4 research outputs found
Laminated Graphene Films for Flexible Transparent Thin Film Encapsulation
We introduce a simple, inexpensive,
and large-area flexible transparent
lamination encapsulation method that uses graphene films with polydimethylsiloxane
(PDMS) buffer on polyethylene terephthalate (PET) substrate. The number
of stacked graphene layers (<i>n</i><sub>G</sub>) was increased
from 2 to 6, and 6-layered graphene-encapsulation showed high impermeability
to moisture and air. The graphene-encapsulated polymer light emitting
diodes (PLEDs) had stable
operating characteristics, and the operational lifetime of encapsulated
PLEDs increased as <i>n</i><sub>G</sub> increased. Calcium
oxidation test data confirmed the improved impermeability of graphene-encapsulation
with increased <i>n</i><sub>G</sub>. As a practical application,
we demonstrated large-area flexible organic light emitting diodes
(FOLEDs) and transparent FOLEDs that were encapsulated by our polymer/graphene
encapsulant
Degradation Protection of Color Dyes Encapsulated by Graphene Barrier Films
The
decolorization of paintings, photographs, and artworks is a
common phenomenon related to the oxidative degradation of color dyes
reacting with oxygen or water molecules, which also causes a critical
problem in organic light-emitting diodes (OLEDs). It is expected that
the gas-impermeable property of graphene and h-BN can be utilized
to protect the color dyes from degradation. However, the transfer
method has been limited to a polymer with high glass transition temperature
(Tg) or a glass substrate due to hot or
wet transfer conditions. Here, we report the dry transfer coating
of the graphene barrier films on flexible substrates at room temperature
using a roll-to-roll process to prevent the bleaching of color dyes,
which can be widely used to protect various colorization and light-emitting
materials for sustainable printing and display technologies in the
future
Quantifying Doping Efficiency to Probe the Effects of Nanoscale Morphology and Solvent Swelling in Molecular Doping of Conjugated Polymers
We study the doping of conjugated polymers from droplets
of molecular
dopant solutions, as might be used in additive manufacturing approaches.
We compare the doping efficiency of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane
(F4TCNQ) solutions between two model conjugated polymers, regioregular
poly(3-hexylthiophene) (P3HT) and poly(bithiophene-thienothiophene)
copolymer with a triethylene glycol side chain (P(g32T-TT)).
We find that F4TCNQ dopes P(g32T-TT) more efficiently from
solution, producing films with >103 times higher conductivity.
Using spectroelectrochemistry to calibrate polaron spectra to known
hole injection levels, we quantify the doping efficiency (polarons
created/dopant molecule added) to be higher than 170% for P(g32T-TT) but only 47.2% for P3HT. We further explore the differences
in molecular doping using a combination of scanning Kelvin probe microscopy
(SKPM) and conductive atomic force microscopy (cAFM). We explore doping
efficiency and aggregation as a function of the solvent of the dopant
solution, side chain, and regioregularity of conjugated polymers;
we show that the doping efficiency and dopant aggregation are both
correlated with the ability of the dopant/solvent solution to swell
the conjugated polymer, with combinations that swell, resulting in
more efficient doping and smoother films with less aggregation
Solution-Processed n‑Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes
n-Type
doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)
dimethylamine (N-DMBI) reduces a work function (WF) of graphene by
∼0.45 eV without significant reduction of optical transmittance.
Solution process of N-DMBI on graphene provides effective n-type doping
effect and air-stability at the same time. Although neutral N-DMBI
act as an electron receptor leaving the graphene p-doped, radical
N-DMBI acts as an electron donator leaving the graphene n-doped, which
is demonstrated by density functional theory. We also verify the suitability
of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer
light-emitting diodes (PLEDs) by using various analytical methods.
Inverted PLEDs using a graphene cathode doped with N-DMBI radical
showed dramatically improved device efficiency (∼13.8 cd/A)
than did inverted PLEDs with pristine graphene (∼2.74 cd/A).
N-DMBI-doped graphene can provide a practical way to produce graphene
cathodes with low WF in various organic optoelectronics