283 research outputs found
Limitations to THz generation by optical rectification using tilted pulse fronts
Terahertz (THz) generation by optical rectification (OR) using
tilted-pulse-fronts is studied. One-dimensional (1-D) and 2-D spatial models,
which simultaneously account for (i) the nonlinear coupled interaction of the
THz and optical radiation, (ii) angular and material dispersion, (iii)
absorption, iv) self-phase modulation and (v) stimulated Raman scattering are
presented. We numerically show that the large experimentally observed cascaded
frequency down-shift and spectral broadening (cascading effects) of the optical
pump pulse is a direct consequence of THz generation. In the presence of this
large spectral broadening, the phase mismatch due to angular dispersion is
greatly enhanced. Consequently, this cascading effect in conjunction with
angular dispersion is shown to be the strongest limitation to THz generation in
lithium niobate for pumping at 1 micron. It is seen that the exclusion of these
cascading effects in modeling OR, leads to a significant overestimation of the
optical-to-THz conversion efficiency. The simulation results are supported by
experiments
THz generation using a reflective stair-step echelon
We present a novel method for THz generation in lithium niobate using a
reflective stair-step echelon structure. The echelon produces a discretely
tilted pulse front with less angular dispersion compared to a high
groove-density grating. The THz output was characterized using both a 1-lens
and 3-lens imaging system to set the tilt angle at room and cryogenic
temperatures. Using broadband 800 nm pulses with a pulse energy of 0.95 mJ and
a pulse duration of 70 fs (24 nm FWHM bandwidth, 39 fs transform limited
width), we produced THz pulses with field strengths as high as 500 kV/cm and
pulse energies as high as 3.1 J. The highest conversion efficiency we
obtained was 0.33%. In addition, we find that the echelon is easily implemented
into an experimental setup for quick alignment and optimization.Comment: 19 pages, 4 figure
Terahertz-driven linear electron acceleration
The cost, size and availability of electron accelerators is dominated by the
achievable accelerating gradient. Conventional high-brightness radio-frequency
(RF) accelerating structures operate with 30-50 MeV/m gradients. Electron
accelerators driven with optical or infrared sources have demonstrated
accelerating gradients orders of magnitude above that achievable with
conventional RF structures. However, laser-driven wakefield accelerators
require intense femtosecond sources and direct laser-driven accelerators and
suffer from low bunch charge, sub-micron tolerances and sub-femtosecond timing
requirements due to the short wavelength of operation. Here, we demonstrate the
first linear acceleration of electrons with keV energy gain using
optically-generated terahertz (THz) pulses. THz-driven accelerating structures
enable high-gradient electron or proton accelerators with simple accelerating
structures, high repetition rates and significant charge per bunch. Increasing
the operational frequency of accelerators into the THz band allows for greatly
increased accelerating gradients due to reduced complications with respect to
breakdown and pulsed heating. Electric fields in the GV/m range have been
achieved in the THz frequency band using all optical methods. With recent
advances in the generation of THz pulses via optical rectification of slightly
sub-picosecond pulses, in particular improvements in conversion efficiency and
multi-cycle pulses, increasing accelerating gradients by two orders of
magnitude over conventional linear accelerators (LINACs) has become a
possibility. These ultra-compact THz accelerators with extremely short electron
bunches hold great potential to have a transformative impact for free electron
lasers, future linear particle colliders, ultra-fast electron diffraction,
x-ray science, and medical therapy with x-rays and electron beams
Electrochemical evaluation and phase-related impedance studies on silicon–few layer graphene (FLG) composite electrode systems
Silicon-Few Layer Graphene (Si-FLG) composite electrodes are investigated using a scalable electrode manufacturing method. A comprehensive study on the electrochemical performance and the impedance response is measured using electrochemical impedance spectroscopy. The study demonstrates that the incorporation of few-layer graphene (FLG) results in significant improvement in terms of cyclability, electrode resistance and diffusion properties. Additionally, the diffusion impedance responses that occur during the phase changes in silicon is elucidated through Staircase Potentio Electrochemical Impedance Spectroscopy (SPEIS): a more comprehensive and straightforward approach than previous state-of-charge based diffusion studies
- …