Josephson Effect in a Coulomb-blockaded SINIS Junction

The problem of Josephson current through Coulomb-blocked nanoscale superconductor-normal-superconductor structure with tunnel contacts is reconsidered. Two different contributions to the phase-biased supercurrent are identified, which are dominant in the limits of weak and strong Coulomb interaction. Full expression for the free energy valid at arbitrary Coulomb strength is found. The current derived from this free energy interpolates between known results for weak and strong Coulomb interaction as phase bias changes from 0 to pi. In the broad range of Coulomb strength the current-phase relation is substantially non-sinusoidal and qualitatively different from the case of semi-ballistic SNS junctions. Coulomb interaction leads to appearance of a local minimum in the current at some intermediate value of phase difference applied to the junction.Comment: 5 pages, 2 EPS figures, JETP Letters style file include

Density of States in a Mesoscopic SNS Junction

Semiclassical theory of proximity effect predicts a gap E_g \sim hD/L^2 in the excitation spectrum of a long diffusive SNS junction. Mesoscopic fluctuations lead to anomalously localized states in the normal part of the junction. As a result, a non-zero, yet exponentially small, density of states appears at energies below E_g. In the framework of the supermatrix nonlinear sigma-model these prelocalized states are due to instanton configurations with broken supersymmetry. The exact result for the DOS near the semiclassical threshold is found provided the dimensionless conductance of the normal part is large. The case of poorly transparent interfaces between the normal and superconductive regions is also considered. In this limit the total number of the subgap states may be large.Comment: 6 pages, 2 eps figures, JETP Letters style file include

Metallic proximity effect in ballistic graphene with resonant scatterers

We study the effect of resonant scatterers on the local density of states in a rectangular graphene setup with metallic leads. We find that the density of states in a vicinity of the Dirac point acquires a strong position dependence due to both metallic proximity effect and impurity scattering. This effect may prevent uniform gating of weakly-doped samples. We also demonstrate that even a single-atom impurity may essentially alter electronic states at low-doping on distances of the order of the sample size from the impurity.Comment: 9 pages, 2 figure

Correlations of the local density of states in quasi-one-dimensional wires

We report a calculation of the correlation function of the local density of states in a disordered quasi-one-dimensional wire in the unitary symmetry class at a small energy difference. Using an expression from the supersymmetric sigma-model, we obtain the full dependence of the two-point correlation function on the distance between the points. In the limit of zero energy difference, our calculation reproduces the statistics of a single localized wave function. At logarithmically large distances of the order of the Mott scale, we obtain a reentrant behavior similar to that in strictly one-dimensional chains.Comment: Published version. Minor technical and notational improvements. 16 pages, 1 figur

Scale-dependent correction to the dynamical conductivity of a disordered system at unitary symmetry

Anderson localization has been studied extensively for more than half a century. However, while our understanding has been greatly enhanced by calculations based on a small epsilon expansion in d = 2 + epsilon dimensions in the framework of non-linear sigma models, those results can not be safely extrapolated to d = 3. Here we calculate the leading scale-dependent correction to the frequency-dependent conductivity sigma(omega) in dimensions d <= 3. At d = 3 we find a leading correction Re{sigma(omega)} ~ |omega|, which at low frequency is much larger than the omega^2 correction deriving from the Drude law. We also determine the leading correction to the renormalization group beta-function in the metallic phase at d = 3.Comment: 5 pages, 3 figure

Interaction-induced criticality in Z_2 topological insulators

Critical phenomena and quantum phase transitions are paradigmatic concepts in modern condensed matter physics. A central example in the field of mesoscopic physics is the localization-delocalization (metal-insulator) quantum phase transition driven by disorder -- the Anderson transition. Although the notion of localization has appeared half a century ago, this field is still full of surprising new developments. The most recent arenas where novel peculiar localization phenomena have been studied are graphene and topological insulators, i.e., bulk insulators with delocalized (topologically protected) states on their surface. Besides exciting physical properties, the topological protection renders such systems promising candidates for a variety of prospective electronic and spintronic devices. It is thus of crucial importance to understand properties of boundary metallic modes in the realistic systems when both disorder and interaction are present. Here we find a novel critical state which emerges in the bulk of two-dimensional quantum spin Hall (QSH) systems and on the surface of three-dimensional topological insulators with strong spin-orbit interaction due to the interplay of nontrivial Z_2 topology and the Coulomb repulsion. At low temperatures, this state possesses a universal value of electrical conductivity. In particular, we predict that the direct QSH phase transition occurs via this novel state. Remarkably, the interaction-induced critical state emerges on the surface of a three-dimensional topological insulator without any adjustable parameters. This ``self-organized quantum criticality'' is a novel concept in the field of interacting disordered systems.Comment: 7 pages, 3 figure

Conductivity of disordered graphene at half filling

We study electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder at half filling. We show that the transport properties of the system depend strongly on the symmetry of disorder. We find that the localization is ineffective if the randomness preserves one of the chiral symmetries of the clean Hamiltonian or does not mix valleys. We obtain the exact value of minimal conductivity $4e^2/\pi h$ in the case of chiral disorder. For long-range disorder (decoupled valleys), we derive the effective field theory. In the case of smooth random potential, it is a symplectic-class sigma model including a topological term with $\theta = \pi$. As a consequence, the system is at a quantum critical point with a universal value of the conductivity of the order of $e^2/h$. When the effective time reversal symmetry is broken, the symmetry class becomes unitary, and the conductivity acquires the value characteristic for the quantum Hall transition.Comment: 11 pages, 2 EPS figures; Proceedings of Graphene Conference, MPIPKS Dresden 200