156 research outputs found
Bilayer Phosphorene: Effect of Stacking Order on Bandgap and Its Potential Applications in Thin-Film Solar Cells
Phosphorene, a monolayer
of black phosphorus, is promising for
nanoelectronic applications not only because it is a natural p-type
semiconductor but also because it possesses a layer-number-dependent
direct bandgap (in the range of 0.3 to 1.5 eV). On basis of the density
functional theory calculations, we investigate electronic properties
of the bilayer phosphorene with different stacking orders. We find
that the direct bandgap of the bilayers can vary from 0.78 to 1.04
eV with three different stacking orders. In addition, a vertical electric
field can further reduce the bandgap to 0.56 eV (at the field strength
0.5 V/Å). More importantly, we find that when a monolayer of
MoS<sub>2</sub> is superimposed with the p-type AA- or AB-stacked
bilayer phosphorene, the combined trilayer can be an effective solar-cell
material with type-II heterojunction alignment. The power conversion
efficiency is predicted to be ∼18 or 16% with AA- or AB-stacked
bilayer phosphorene, higher than reported efficiencies of the state-of-the-art
trilayer graphene/transition metal dichalcogenide solar cells
Electron-Transport Properties of Few-Layer Black Phosphorus
We
perform the first-principles computational study of the effect
of number of stacking layers and stacking style of the few-layer black
phosphorus (BPs) on the electronic properties, including transport
gap, current–voltage (<i>i</i>–<i>v</i>) relation, and differential conductance. Our computation is based
on the nonequilibrium Green’s function approach combined with
density functional theory calculations. Specifically, we compute electron-transport
properties of monolayer BP, bilayer BP, and trilayer BP as well as
bilayer BPs with AB-, AA-, or AC-stacking. We find that the stacking
number has greater influence on the transport gap than the stacking
type. Conversely, the stacking type has greater influence on <i>i</i>–<i>v</i> curve and differential conductance
than on the transport gap. This study offers useful guidance for determining
the number of stacking layers and the stacking style of few-layer
BP sheets in future experimental measurements and for potential applications
in nanoelectronic devices
Fluorescence of A100 MOF and Adsorption of Water, Indole, and Naphthalene on A100 by the Spectroscopic, Kinetic, and DFT Studies
Metal–organic
frameworks (MOFs) are promising materials
for adsorption and separations. It is important to understand the
details of chemical bonding between the adsorbate and structural units
in the MOFs. In A100 MOF, the near-UV–visible fluorescence
is found to be the intralinker fluorescence. Naphthalene and indole
form the stoichiometric “host-guest” π–π
adsorption complexes with A100 that contain one adsorbate molecule
per two BDC linkers, and adsorption of indole causes a strong quenching
of the intralinker fluorescence. The excitation wavelength dependent
steady-state fluorescence spectra, the nanosecond time-resolved fluorescence
spectra, and DFT calculations indicate the strong π–π
interactions between adsorbed indole and naphthalene and aromatic
ring of the BDC linker, as well as hydrogen bonding between adsorbed
indole and COO group of the linker. Activated A100 adsorbs up to four
water molecules per BDC linker. Kinetic study of adsorption of naphthalene
and indole from <i>n</i>-alkane on hydrated A100 yields
the preferential adsorption of indole as determined by the in-situ
time-dependent fluorescence spectroscopy and complementary ex-situ
UV–vis absorption spectroscopy
Al<sub>2</sub>C Monolayer Sheet and Nanoribbons with Unique Direction-Dependent Acoustic-Phonon-Limited Carrier Mobility and Carrier Polarity
The intrinsic acoustic-phonon-limited
carrier mobility (μ)
of Al<sub>2</sub>C monolayer sheet and nanoribbons are investigated
using ab initio computation and deformation potential theory. It is
found that the polarity of the room-temperature carrier mobility of
the Al<sub>2</sub>C monolayer is direction-dependent, with μ
of electron (<i>e</i>) and hole (<i>h</i>) being
2348 and 40.77 cm<sup>2</sup>/V/s, respectively, in the armchair direction
and 59.95 (<i>e</i>) and 705.8 (<i>h</i>) in the
zigzag direction. More interestingly, one-dimensional Al<sub>2</sub>C nanoribbons not only can retain the direction-dependent polarity
but also may entail even higher mobility, in contrast to either the
graphene nanoribbons which tend to exhibit lower μ compared
to the two-dimensional graphene or the MoS<sub>2</sub> nanoribbons
which have reversed polarity compared to the MoS<sub>2</sub> sheet.
