BILIPROTEINS FROM THE BUTTERFLY Pieris brassicae STUDIED BY TIME-RESOLVED FLUORESCENCE AND COHERENT ANTI-STOKES RAMAN SPECTROSCOPY

The fluorescence decay time of the biliverdin IX7 chromophore present in biliproteins isolated from Pieris brassicae is determined to be 44 ± 3 ps. This value suggests a cyclic helical chromophore structure. The vibrational frequencies determined by CARS-spectroscopy are compared with those of model compounds. The data confirm that the chromophore in the protein-bound state adopts a cyclic-helical, flexible conformation

Evidence for charged critical behavior in the pyrochlore superconductor RbOs2O6

We analyze magnetic penetration depth data of the recently discovered superconducting pyrochlore oxide RbOs2O6. Our results strongly suggest that in RbOs2O6 charged critical fuctuations dominate the temperature dependence of the magnetic penetration depth near Tc. This is in contrast to the mean-field behavior observed in conventional superconductors and the uncharged critical behavior found in nearly optimally doped cuprate superconductors. However, this finding agrees with the theoretical predictions for charged criticality and the charged criticality observed in underdoped YBa2Cu3O6.59.Comment: 5 pages, 4 figure

HTS quasiparticle injection devices with large current gain at 77 K

Recent progress on the development of planar QP-injection devices using YBCO and STO as an epitaxial injection barrier will be discussed. The main problem for HTS injection devices is to grow reliably a well defined, ultra-thin tunneling barrier suitable for QP tunneling. For this purpose, we used inverted cylindrical magnetron sputtering to first optimize the smoothness of our YBCO films by controlling tightly an relevant sputtering conditions. We are able to prepare smooth (001) YBCO films on (001) STO substrates on a routine basis with an average roughness varying between 1 and 2 nm. With these flat YBCO films both planar as well as grain boundary junctions were fabricated using epitaxial STO barriers between 2 and 8 nm thick and a 50 nm of Au counter electrode. Planar junctions with 6 nm STO barriers were in most cases fully insulating, in some cases, a current gain of up to 7.4 at 77 K was obtained. For 3 nm STO barriers, the highest current gain was 15 at 81 K. The injection results also show a scaling behavior with junction size. Based on the present materials development and device understanding, we consider a current gain of up to 20 at 77 K possibl