High-Speed Modulation of Polarized Thermal Radiation from an On-Chip Aligned Carbon Nanotube Film

Spectroscopic analysis with polarized light has been widely used to investigate molecular structure and material behavior. A broadband polarized light source that can be switched on and off at a high speed is indispensable for reading faint signals, but such a source has not been developed. Here, using aligned carbon nanotube (CNT) films, we have developed broadband thermal emitters of polarized infrared radiation with switching speeds of ≲20 MHz. We found that the switching speed depends on whether the electrical current is parallel or perpendicular to the CNT alignment direction with a significantly higher speed achieved in the parallel case. Together with detailed theoretical simulations, our experimental results demonstrate that the contact thermal conductance to the substrate and the conductance to the electrodes are important factors that determine the switching speed. These emitters can lead to advanced spectroscopic analysis techniques with polarized radiation

Giant Terahertz Polarization Rotation in Ultrathin Films of Aligned Carbon Nanotubes

For facile manipulation of polarization states of light for applications in communications, imaging, and information processing, an efficient mechanism is desired for rotating light polarization with a minimum interaction length. Here, we report giant polarization rotations for terahertz (THz) electromagnetic waves in ultrathin (~45 nm), high-density films of aligned carbon nanotubes. We observed polarization rotations of up to ~20{\deg} and ~110{\deg} for transmitted and reflected THz pulses, respectively. The amount of polarization rotation was a sensitive function of the angle between the incident THz polarization and the nanotube alignment direction, exhibiting a `magic' angle at which the total rotation through transmission and reflection becomes exactly 90{\deg}. Our model quantitatively explains these giant rotations as a result of extremely anisotropic optical constants, demonstrating that aligned carbon nanotubes promise ultrathin, broadband, and tunable THz polarization devices

Electrical Generation of Polarized Broadband Radiation from an On-Chip Aligned Carbon Nanotube Film

Microsized light sources with polarized or broadband emission can be used for a variety of applications. However, the system directly generating polarized and broad-spectrum light without using polarizers has not been established. Here, we found that a nano-device of densely packed and highly aligned carbon nanotube (CNT) films on silicon chips can emit polarized light with a broad spectrum. We observed spatial emission patterns that are dependent on the angle between the electrical bias and the CNT alignment direction, which are caused not only by the large thermal conductivity anisotropy of the film but also by finite thermal conductance in the CNT-electrode contact. Utilizing the thermal and electrical anisotropy, strongly localized emission was achieved from a narrow (∼1 μm) strip of aligned CNTs connecting edges of two displaced electrodes. This device’s unique ability to directly generate polarized ultrabroadband radiation may greatly expand the range of applications of microsized light sources

Solving the Thermoelectric Trade-Off Problem with Metallic Carbon Nanotubes

Semiconductors are generally considered far superior to metals as thermoelectric materials because of their much larger Seebeck coefficients (S). However, a maximum value of S in a semiconductor is normally accompanied by a minuscule electrical conductivity (σ), and hence, the thermoelectric power factor (P = S2σ) remains small. An attempt to increase σ by increasing the Fermi energy (EF), on the other hand, decreases S. This trade-off between S and σ is a well-known dilemma in developing high-performance thermoelectric devices based on semiconductors. Here, we show that the use of metallic carbon nanotubes (CNTs) with tunable EF solves this long-standing problem, demonstrating a higher thermoelectric performance than semiconducting CNTs. We studied the EF dependence of S, σ, and P in a series of CNT films with systematically varied metallic CNT contents. In purely metallic CNT films, both S and σ monotonically increased with EF, continuously boosting P while increasing EF. Particularly, in an aligned metallic CNT film, the maximum of P was ∼5 times larger than that in the highest-purity (>99%) single-chirality semiconducting CNT film. We attribute these superior thermoelectric properties of metallic CNTs to the simultaneously enhanced S and σ of one-dimensional conduction electrons near the first van Hove singularity

Transition from Diffusive to Superdiffusive Transport in Carbon Nanotube Networks via Nematic Order Control

The one-dimensional confinement of quasiparticles in individual carbon nanotubes (CNTs) leads to extremely anisotropic electronic and optical properties. In a macroscopic ensemble of randomly oriented CNTs, this anisotropy disappears together with other properties that make them attractive for certain device applications. The question however remains if not only anisotropy but also other types of behaviors are suppressed by disorder. Here, we compare the dynamics of quasiparticles under strong electric fields in aligned and random CNT networks using a combination of terahertz emission and photocurrent experiments and out-of-equilibrium numerical simulations. We find that the degree of alignment strongly influences the excited quasiparticles’ dynamics, rerouting the thermalization pathways. This is, in particular, evidenced in the high-energy, high-momentum electronic population (probed through the formation of low energy excitons via exciton impact ionization) and the transport regime evolving from diffusive to superdiffusive

Terahertz Excitonics in Carbon Nanotubes: Exciton Autoionization and Multiplication

Excitons play major roles in optical processes in modern semiconductors, such as single-wall carbon nanotubes (CNTs), transition metal dichalcogenides, and 2D perovskite quantum wells. They possess extremely large binding energies (>100 meV), dominating absorption and emission spectra even at high temperatures. The large binding energies imply that they are stable, that is, hard to ionize, rendering them seemingly unsuited for optoelectronic devices that require mobile charge carriers, especially terahertz emitters and solar cells. Here, we have conducted terahertz emission and photocurrent studies on films of aligned single-chirality semiconducting CNTs and find that excitons autoionize, i.e., spontaneously dissociate into electrons and holes. This process naturally occurs ultrafast (<1 ps) while conserving energy and momentum. The created carriers can then be accelerated to emit a burst of terahertz radiation when a dc bias is applied, with promising efficiency in comparison to standard GaAs-based emitters. Furthermore, at high bias, the accelerated carriers acquire high enough kinetic energy to create secondary excitons through impact exciton generation, again in a fully energy and momentum conserving fashion. This exciton multiplication process leads to a nonlinear photocurrent increase as a function of bias. Our theoretical simulations based on nonequilibrium Boltzmann transport equations, taking into account all possible scattering pathways and a realistic band structure, reproduce all of our experimental data semiquantitatively. These results not only elucidate the momentum-dependent ultrafast dynamics of excitons and carriers in CNTs but also suggest promising routes toward terahertz excitonics despite the orders-of-magnitude mismatch between the exciton binding energies and the terahertz photon energies