As an example, the Al-terminated zigzag nanoribbon with a width of
4.1 nm exhibits μ of 212.6 (<i>e</i>) and 2087 (<i>h</i>) cm<sup>2</sup>/V/s, while the C-terminated armchair nanoribbon
with a width 2.6 nm exhibits μ of 1090 (<i>e</i>)
and 673.9 (<i>h</i>) cm<sup>2</sup>/V/s; the C-terminated
zigzag nanoribbon with a width 3.7 nm exhibits μ of 177.6 (<i>e</i>) and 1889 (<i>h</i>) cm<sup>2</sup>/V/s, and
the Al-terminated armchair nanoribbon with a width 2.4 nm exhibits
μ of 6695 (<i>e</i>) and 518.4 (<i>h</i>) cm<sup>2</sup>/V/s. The high carrier mobility, μ, coupled
with polarity and direction dependence endows the Al<sub>2</sub>C
sheet and nanoribbons with unique transport properties that can be
exploited for special applications in nanoelectronics
Porous Boron Nitride with Tunable Pore Size
On the basis of a global structural
search and first-principles
calculations, we predict two types of porous boron-nitride (BN) networks
that can be built up with zigzag BN nanoribbons (BNNRs). The BNNRs
are either directly connected with puckered B (N) atoms at the edge
(type I) or connected with sp<sup>3</sup>-bonded BN chains (type II).
Besides mechanical stability, these materials are predicted to be
thermally stable at 1000 K. The porous BN materials entail large surface
areas, ranging from 2800 to 4800 m<sup>2</sup>/g. In particular, type-II
BN material with relatively large pores is highly favorable for hydrogen
storage because the computed hydrogen adsorption energy (−0.18
eV) is very close to the optimal adsorption energy (−0.15 eV)
suggested for reversible hydrogen storage at room temperature. Moreover,
the type-II materials are semiconductors with width-dependent direct
bandgaps, rendering the type-II BN materials promising not only for
hydrogen storage but also for optoelectronic and photonic applications
Efficient Visible-Light-Driven Photocatalytic Degradation with Bi<sub>2</sub>O<sub>3</sub> Coupling Silica Doped TiO<sub>2</sub>
A new
TiO<sub>2</sub>-based visible light photocatalyst (Bi<sub>2</sub>O<sub>3</sub>/Si–TiO<sub>2</sub>) was synthesized by
both Bi<sub>2</sub>O<sub>3</sub> coupling and Si doping via a two-step
method. The structural, morphological, light absorption, and photocatalytic
properties of as-prepared samples were studied using various spectroscopic
and analytical techniques. The results showed that Bi<sub>2</sub>O<sub>3</sub>/Si–TiO<sub>2</sub> catalysts held an anatase phase
and possessed high thermal stability. The doped Si was woven into
the lattice of TiO<sub>2</sub>, and its content had a significant
effect on the surface area and the crystal size of Bi<sub>2</sub>O<sub>3</sub>/Si–TiO<sub>2</sub>. The introduced Bi species mainly
existed as oxides on the surface of TiO<sub>2</sub> particles, and
the Bi<sub>2</sub>O<sub>3</sub> photosensitization extended the light
absorption into the visible region. Bi<sub>2</sub>O<sub>3</sub> coupling
also favored the separation and transfer of photoinduced charge carriers
to inhibit their recombination and Si doping enlarged the surface
area of photocatalysts. Compared to bare TiO<sub>2</sub>, Bi<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>, and Si–TiO<sub>2</sub>, Bi<sub>2</sub>O<sub>3</sub>/Si–TiO<sub>2</sub> samples showed better
activities for the degradation of methyl orange (MO) and bisphenol
A (BPA) under visible light irradiation (λ > 420 nm). The
highest
activity was observed for 1.0% Bi<sub>2</sub>O<sub>3</sub>/15% Si–TiO<sub>2</sub> calcined at 500 °C. The superior performance was ascribed
to the high surface area, the ability to absorb visible light, and
the efficient charge separation associated with the synergetic effects
of appropriate amounts of Si and Bi in the prepared samples. The adsorbed
hydroxyl radicals (<sup>•</sup>OH) were also found to be the
most reactive species in the photocatalytic degradation
Bi(Sb)NCa<sub>3</sub>: Expansion of Perovskite Photovoltaics into All-Inorganic Anti-Perovskite Materials
Perovskite photovoltaics (PVs) have
attracted intense interest
largely because of their high power conversion efficiency and low
cost. The chemical structures of perovskite materials can be generally
described by the formula of ABX3, where cations occupy
“A” and “B” sites and anions occupy “X”
sites. Herein, we present a comprehensive theoretical study of two
inorganic anti-perovskite materials, namely, BiNCa3 and
SbNCa3, for perovskite PVs. Note that in anti-perovskites,
anions occupy “A” and “B” sites, whereas
cations occupy “X” sites. Specifically, for both materials,
we investigate their thermodynamic stability, dynamic stability, optoelectronic
properties and defect properties through ab initio calculations. Our
computation suggests that both BiNCa3 and SbNCa3 possess direct band gaps of 0.65 and 1.14 eV, respectively. Notably,
both materials are predicted to be thermodynamically stable, as demonstrated
by their relatively large stable region based on the phase stability
analysis. Dynamic and thermal stabilities are also suggested via the
computed phonon spectra and ab initio molecular dynamics simulation.
