Highly Conductive Freestanding Graphene Films as Anode Current Collectors for Flexible Lithium-Ion Batteries

The electrodes in lithium-ion batteries (LIBs) are typically films that are arranged on metal foil current collectors with a thickness of several tens of μm. Here, we report on the preparation of a thick free-standing graphene film synthesized by CVD as an alternative to Cu foil as an anode current collector. As a model system, MoS₂ anodes with a flower-like morphology were anchored onto the surface of the thick graphene film. A hybrid and binder free anode without a conventional metal current collector exhibited an excellent capacity value of around 580 mAh/g (@50 mA/g) and reasonable charge/discharge cyclability. The work presented here may stimulate the use of graphene films as replacements for conventional current collectors and additive free electrode in LIBs

Graphene-Based Three-Dimensional Capacitive Touch Sensor for Wearable Electronics

The development of input device technology in a conformal and stretchable format is important for the advancement of various wearable electronics. Herein, we report a capacitive touch sensor with good sensing capabilities in both contact and noncontact modes, enabled by the use of graphene and a thin device geometry. This device can be integrated with highly deformable areas of the human body, such as the forearms and palms. This touch sensor detects multiple touch signals in acute recordings and recognizes the distance and shape of the approaching objects before direct contact is made. This technology offers a convenient and immersive human–machine interface and additional potential utility as a multifunctional sensor for emerging wearable electronics and robotics

Graphene-Based Three-Dimensional Capacitive Touch Sensor for Wearable Electronics

The development of input device technology in a conformal and stretchable format is important for the advancement of various wearable electronics. Herein, we report a capacitive touch sensor with good sensing capabilities in both contact and noncontact modes, enabled by the use of graphene and a thin device geometry. This device can be integrated with highly deformable areas of the human body, such as the forearms and palms. This touch sensor detects multiple touch signals in acute recordings and recognizes the distance and shape of the approaching objects before direct contact is made. This technology offers a convenient and immersive human–machine interface and additional potential utility as a multifunctional sensor for emerging wearable electronics and robotics

Graphene-Based Three-Dimensional Capacitive Touch Sensor for Wearable Electronics

The development of input device technology in a conformal and stretchable format is important for the advancement of various wearable electronics. Herein, we report a capacitive touch sensor with good sensing capabilities in both contact and noncontact modes, enabled by the use of graphene and a thin device geometry. This device can be integrated with highly deformable areas of the human body, such as the forearms and palms. This touch sensor detects multiple touch signals in acute recordings and recognizes the distance and shape of the approaching objects before direct contact is made. This technology offers a convenient and immersive human–machine interface and additional potential utility as a multifunctional sensor for emerging wearable electronics and robotics

Graphene-Based Conformal Devices

Despite recent progress in bendable and stretchable thin-film transistors using novel designs and materials, the development of conformal devices remains limited by the insufficient flexibility of devices. Here, we demonstrate the fabrication of graphene-based conformal and stretchable devices such as transistor and tactile sensor on a substrate with a convoluted surface by scaling down the device thickness. The 70 nm thick graphene-based conformal devices displayed a much lower bending stiffness than reported previously. The demonstrated devices provided excellent conformal coverage over an uneven animal hide surface without the need for an adhesive. In addition, the ultrathin graphene devices formed on the three-dimensionally curved animal hide exhibited stable electrical characteristics, even under repetitive bending and twisting. The advanced performance and flexibility demonstrated here show promise for the development and adoption of wearable electronics in a wide range of future applications

Effect of PEDOT Nanofibril Networks on the Conductivity, Flexibility, and Coatability of PEDOT:PSS Films

The use of poly­(3,4-ethylenedioxythiophene):poly­(styrenesulfonate) (PEDOT:PSS) in electrodes and electrical circuits presents a number of challenges that are yet to be overcome, foremost amongst which are its relatively low conductivity, low coatability on hydrophobic substrates, and decreased conductivity at large strains. With this in mind, this study suggests a simple way to simultaneously address all of these issues through the addition of a small amount of a nonionic surfactant (Triton X-100) to commercial PEDOT:PSS solutions. This surfactant is shown to considerably reduce the surface tension of the PEDOT:PSS solution, thus permitting conformal coatings of PEDOT:PSS thin film on a diverse range of hydrophobic substrates. Furthermore, this surfactant induces the formation of PEDOT nanofibrils during coating, which led to the high conductivity values and mechanical stability at large strains (ε = 10.3%). Taking advantage of the superior characteristics of these PEDOT:PSS thin films, a highly flexible polymer solar cell was fabricated. The power conversion efficiency of this solar cell (3.14% at zero strain) was preserved at large strains (ε =7.0%)

