Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering

In this paper, we present a mode space method for atomistic non-equilibrium Green's function simulations of armchair graphene nanoribbon FETs that includes electron-phonon scattering. With reference to both conventional and tunnel FET structures, we show that, in the ideal case of a smooth electrostatic potential, the modes can be decoupled in different groups without any loss of accuracy. Thus, inter-subband scattering due to electron-phonon interactions is properly accounted for, while the overall simulation time considerably improves with respect to real-space, with a speed-up factor of 40 for a 1.5-nm-wide device. Such factor increases with the square of the device width. We also discuss the accuracy of two commonly used approximations of the scattering self-energies: the neglect of the off-diagonal entries in the mode-space expressions and the neglect of the Hermitian part of the retarded self-energy. While the latter is an acceptable approximation in most bias conditions, the former is somewhat inaccurate when the device is in the off-state and optical phonon scattering is essential in determining the current via band-to-band tunneling. Finally, we show that, in the presence of a disordered potential, a coupled mode space approach is necessary, but the results are still accurate compared to the real-space solution.Comment: 10 pages, 12 figures. Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physic

Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback

We study a possible circuit solution to overcome the problem of low voltage gain of short-channel graphene FETs. The circuit consists of a fully differential amplifier with a load made of a cross-coupled transistor pair. Starting from the device characteristics obtained from self-consistent ballistic quantum transport simulations, we explore the circuit parameter space and evaluate the amplifier performance in terms of dc voltage gain and voltage gain bandwidth. We show that the dc gain can be effectively improved by the negative differential resistance provided by the cross-coupled pair. Contact resistance is the main obstacle to achieving gain bandwidth products in the terahertz range. Limitations of the proposed amplifier are identified with its poor linearity and relatively large Miller capacitance.Comment: 19 pages, 10 figure

Semianalytical quantum model for graphene field-effect transistors

We develop a semianalytical model for monolayer graphene field-effect transistors in the ballistic limit. Two types of devices are considered: in the first device, the source and drain regions are doped by charge transfer with Schottky contacts, while, in the second device, the source and drain regions are doped electrostatically by a back gate. The model captures two important effects that influence the operation of both devices: (i) the finite density of states in the source and drain regions, which limits the number of states available for transport and can be responsible for negative output differential resistance effects, and (ii) quantum tunneling across the potential steps at the source-channel and drain-channel interfaces. By comparison with a self-consistent non-equilibrium Green's function solver, we show that our model provides very accurate results for both types of devices, in the bias region of quasi-saturation as well as in that of negative differential resistance.Comment: 10 pages, 14 figure

Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation

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3D TCAD modeling of NO2CNT FET sensors

A new approach for TCAD modeling of CNT FET gas sensors is presented, whose key feature is the use of an effective Gaussian DOS to mimic the 1D CNT DOS. The TCAD procedure has been applied to the simulation of a suspended CNT FET for NO2sensing. Our results indicate that the model is able to provide I-V characteristics in excellent agreement with the experimental data, both before and after gas exposure

Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture

In this paper, we present an analysis of the degradation induced by hot-carrier stress in new generation power lateral double-diffused MOS (LDMOS) transistors. Two architectures with the same nominal voltage and comparable performance featuring a selective LOCOS and a shallow-trench isolation are investigated by means of constant voltage stress measurements and TCAD simulations. In particular, the on-resistance degradation in linear regime is experimentally extracted and numerically reproduced under different stress conditions. A similar amount of degradation has been reached by the two architectures, although different physical mechanisms contribute to the creation of the interface states. By using a recently developed physics-based degradation model, it has been possible to distinguish the damage due to collisions of single high-energetic electrons (single-particle events) and the contribution of colder electrons impinging on the silicon/oxide interface (multiple-particle events). A clear dominance of the single-electron collisions has been found in the case of LOCOS structure, whereas the multiple-particle effect plays a clear role in STI-based device at larger gate-voltage stress

Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents

The properties of different molding-compound materials with high filler contents have been investigated in order to assess their electrical properties. The experimental part of the present work has been focused on dielectric spectroscopy and steady-state conduction measurements. The results have been used to investigate the electrical properties of the materials at different frequencies, temperatures and electric fields. Differences in the relaxation kinetics with increasing filler content have been found, which can be ascribed to the larger interface regions between the filler particles. In addition, the extracted conductivities show a hopping transport and different activation energies on the temperature range from 20 °C to 190 °C

Surgical Antimicrobial Prophylaxis in Patients of Neonatal and Pediatric Age Undergoing Orthopedic and Hand Surgery: A RAND/UCLA Appropriateness Method Consensus Study

Surgical site infections (SSIs) represent a potential complication in any type of surgery and can occur up to one year after the procedure in the case of implant placement. In the field of orthopedic and hand surgery, the rate of SSIs is a relevant issue, considering the need for the placement of synthesis devices and the type of some interventions (e.g., exposed fractures). This work aims to provide guidance on the management of peri-operative antibiotic prophylaxis for the pediatric and neonatal population undergoing orthopedic and hand surgery in order to standardize the management of patients and to reduce, on the one hand, the risk of SSI and, on the other, the development of antimicrobial resistance. The following scenarios were considered: (1) bloodless fracture reduction; (2) reduction of unexposed fracture and grade I and II exposed fracture; (3) reduction of grade III exposed fracture or traumatic amputation; (4) cruel fracture reduction with percutaneous synthesis; (5) non-traumatic amputation; (6) emergency intact skin trauma surgery and elective surgery without synthetic media placement; (7) elective orthopedic surgery with prosthetic and/or synthetic media placement and spinal surgery; (8) clean elective hand surgery with and without bone involvement, without use of synthetic means; (9) surgery of the hand on an elective basis with bone involvement and/or with use of synthetic means. This manuscript has been made possible by the multidisciplinary contribution of experts belonging to the most important Italian scientific societies and represents, in our opinion, the most complete and up-to-date collection of recommendations regarding the behavior to be adopted in the peri-operative setting in neonatal and pediatric orthopedic and hand surgery. The specific scenarios developed are aimed at guiding the healthcare professional in practice to ensure the better and standardized management of neonatal and pediatric patients, together with an easy consultation