3 research outputs found

    Controlled Electron–Hole Trapping and Detrapping Process in GdAlO<sub>3</sub> by Valence Band Engineering

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    Two different trapping and detrapping processes of charge carriers have been investigated in GdAlO<sub>3</sub>:Ce<sup>3+</sup>,Ln<sup>3+</sup> (Ln = Pr, Er, Nd, Ho, Dy, Tm, Eu, and Yb) and GdAlO<sub>3</sub>:Ln<sup>3+</sup>,RE<sup>3+</sup> (Ln = Sm, Eu, and Yb; RE = Ce, Pr, and Tb). Cerium is the recombination center and lanthanide codopants act as electron-trapping centers in GdAlO<sub>3</sub>:Ce<sup>3+</sup>,Ln<sup>3+</sup>. Different lanthanide codopants generate different trap depths. The captured electrons released from the lanthanide recombine at cerium via the conduction band, eventually producing the broad 5d–4f emission centered at ∼360 nm from Ce<sup>3+</sup>. On the other hand, Sm<sup>3+</sup>, Eu<sup>3+</sup>, and Yb<sup>3+</sup> act as recombination centers, while Ce<sup>3+</sup>, Pr<sup>3+</sup>, and Tb<sup>3+</sup> act as hole-trapping centers in GdAlO<sub>3</sub>: Ln<sup>3+</sup>,RE<sup>3+</sup>. In this situation, we find evidence that recombination is by means of hole release instead of the more commonly reported electron release. The trapped holes are released from Pr<sup>4+</sup> or Tb<sup>4+</sup> and recombine with the trapped electrons on Sm<sup>2+</sup>, Eu<sup>2+</sup>, or Yb<sup>2+</sup> and yield characteristic trivalent emission from Sm<sup>3+</sup>, Eu<sup>3+</sup>, or Yb<sup>3+</sup> at ∼600, ∼617, or ∼980 nm, respectively. Lanthanum was introduced to engineer the valence band energy and change the trap depth in Gd<sub>1–<i>x</i></sub>La<sub><i>x</i></sub>AlO<sub>3</sub>:Eu<sup>3+</sup>,Pr<sup>3+</sup> and Gd<sub>1–<i>x</i></sub>La<sub><i>x</i></sub>AlO<sub>3</sub>:Eu<sup>3+</sup>,Tb<sup>3+</sup>. The results show that the valence band moves upward and the trap depth related to Pr<sup>3+</sup> or Tb<sup>3+</sup> decreases

    Electronic Structure and Site Occupancy of Lanthanide-Doped (Sr, Ca)<sub>3</sub>(Y, Lu)<sub>2</sub>Ge<sub>3</sub>O<sub>12</sub> Garnets: A Spectroscopic and First-Principles Study

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    Photoluminescence excitation (PLE) and emission spectra (PL) of undoped (Sr, Ca)<sub>3</sub>(Y, Lu)<sub>2</sub>Ge<sub>3</sub>O<sub>12</sub> as well as Eu<sup>3+</sup>- and Ce<sup>3+</sup>-doped samples have been investigated. The PL spectra show that Eu<sup>3+</sup> enters into both dodecahedral (Ca, Sr) and octahedral (Y, Lu) sites. Ce<sup>3+</sup> gives two broad excitation bands in the range of 200–450 nm. First-principle calculations for Ce<sup>3+</sup> on both dodecahedral and octahedral sites provide sets of 5d excited level energies that are consistent with the experimental results. Then the vacuum referred binding energy diagrams for (Sr, Ca)<sub>3</sub>(Y, Lu)<sub>2</sub>Ge<sub>3</sub>O<sub>12</sub> have been constructed with the lanthanide dopant energy levels by utilizing spectroscopic data. The Ce<sup>3+</sup> 5d excited states are calculated by first-principles calculations. Thermoluminescence (TL) glow curves of (Ce<sup>3+</sup>, Sm<sup>3+</sup>)-codoped (Sr, Ca)<sub>3</sub>(Y, Lu)<sub>2</sub>Ge<sub>3</sub>O<sub>12</sub> samples show a good agreement with the prediction of lanthanide trapping depths derived from the energy level diagram. Finally, the energy level diagram is used to explain the low thermal quenching temperature of Ce<sup>3+</sup> and the absence of afterglow in (Sr, Ca)<sub>3</sub>(Y, Lu)<sub>2</sub>Ge<sub>3</sub>O<sub>12</sub>
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