoelectronics
devices
Hydrolysis of Sulfur Dioxide in Small Clusters of Sulfuric Acid: Mechanistic and Kinetic Study
The
deposition and hydrolysis reaction of SO<sub>2</sub> + H<sub>2</sub>O in small clusters of sulfuric acid and water are studied
by theoretical calculations of the molecular clusters SO<sub>2</sub>–(H<sub>2</sub>SO<sub>4</sub>)<sub><i>n</i></sub>–(H<sub>2</sub>O)<sub><i>m</i></sub> (<i>m</i> = 1,2; <i>n</i> = 1,2). Sulfuric acid exhibits a dramatic
catalytic effect on the hydrolysis reaction of SO<sub>2</sub> as it
lowers the energy barrier by over 20 kcal/mol. The reaction with monohydrated
sulfuric acid (SO<sub>2</sub> + H<sub>2</sub>O + H<sub>2</sub>SO<sub>4</sub> – H<sub>2</sub>O) has the lowest energy barrier of
3.83 kcal/mol, in which the cluster H<sub>2</sub>SO<sub>4</sub>–(H<sub>2</sub>O)<sub>2</sub> forms initially at the entrance channel. The
energy barriers for the three hydrolysis reactions are in the order
SO<sub>2</sub> + (H<sub>2</sub>SO<sub>4</sub>)–H<sub>2</sub>O > SO<sub>2</sub> + (H<sub>2</sub>SO<sub>4</sub>)<sub>2</sub>–H<sub>2</sub>O > SO<sub>2</sub> + H<sub>2</sub>SO<sub>4</sub>–H<sub>2</sub>O. Furthermore, sulfurous acid is more
strongly bonded to
the hydrated sulfuric acid (or dimer) clusters than the corresponding
reactant (monohydrated SO<sub>2</sub>). Consequently, sulfuric acid
promotes the hydrolysis of SO<sub>2</sub> both kinetically and thermodynamically.
Kinetics simulations have been performed to study the importance of
these reactions in the reduction of atmospheric SO<sub>2</sub>. The
results will give a new insight on how the pre-existing aerosols catalyze
the hydrolysis of SO<sub>2</sub>, leading to the formation and growth
of new particles
Plasmonic MoO<sub>2</sub> Nanospheres as a Highly Sensitive and Stable Non-Noble Metal Substrate for Multicomponent Surface-Enhanced Raman Analysis
Semiconductor-based
surface-enhanced Raman spectroscopy is getting
more and more attention because of its great price advantage. One
of the biggest obstacles to the large-scale application of it is the
poor stability. Here, we report that plasmonic MoO<sub>2</sub> nanospheres
can be used as a highly sensitive and stable semiconducting-substrate
material for surface-enhanced Raman scattering (SERS). By using the
MoO<sub>2</sub> nanospheres as Raman substrates, a series of typical
compounds with high attention can be accurately detected. This new
non-noble metal substrate material shows a very high detection limit
of 10<sup>–8</sup> M, and exhibits great near-field enhancement
with one of the highest enhancement factor of 4.8 × 10<sup>6</sup> reported to date. More importantly, the oxide with intermediate
valence displays unexpected ultrahigh stability, which can withstand
the corrosion of strong acid and strong alkali as well as 150 °C
high temperature oxidation in air. Moreover, the accurate detection
of multicomponent samples was also successful on this substrate. These
results show that some simple metal oxides with intermediate valence
may become sensitive and stable SERS substrate materials due to their
abundant free electrons and structure that easily causes hot spots