7 research outputs found
Analyzing Dirac Cone and Phonon Dispersion in Highly Oriented Nanocrystalline Graphene
Chemical
vapor deposition (CVD) is one of the most promising growth
techniques to scale up the production of monolayer graphene. At present,
there are intense efforts to control the orientation of graphene grains
during CVD, motivated by the fact that there is a higher probability
for oriented grains to achieve seamless merging, forming a large single
crystal. However, it is still challenging to produce single-crystal
graphene with no grain boundaries over macroscopic length scales,
especially when the nucleation density of graphene nuclei is high.
Nonetheless, nanocrystalline graphene with highly oriented grains
may exhibit single-crystal-like properties. Herein, we investigate
the spectroscopic signatures of graphene film containing highly oriented,
nanosized grains (20ā150 nm) using angle-resolved photoemission
spectroscopy (ARPES) and high-resolution electron energy loss spectroscopy
(HREELS). The robustness of the Dirac cone, as well as dispersion
of its phonons, as a function of grapheneās grain size and
before and after film coalescence, was investigated. In view of the
sensitivity of atomically thin graphene to atmospheric adsorbates
and intercalants, ARPES and HREELS were also used to monitor the changes
in spectroscopic signatures of the graphene film following exposure
to the ambient atmosphere
Highly Active and Selective Zr/MCF Catalyst for Production of 1,3-Butadiene from Ethanol in a Dual Fixed Bed Reactor System
Copper
and zirconium oxide clusters were highly dispersed on mesocellular
siliceous foam (MCF), a mesoporous silica support with ultra large,
interconnected nanopores. These catalysts (denoted as Cu/MCF and Zr/MCF)
were separately loaded into two fixed bed reactors as catalysts for
the conversion of ethanol (EtOH) to 1,3-butadiene (BD). Under optimal
conditions, high BD selectivity (up to 73%) and ethanol conversion
(up to 96%) were achieved at weight hourly space velocities of 1.5
and 3.7 h<sup>ā1</sup>. This translates to an unprecedented
productivity of 1.4 g<sub>BD</sub>/g<sub>catalyst</sub> h<sup>ā1</sup> (208 g<sub>BD</sub>/l<sub>catalyst</sub> h<sup>ā1</sup>).
The high catalytic performance is attributed to the highly selective
and active catalysts. The EtOH dehydrogenation activity of Cu/MCF
could be accurately controlled in the first reactor, which delivers
a fixed ratio of the acetaldehyde/EtOH mixture to Zr/MCF in the second
reactor. The optimal ratio minimizes EtOH dehydration to ethylene
by Zr/MCF, while maximizing the selectivity to BD. MCF was found to
be superior over commercial porous silica in terms of EtOH conversion,
BD selectivity, and tolerance to coking. High BD selectivity was maintained
with a slight decrease in EtOH conversion over 42 h, which was readily
restored upon regeneration by thermal treatment in air
Gate-Tunable Giant Stark Effect in Few-Layer Black Phosphorus
Two-dimensional black
phosphorus
(BP) has sparked enormous research interest due to its high carrier
mobility, layer-dependent direct bandgap and outstanding in-plane
anisotropic properties. BP is one of the few two-dimensional materials
where it is possible to tune the bandgap over a wide energy range
from the visible up to the infrared. In this article, we report the
observation of a giant Stark effect in electrostatically gated few-layer
BP. Using low-temperature scanning tunnelling microscopy, we observed
that in few-layer BP, when electrons are injected, a monotonic reduction
of the bandgap occurs. The injected electrons compensate the existing
defect-induced holes and achieve up to 35.5% bandgap modulation in
the light-doping regime. When probed by tunnelling spectroscopy, the
local density of states in few-layer BP shows characteristic resonance
features arising from layer-dependent sub-band structures due to quantum
confinement effects. The demonstration of an electrical gate-controlled
giant Stark effect in BP paves the way to designing electro-optic
modulators and photodetector devices that can be operated in a wide
electromagnetic spectral range
Resolving the Spatial Structures of Bound Hole States in Black Phosphorus
Understanding
the local electronic properties of individual defects
and dopants in black phosphorus (BP) is of great importance for both
fundamental research and technological applications. Here, we employ
