Roadmap for Gain-Bandwidth-Product Enhanced Photodetectors

Photodetectors are key optoelectronic building blocks performing the essential optical-to-electrical signal conversion, and unlike solar cells, operate at a specific wavelength and at high signal or sensory speeds. Towards achieving high detector performance, device physics, however, places a fundamental limit of the achievable detector sensitivity, such as responsivity and gain, when simultaneously aimed to increasing the detectors temporal response, speed, known as the gain-bandwidth product (GBP). While detectors GBP has been increasing in recent years, the average GBP is still relatively modest (~10^6-10^7 Hz-A/W). Here we discuss photodetector performance limits and opportunities based on arguments from scaling length theory relating photocarrier channel length, mobility, electrical resistance with optical waveguide mode constrains. We show that short-channel detectors are synergistic with slot-waveguide approaches, and when combined, offer a high-degree of detector design synergy especially for the class of nanometer-thin materials. Indeed, we find that two dimensional material-based detectors are not limited by their low mobility and can, in principle, allow for 100 GHz fast response rates. However, contact resistance is still a challenge for such thin materials, a research topic that is still not addressed yet. An interim solution is to utilize heterojunction approaches for functionality separation. Nonetheless, atomistically- and nanometer-thin materials used in such next-generation scaling length theory based detectors also demand high material quality and monolithic integration strategies into photonic circuits including foundry-near processes. As it stands, this letter aims to guide the community if achieving the next generation photodetectors aiming for a performance target of GBP = 10^12 Hz-A/W

Integrated Photonic Tensor Processing Unit for a Matrix Multiply: a Review

The explosion of artificial intelligence and machine-learning algorithms, connected to the exponential growth of the exchanged data, is driving a search for novel application-specific hardware accelerators. Among the many, the photonics field appears to be in the perfect spotlight for this global data explosion, thanks to its almost infinite bandwidth capacity associated with limited energy consumption. In this review, we will overview the major advantages that photonics has over electronics for hardware accelerators, followed by a comparison between the major architectures implemented on Photonics Integrated Circuits (PIC) for both the linear and nonlinear parts of Neural Networks. By the end, we will highlight the main driving forces for the next generation of photonic accelerators, as well as the main limits that must be overcome

Waveguide based Electroabsorption Modulator Performance

Electro-optic modulation is a key function for data communication. Given the vast amount of data handled, understanding the intricate physics and trade-offs of modulators on-chip allows revealing performance regimes not explored yet. Here we show a holistic performance analysis for waveguide-based electro-absorption modulators. Our approach centers around material properties revealing obtainable optical absorption leading to effective modal cross-section, and material broadening effects. Taken together both describe the modulator physical behavior entirely. We consider a plurality of material modulation classes to include two-level absorbers such as quantum dots, free carrier accumulation or depletion such as ITO or Silicon, two-dimensional electron gas in semiconductors such as quantum wells, Pauli blocking in Graphene, and excitons in two-dimensional atomic layered materials such as found in transition metal dichalcogendies. Our results show that reducing the modal area generally improves modulator performance defined by the amount of induced electrical charge, and hence the energy-per-bit function, required switching the signal. We find that broadening increases the amount of switching charge needed. While some material classes allow for reduced broadening such as quantum dots and 2-dimensional materials due to their reduced Coulomb screening leading to increased oscillator strengths, the sharpness of broadening is overshadowed by thermal effects independent of the material class. Further we find that plasmonics allows the switching charge and energy-per-bit function to be reduced by about one order of magnitude compared to bulk photonics. This analysis is aimed as a guide for the community to predict anticipated modulator performance based on both existing and emerging materials

Electrical-Driven Plasmon Source of Silicon Based on Quantum Tunneling

A silicon-based light source presents an unreached goal in the field of photonics due to silicon’s indirect electronic band structure preventing direct carrier recombination and subsequent photon emission. Here, we utilize inelastically tunneling electrons to demonstrate an electrically driven light emitting silicon-based tunnel junction operating at room temperature. We show that such a junction is a source for plasmons driven by the electrical tunnel current. We find that the emission spectrum is not given by the quantum condition where the emission frequency would be proportional to the applied voltage, but the spectrum is determined by the spectral overlap between the energy-dependent tunnel current and the modal dispersion of the plasmon. By coupling an internal electric field enhancement with an external k-vector matching grating, we were able to demonstrate a 10-fold increase in the internal efficiency and a 40-fold increase in overall quantum efficiency. Such an electron tunneling-based mechanism could lead to a new class of solid-state light sources with unique features such as down-scalability and temporal responses that are significantly shorter than that of light-emitting diodes

Analytical approach of Brillouin Amplification over threshold

We report on an accurate closed form analytical model for the gain of a Brillouin fiber amplifier that accounts for material loss in the depleted pump regime. We determined the operational model limits with respect to its relevant parameters and pump regimes through both numerical and experimental validation. As such, our results enable accurate performance prediction of Brillouin fiber amplifiers operating in the weak pump, high gain, and saturation regimes alike