Three-Dimensional Writing of Highly Stretchable Organic Nanowires

Three-dimensional (3D) writing is a promising approach to realize stretchable electronics, but is so far limited to microscale features. We developed accurate 3D writing for highly stretchable organic nanowire arrays using a nanoscale polymer meniscus. Specifically, 3D nanoarches of poly­(3,4-ethylenedioxythiophene)/poly­(styrenesulfonate) with unprecedented stretchability, over 270%, and no compromise on the electrical characteristics were fabricated. Then, we integrated nanoarches into photoswitches, electrochemical transistors, and electrical interconnects. The impact of these successful tests goes well beyond these specific devices and opens the way to new classes of stretchable nanodevices based on organic materials

Observation of the Inverse Giant Piezoresistance Effect in Silicon Nanomembranes Probed by Ultrafast Terahertz Spectroscopy

The anomalous piezoresistance (a-PZR) effects, including giant PZR (GPZR) with large magnitude and inverse PZR of opposite, have exciting technological potentials for their integration into novel nanoelectromechanical systems. However, the nature of a-PZR effect and the associated kinetics have not been clearly determined yet. Even further, there are intense research debates whether the a-PZR effect actually exists or not; although numerous investigations have been conducted, the origin of the effect has not been clearly understood. This paper shows the existence of a-PZR and provides direct experimental evidence through the performance of well-established electrical measurements and terahertz spectroscopy on silicon nanomembranes (Si NMs). The clear inverse PZR behavior was observed in the Si NMs when the thickness was less than 40 nm and the magnitude of the PZR response linearly increased with the decreasing thickness. Observations combined with electrical and optical measurements strongly corroborate that the a-PZR effect originates from the carrier concentration changes via charge carrier trapping into strain-induced defect states

Reduced Defect Density in MOCVD-Grown MoS₂ by Manipulating the Precursor Phase

Advancements in the synthesis of large-area, high-quality two-dimensional transition metal dichalcogenides such as MoS2 play a crucial role in the development of future electronic and optoelectronic devices. The presence of defects formed by sulfur vacancies in MoS2 results in low photoluminescence emission and imparts high n-type doping behavior, thus substantially affecting material quality. Herein, we report a new method in which single-phase (liquid) precursors are used for the metal–organic chemical vapor deposition (MOCVD) growth of a MoS2 film. Furthermore, we fabricated a high-performance photodetector (PD) and achieved improved photoresponsivity and faster photoresponse in the spectral range 405–637 nm compared to those of PDs fabricated by the conventional MOCVD method. In addition, the fabricated MoS2 thin film showed a threshold voltage shift in the positive gate bias direction owing to the reduced number of S vacancy defects in the MoS2 lattice. Thus, our method significantly improved the synthesis of monolayer MoS2 and can expand the application scope of high-quality, atomically thin materials in large-scale electronic and optoelectronic devices

Uniform Growth of High-Quality Oxide Thin Films on Graphene Using a CdSe Quantum Dot Array Seeding Layer

Graphene displays outstanding properties as an electrode and a semiconducting channel material for transistors; however, the weak interfacial bond between graphene and an inorganic oxide material-based insulator presents a major constraint on these applications. Here, we report a new approach to improving the interface between the two materials using a CdSe quantum dot (QD)-based seeding layer in an inorganic material–graphene junction. CdSe QDs were electrochemically grown on graphene without degrading the properties of the graphene layer. The graphene structure was then used as the electrode in an oxide semiconductor by depositing a zinc oxide thin film onto the graphene coated with a QD seed layer (QD/G). The zinc oxide film adhered strongly to the graphene layer and provided a low contact resistance. A high-k dielectric layer in the form of an HfO₂ film, which is an essential element in the fabrication of high-performance graphene-based field effect transistors, was also uniformly formed on the QD/G sheet using atomic layer deposition. The resulting transistors provided a relatively good performance, yielding hole and electron mobilities of 2600 and 2000 cm²/V·s