Furthermore, both materials possess desired optical absorption coefficients
in the visible light region, comparable to that of the prevailing
organic–inorganic hybrid perovskite, MAPbI3. Both
exhibit enhanced optical absorption in the infrared region and have
good defect tolerance. Lastly, good n-type and p-type conductivity
may be realized by controlling the growth condition. The combined
desirable properties render both BiNCa3 and SbNCa3 as promising all-inorganic and lead-free optical absorbers for PV
application
Edge-Modified Phosphorene Nanoflake Heterojunctions as Highly Efficient Solar Cells
We propose to use edge-modified phosphorene
nanoflakes (PNFs) as donor and acceptor materials for heterojunction
solar cells. By using density functional theory based calculations,
we show that heterojunctions consisting of hydrogen- and fluorine-passivated
PNFs have a number of desired optoelectronic properties that are suitable
for use in a solar cell. We explain why these properties hold for
these types of heterojunctions. Our calculations also predict that
the maximum energy conversion efficiency of these type of heterojunctions,
which can be easily fabricated, can be as high as 20%, making them
extremely competitive with other types of two-dimensional heterojunctions
Unusual Metallic Microporous Boron Nitride Networks
Two metallic zeolite-like microporous
BN crystals with all-sp<sup>2</sup> bonding networks are predicted
from an unbiased structure
search based on the particle-swarm optimization (PSO) algorithm in
combination with first-principles density functional theory (DFT)
calculations. The stabilities of both microporous structures are confirmed
via the phonon spectrum analysis and Born–Oppenheimer molecular
dynamics simulations with temperature control at 1000 K. The unusual
metallicity for the microporous BN allotropes stems from the delocalized
p electrons along the axial direction of the micropores. Both microporous
BN structures entail large surface areas, ranging from 3200 to 3400
m<sup>2</sup>/g. Moreover, the microporous BN structures show a preference
toward organic molecule adsorption (e.g., the computed adsorption
energy for CH<sub>3</sub>CH<sub>2</sub>OH is much more negative than
that of H<sub>2</sub>O). This preferential adsorption can be exploited
for water cleaning, as demonstrated recently using porous boron BN
nanosheets (Nat. Commun. 2013, 4, 1777)
Ultrafast Solid-State Transformation Pathway from New-Phased Goethite VOOH to Paramontroseite VO<sub>2</sub> to Rutile VO<sub>2</sub>(R)
Monoclinic vanadium dioxides VO2(M) is prototype material for interpreting correlation effects in solids, and its fully reversible metal−insulator transition (MIT) also brings the great interest in construction of intelligent devices such as temperature sensors and energy-efficient smart windows. The solid-state transformation started from vanadium precursors has been long-term regarded as the classic effective route to rutile VO2(R), while the conventional vanadium precursors usually requires indispensable atomic lattice rearrangement and reshuffling to realize rutile VO2(R) phase, leading to strict experimental conditions, high cost, and long conversion time (even more than one day) during the VO2(R) formation process. Herein, under the theoretical guidance of atomically structural analysis, a new structure-conversion pathway from goethite VOOH to paramontroseite VO2 to rutile VO2(R) realized an alternative ultrafast transformation into desired monoclinic VO2(M), of which each two steps only requires within 60 s. Thanks to the discovered new-phased goethite VOOH, the well-crystalline synthetic paramontroseite VO2 was realized from the chemically synthetic way, and in effect the paramontroseite structure plays the decisive role in achieving the desired monoclinic VO2(M) from the structural viewpoint, which would further promote this expensive material into the realm of conventional laboratory synthesis. The realized monoclinic VO2(M) exhibits the smart switching properties in regulating thermal, magnetic, and near IR light behaviors, and more importantly the metal−insulator transition (MIT) parameters such as the MIT temperature and the width of heating−cooling hysteresis are now precisely controlled. These intriguing findings may pave new way for designing other functional solid materials with correlation effects and then providing the material guarantee for constructing the intelligent devices in future
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