7 research outputs found
Iodine Anions beyond â1: Formation of Li<sub><i>n</i></sub>I (<i>n</i> = 2â5) and Its Interaction with Quasiatoms
Novel phases of Li<sub><i>n</i></sub>I (<i>n</i> = 2, 3, 4, 5) compounds are predicted
to form under high pressure
using first-principles density functional theory and an unbiased crystal
structure search algorithm. All of the phases identified are thermodynamically
stable with respect to decomposition into elemental Li and the binary
LiI at a relatively low pressure (â20 GPa). Increasing the
pressure to 100 GPa yields the formation of a high pressure electride
where electrons occupy interstitial quasiatom (ISQ) orbitals. Under
these extreme pressures, the calculated charge on iodine suggests
the oxidation state goes beyond the conventional and expected â1
charge for the halogens. This strange oxidative behavior stems from
an electron transfer going from the ISQ to I<sup>â</sup> and
Li<sup>+</sup> ions as high pressure collapses the void space. The
resulting interplay between chemical bonding and the quantum chemical
nature of enclosed interstitial space allows this first report of
a halogen anion beyond a â1 oxidation state
Nitrophosphorene: A 2D Semiconductor with Both Large Direct Gap and Superior Mobility
A new
two-dimensional phosphorus nitride monolayer (<i>P</i>2<sub>1</sub>/<i>c</i>-PN) with distinct structural and
electronic properties is predicted based on first-principle calculations.
Unlike pristine single-atom group V monolayers such as nitrogene,
phosphorene, arsenene, and antimonene, <i>P</i>2<sub>1</sub>/<i>c</i>-PN has an intrinsic direct band gap of 2.77 eV
that is very robust against the strains. Strikingly, <i>P</i>2<sub>1</sub>/<i>c</i>-PN shows excellent anisotropic carrier
mobility up to 290âŻ829.81 cm<sup>2</sup> V<sup>â1</sup> s<sup>â1</sup> along the <i>a</i> direction, which
is about 18 times that in monolayer black phosphorus. This put <i>P</i>2<sub>1</sub>/<i>c</i>-PN way above the general
relation that carrier mobility is inversely proportional to bandgap,
making it a very unique two-dimensional material for nanoelectronics
devices
Unexpected Trend in Stability of XeâF Compounds under Pressure Driven by XeâXe Covalent Bonds
Xenon difluoride
is the first and the most stable of hundreds of
noble-gas (Ng) compounds. These compounds reveal the rich chemistry
of Ngâs. No stable compound that contains a NgâNg bond
has been reported previously. Recent experiments have shown intriguing
behaviors of this exemplar compound under high pressure, including
increased coordination numbers and an insulator-to-metal transition.
None of the behaviors can be explained by electronic-structure calculations
with fixed stoichiometry. We therefore conducted a structure search
of xenonâfluorine compounds with various stoichiometries and
studied their stabilities under pressure using first-principles calculations.
Our results revealed, unexpectedly, that pressure stabilizes xenonâfluorine
compounds selectively, including xenon tetrafluoride, xenon hexafluoride,
and the xenon-rich compound Xe<sub>2</sub>F. Xenon difluoride becomes
unstable above 81 GPa and yields metallic products. These compounds
contain xenonâxenon covalent bonds and may form intercalated
graphitic xenon lattices, which stabilize xenon-rich compounds and
promote the decomposition of xenon difluoride
Predicted LithiumâBoron Compounds under High Pressure
High pressure can fundamentally alter the bonding patterns
of light
elements and their compounds, leading to the unexpected formation
of materials with unusual chemical and physical properties. Using
an unbiased structure search method based on particle-swarm optimization
algorithms in combination with density functional theory calculations,
we investigate the phase stabilities and structural changes of various
LiâB systems on the Li-rich regime under high pressures. We
identify the formation of four stoichiometric lithium borides (Li<sub>3</sub>B<sub>2</sub>, Li<sub>2</sub>B, Li<sub>4</sub>B, and Li<sub>6</sub>B) having unforeseen structural features that might be experimentally
synthesizable over a wide range of pressures. Strikingly, it is found
that the BâB bonding patterns of these lithium borides evolve
from graphite-like sheets in turn to zigzag chains, dimers, and eventually
isolated B ions with increasing Li content. These intriguing BâB
bonding features are chemically rationalized by the elevated B anionic
charges as a result of LiâB charge transfer
On the Stereochemical Inertness of the Auride Lone Pair: Ab Initio Studies of AAu (A = K, Rb, Cs)
The âloneâ 6s electron
pair often plays a key role in determining the structure and physical
properties of compounds containing sixth-row elements in their lower
oxidation states: Tl<sup>+</sup>, Pb<sup>2+</sup>, and Bi<sup>3+</sup> with the [Xe]Â4f<sup>14</sup>5d<sup>10</sup>6s<sup>2</sup> electronic
configuration. The lone pairs on these ions are associated with reduced
structural symmetries, including ferroelectric instabilities and other
important phenomena. Here we consider the isoelectronic auride Au<sup>â</sup> ion with the [Xe]Â4f<sup>14</sup>5d<sup>10</sup>6s<sup>2</sup> electronic configuration. Ab initio density functional theory
methods are employed to probe the effect of the 6s lone pair in alkali-metal
aurides (KAu, RbAu, and CsAu) with the CsCl structure. The dielectric
constants, Born effective charges, and structural instabilities suggest
that the 6s lone pair on the Au<sup>â</sup> anion is stereochemically
inert to minor mechanical and electrical perturbation. Pressures greater
than 14 GPa, however, lead to reorganization of the electronic structure
of CsAu and activate lone-pair involvement and AuâAu interactions
in bonding, resulting in a transformation from the cubic CsCl structure
type to an orthorhombic <i>Cmcm</i> structure featuring
zigzag AuâAu chains
<i>N</i>âAlkyldinaphthocarbazoles, Azaheptacenes, for Solution-Processed Organic Field-Effect Transistors
Substituted <i>N</i>-alkyldinaphthocarbazoles
were synthesized
using a key double DielsâAlder reaction. The angular nature
of the dinaphthocarbazole system allows for increased stability of
the conjugated system relative to linear analogues. The <i>N</i>-alkyldinaphthocarbazoles were characterized by UVâvis absorption
and fluorescence spectroscopy as well as cyclic voltammetry. X-ray
structure analysis based on synchrotron X-ray powder diffraction revealed
that the <i>N</i>-dodecyl-substituted compound was oriented
in an intimate herringbone packing motif, which allowed for p-type
mobilities of 0.055 cm<sup>2</sup> V<sup>â1</sup> s<sup>â1</sup> from solution-processed organic field-effect transistors
<i>N</i>âAlkyldinaphthocarbazoles, Azaheptacenes, for Solution-Processed Organic Field-Effect Transistors
Substituted <i>N</i>-alkyldinaphthocarbazoles
were synthesized
using a key double DielsâAlder reaction. The angular nature
of the dinaphthocarbazole system allows for increased stability of
the conjugated system relative to linear analogues. The <i>N</i>-alkyldinaphthocarbazoles were characterized by UVâvis absorption
and fluorescence spectroscopy as well as cyclic voltammetry. X-ray
structure analysis based on synchrotron X-ray powder diffraction revealed
that the <i>N</i>-dodecyl-substituted compound was oriented
in an intimate herringbone packing motif, which allowed for p-type
mobilities of 0.055 cm<sup>2</sup> V<sup>â1</sup> s<sup>â1</sup> from solution-processed organic field-effect transistors