25 research outputs found
Partial and macroscopic phase coherences in underdoped BiSrCaCuO thin film
A combined study with use of time-domain pump-probe spectroscopy and
time-domain terahertz transmission spectroscopy have been carried out on an
underdoped BiSrCaCuO thin film. It was observed that
the low energy multi-excitation states were decomposed into superconducting gap
and pseudogap. The pseudogap locally opens below K
simultaneously with the appearance of the high-frequency partial pairs around
1.3 THz. With decreasing temperature, the number of the local domains with the
partial phase coherence increased and saturated near 100 K, and the macroscopic
superconductivity appeared below 76 K through the superconductivity fluctuation
state below 100 K. These experimental results indicate that the pseudogap makes
an important role for realization of the superconductivity as a precursor to
switch from the partial to the macroscopic phase coherence.Comment: Revtex4, 4 pages, 4 figure
Analysis of response mechanism of a proton-pumping gate FET hydrogen gas sensor in air
Two different types of hydrogen response signals (DC and AC) of a proton-pumping gate FET with triple layer gate structure (Pd/proton conducting polymer/Pt) were obtained. The proton-pumping gate FET showed good selectivity against other gases (CH4, C2H6, NH3, and O2). For practical use, the hydrogen response characteristics of the proton-pumping gate FET were investigated in air (a gaseous mixture of oxygen and nitrogen). The proton-pumping gate FET showed different hydrogen response characteristics in nitrogen as well as in air, despite the lack of oxygen interference independently. To clarify the response mechanism of the proton-pumping gate FET, a hydrogen response measurement was performed, using a gas flow system and electrochemical impedance spectroscopy. Consequently, the difference in response between nitrogen and air was found to be due to the hydrogen dissociation reaction and the interference with the proton transfer caused by the adsorbed oxygen on the upper Pd gate electrode</p