An electrically-driven Carbon nanotube-based plasmonic laser on Silicon

Photonic signal processing requires efficient on-chip light sources with higher modulation bandwidths. Todays conventional fastest semiconductor diode lasers exhibit modulation speeds only on the order of a few tens of GHz due to gain compression effects and parasitic electrical capacitances. Here we theoretically show an electrically-driven Carbon nanotube (CNT)-based laser utilizing strong light-matter-interaction via monolithic integration into Silicon photonic crystal nanobeam (PCNB) cavities. The laser is formed by single-walled CNTs inside a combo-cavity consisting of both a plasmonic metal-oxide-semiconductor hybrid mode embedded in the one dimensional PCNB cavity. The emission originates from interband recombinations of electrostatically-doped nanotubes depending on the tubes chirality towards matching the C-band. Our simulation results show that the laser operates at telecom frequencies resulting in a power output > 3 (100) uW and > 100 (1000)GHz modulation speed at 1x (10x) threshold. Such monolithic integration schemes provide an alternative promising approach for light source in future photonics integrated circuits

Integrated Nanocavity Plasmon Light Sources for On-Chip Optical Interconnects

Next generation on-chip light sources require high modulation bandwidth, compact footprint, and efficient power consumption. Plasmon-based sources are able to address the footprint challenge set by both the diffraction limited of light and internal laser physics such as plasmon utilization. However, the high losses, large plasmonic-momentum of these sources hinder efficient light coupling to on-chip waveguides, thus, questioning their usefulness. Here we show that plasmon light sources can be useful devices; they can deliver efficient outcoupling power to on-chip waveguides and are able to surpass modulation speeds set by gain-compression. We find that waveguide-integrated plasmon nanocavity sources allow to transfer about ∼60% of their emission into planar on-chip waveguides, while sustaining a physical small footprint of ∼0.06 μm². These sources are able to provide output powers of tens of microwatts for microamp-low injection currents and reach milliwatts for higher pump rates. Moreover, the direct modulation bandwidth exceeds that of classical, gain compression-limited on-chip sources by more than 200%. Furthermore, these novel sources feature high power efficiencies (∼1 fJ/bit) enabled by both minuscule electrical capacitance and efficient internal photon utilization. Such strong light–matter interaction devices might allow redesigning photonic circuits that only demand microwatts of signal power in the future

Hexagonal Transverse Coupled Cavity VCSEL Redefining the High-Speed Lasers

The vertical-cavity surface-emitting lasers (VCSELs) have emerged as a vital approach for realizing energy efficient, high speed optical interconnects in the data center and supercomputers. As of today, VCSEL is the most suitable for mass production in terms of cost-effectiveness and reliability. However, there are still key challenges for higher speed modulation above 40 GHz. Here, a hexagonal transverse coupled cavity VCSEL adiabatically coupled through the center cavity is proposed. A 3-dB roll-off modulation bandwidth of 45 GHz is demonstrated, which is five times greater than a conventional VCSEL fabricated on the same epi-wafer structure. While a parity time (PT) symmetry approaches add loss to engineer the topological state of the laser system, here, a radical paradigm shift with gain introduces symmetry breaking. This idea, then enables a single mode operation with a side-mode suppression-ratio (SMSR) of > 30 decibels and signal-to-noise ratio (SNR) of > 45 decibels. The energy distribution inside the coupled cavity system is also redistributed to provide a coherent gain in a spatially separated system. Consequently, throughput power is three times higher than that of the conventional VCSEL

Electronic Bottleneck Suppression in Next-generation Networks with Integrated Photonic Digital-to-analog Converters

Digital-to-analog converters (DAC) are indispensable functional units in signal processing instrumentation and wide-band telecommunication links for both civil and military applications. Since photonic systems are capable of high data throughput and low latency, an increasingly found system limitation stems from the required domain-crossing such as digital-to-analog, and electronic-to-optical. A photonic DAC implementation, in contrast, enables a seamless signal conversion with respect to both energy efficiency and short signal delay, often require bulky discrete optical components and electric-optic transformation hence introducing inefficiencies. Here, we introduce a novel coherent parallel photonic DAC concept along with an experimental demonstration capable of performing this digital-to-analog conversion without optic-electric-optic domain crossing. This design hence guarantees a linear intensity weighting among bits operating at high sampling rates, yet at a reduced footprint and power consumption compared to other photonic alternatives. Importantly, this photonic DAC could create seamless interfaces of next-generation data processing hardware for data-centers, task-specific compute accelerators such as neuromorphic engines, and network edge processing applications

Plasmonic Fabry-Pérot Nanocavity

We experimentally demonstrate a novel, all-plasmonic nanoscopic cavity exhibiting Q-factors up to 200 at visible frequencies. The Fabry-Pérot type resonator uses tall metallic fins that reflect up to 98% of incident surface plasmon to concentrate light within a subwavelength cavity mode. High aspect ratio metal fins, constructed using lithography and electroplating, reduce surface plasmon scattering out of the surface, while a short cavity length reduces the propagation loss. A simple Fabry-Pérot cavity model adapted for surface plasmon dispersion and reflection describes the underlying physics of the nanocavities and the results agree well with Johnson’s and Christie’s permittivity data. The occurrence of an optimum wavelength for plasmon storage in these cavities allows us to clearly visualize the fundamental trade-off between propagation loss and the spatial extent of surface plasmon polaritons. The subwavelength optical mode area within these cavities enables the enhancement of weak optical processes such as spontaneous emission and nonlinear optics at nanoscale dimensions