low-temperature scanning tunnelling microscope (LT-STM) to probe the
local electronic structures of single acceptors in BP. We demonstrate
that the charge state of individual acceptors can be reversibly switched
by controlling the tip-induced band bending. In addition, acceptor-related
resonance features in the tunnelling spectra can be attributed to
the formation of Rydberg-like bound hole states. The spatial mapping
of the quantum bound states shows two distinct shapes evolving from
an extended ellipse shape for the 1s ground state to a dumbbell shape
for the 2p<sub><i>x</i></sub> excited state. The wave functions
of bound hole states can be well-described using the hydrogen-like
model with anisotropic effective mass, corroborated by our theoretical
calculations. Our findings not only provide new insight into the many-body
interactions around single dopants in this anisotropic two-dimensional
material but also pave the way to the design of novel quantum devices
Surface Functionalization of Black Phosphorus via Potassium toward High-Performance Complementary Devices
Two-dimensional
black phosphorus configured field-effect transistor
devices generally show a hole-dominated ambipolar transport characteristic,
thereby limiting its applications in complementary electronics. Herein,
we demonstrate an effective surface functionalization scheme on few-layer
black phosphorus, through in situ surface modification with potassium,
with a view toward high performance complementary device applications.
Potassium induces a giant electron doping effect on black phosphorus
along with a clear bandgap reduction, which is further corroborated
by in situ photoelectron spectroscopy characterizations. The electron
mobility of black phosphorus is significantly enhanced to 262 (377)
cm<sup>2</sup> V<sup>ā1</sup> s<sup>ā1</sup> by over
1 order of magnitude after potassium modification for two-terminal
(four-terminal) measurements. Using lithography technique, a spatially
controlled potassium doping technique is developed to establish high-performance
complementary devices on a single black phosphorus nanosheet, for
example, the pān homojunction-based diode achieves a near-unity
ideality factor of 1.007 with an on/off ratio of ā¼10<sup>4</sup>. Our findings coupled with the tunable nature of in situ modification
scheme enable black phosphorus as a promising candidate for further
complementary electronics
Chemical Vapor Deposition of Large-Size Monolayer MoSe<sub>2</sub> Crystals on Molten Glass
We
report the fast growth of high-quality millimeter-size monolayer
MoSe<sub>2</sub> crystals on molten glass using an ambient pressure
CVD system. We found that the isotropic surface of molten glass suppresses
nucleation events and greatly improves the growth of large crystalline
domains. Triangular monolayer MoSe<sub>2</sub> crystals with sizes
reaching ā¼2.5 mm, and with a room-temperature carrier mobility
up to ā¼95 cm<sup>2</sup>/(VĀ·s), can be synthesized in
5 min. The method can also be used to synthesize millimeter-size monolayer
MoS<sub>2</sub> crystals. Our results demonstrate that āliquid-stateā
glass is a highly promising substrate for the low-cost growth of high-quality
large-size 2D transition metal dichalcogenides (TMDs)
Mo-Terminated Edge Reconstructions in Nanoporous Molybdenum Disulfide Film
The
catalytic and magnetic properties of molybdenum disulfide (MoS<sub>2</sub>) are significantly enhanced by the presence of edge sites.
One way to obtain a high density of edge sites in a two-dimensional
(2D) film is by introducing porosity. However, the large-scale bottom-up
synthesis of a porous 2D MoS<sub>2</sub> film remains challenging
and the correlation of growth conditions to the atomic structures
of the edges is not well understood. Here, using molecular beam epitaxy,
we prepare wafer-scale nanoporous MoS<sub>2</sub> films under conditions
of high Mo flux and study their catalytic and magnetic properties.
Atomic-resolution electron microscopy imaging of the pores reveals
two new types of reconstructed Mo-terminated edges, namely, a distorted
1T (DT) edge and the Mo-Klein edge. Nanoporous MoS<sub>2</sub> films
are magnetic up to 400 K, which is attributed to the presence of Mo-terminated
edges with unpaired electrons, as confirmed by density functional
theory calculation. The small hydrogen adsorption free energy at these
Mo-terminated edges leads to excellent activity for the hydrogen evolution
reaction