The visibility study of S-T+_+ Landau-Zener-St\"uckelberg oscillations without applied initialization

Probabilities deduced from quantum information studies are usually based on averaging many identical experiments separated by an initialization step. Such initialization steps become experimentally more challenging to implement as the complexity of quantum circuits increases. To better understand the consequences of imperfect initialization on the deduced probabilities, we study the effect of not initializing the system between measurements. For this we utilize Landau-Zener-St\"uckelberg oscillations in a double quantum dot circuit. Experimental results are successfully compared to theoretical simulations.Comment: 8 pages, 5 figure

From laterally modulated two-dimensional electron gas towards artificial graphene

Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral potential on the two-dimensional electron gas. Using this approach, we found a correlation between parameters of the lateral patterning and the created effective potential and obtain thus insights on how the electronic miniband structure has been tuned. The miniband dispersion was calculated using a simplified model and allowed us to formulate four basic criteria that have to be satisfied to reach graphene-like physics in such systems

Classical percolation fingerprints in the high-temperature regime of the integer quantum Hall effect

We have performed magnetotransport experiments in the high-temperature regime (up to 50 K) of the integer quantum Hall effect for two-dimensional electron gases in semiconducting heterostructures. While the magnetic field dependence of the classical Hall law presents no anomaly at high temperatures, we find a breakdown of the Drude-Lorentz law for the longitudinal conductance beyond a crossover magnetic field B_c ~ 1 T, which turns out to be correlated with the onset of the integer quantum Hall effect at low temperatures. We show that the high magnetic field regime at B > B_c can be understood in terms of classical percolative transport in a smooth disordered potential. From the temperature dependence of the peak longitudinal conductance, we extract scaling exponents which are in good agreement with the theoretically expected values. We also prove that inelastic scattering on phonons is responsible for dissipation in a wide temperature range going from 1 to 50 K at high magnetic fields.Comment: 14 pages + 8 Figure

Composite fermions in periodic and random antidot lattices

The longitudinal and Hall magnetoresistance of random and periodic arrays of artificial scatterers, imposed on a high-mobility two-dimensional electron gas, were investigated in the vicinity of Landau level filling factor ν=1/2. In periodic arrays, commensurability effects between the period of the antidot array and the cyclotron radius of composite fermions are observed. In addition, the Hall resistance shows a deviation from the anticipated linear dependence, reminiscent of quenching around zero magnetic field. Both effects are absent for random antidot lattices. The relative amplitude of the geometric resonances for opposite signs of the effective magnetic field and its dependence on illumination illustrate enhanced soft wall effects for composite fermions

Enhanced charge detection of spin qubit readout via an intermediate state

We employ an intermediate excited charge state of a lateral quantum dot device to increase the charge detection contrast during the qubit state readout procedure, allowing us to increase the visibility of coherent qubit oscillations. This approach amplifies the coherent oscillation magnitude but has no effect on the detector noise resulting in an increase in the signal to noise ratio. In this letter we apply this scheme to demonstrate a significant enhancement of the fringe contrast of coherent Landau-Zener-Stuckleberg oscillations between singlet S and triplet T+ two-spin states.Comment: 3 pages, 3 figure

Bipolar spin blockade and coherent state superpositions in a triple quantum dot

Spin qubits based on interacting spins in double quantum dots have been successfully demonstrated. Readout of the qubit state involves a conversion of spin to charge information, universally achieved by taking advantage of a spin blockade phenomenon resulting from Pauli's exclusion principle. The archetypal spin blockade transport signature in double quantum dots takes the form of a rectified current. Currently more complex spin qubit circuits including triple quantum dots are being developed. Here we show both experimentally and theoretically (a) that in a linear triple quantum dot circuit, the spin blockade becomes bipolar with current strongly suppressed in both bias directions and (b) that a new quantum coherent mechanism becomes relevant. Within this mechanism charge is transferred non-intuitively via coherent states from one end of the linear triple dot circuit to the other without involving the centre site. Our results have implications in future complex nano-spintronic circuits.Comment: 21 pages, 7 figure

Quantum Hall induced currents and the magnetoresistance of a quantum point contact

We report an investigation of quantum Hall induced currents by simultaneous measurements of their magnetic moment and their effect on the conductance of a quantum point contact (QPC). Features in the magnetic moment and QPC resistance are correlated at Landau-level filling factors nu=1, 2 and 4, which demonstrates the common origin of the effects. Temperature and non-linear sweep rate dependences are observed to be similar for the two effects. Furthermore, features in the noise of the induced currents, caused by breakdown of the quantum Hall effect, are observed to have clear correlations between the two measurements. In contrast, there is a distinct difference in the way that the induced currents decay with time when the sweeping field halts at integer filling factor. We attribute this difference to the fact that, while both effects are sensitive to the magnitude of the induced current, the QPC resistance is also sensitive to the proximity of the current to the QPC split-gate. Although it is clearly demonstrated that induced currents affect the electrostatics of a QPC, the reverse effect, the QPC influencing the induced current, was not observed

Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors

In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors. The single-particle Zeeman energy is tuned through the application of an additional in-plane magnetic field. Both the evolution of the spin polarization of the system and the critical magnetic field for spin splitting are well described as a function of the tilt angle of the sample in the magnetic field.Comment: Published in Phys. Rev.

Quantum interference and phonon-mediated back-action in lateral quantum dot circuits

Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased quantum point contact. It is critical to understand the back-action disturbances resulting from such a measurement approach. Previous studies have indicated that quantum point contact detectors emit phonons which are then absorbed by nearby qubits. We report here the observation of a pronounced back-action effect in multiple dot circuits where the absorption of detector-generated phonons is strongly modified by a quantum interference effect, and show that the phenomenon is well described by a theory incorporating both the quantum point contact and coherent phonon absorption. Our combined experimental and theoretical results suggest strategies to suppress back-action during the qubit readout procedure.Comment: 25 pages, 8 figure

The origin of switching noise in GaAs/AlGaAs lateral gated devices

We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this noise, while an asymmetric bias exacerbates it. We propose a model in which the noise originates from a leakage current of electrons that tunnel through the Schottky barrier under the gate into the doped layer. The key to reducing noise is to keep this barrier opaque under experimental conditions. Bias cooling reduces the density of ionized donors, which builds in an effective negative gate voltage. A smaller negative bias is therefore needed to reach the desired operating point. This suppresses tunnelling from the gate and hence the noise. The reduction in the density of ionized donors also strengthens the barrier to tunneling at a given applied voltage. Support for the model comes from our direct observation of the leakage current into a closed quantum dot, around $10^{-20} \mathrm{A}$ for this device. The current was detected by a neighboring quantum point contact, which showed monotonic steps in time associated with the tunneling of single electrons into the dot. If asymmetric gate voltages are applied, our model suggests that the noise will increase as a consequence of the more negative gate voltage applied to one of the gates to maintain the same device conductance. We observe exactly this behaviour in our experiments.Comment: 8 pages, 7 figure