Twisted-light-induced intersubband transitions in quantum wells at normal incidence

We examine theoretically the intersubband transitions induced by laser beams of light with orbital angular momentum (twisted light) in semiconductor quantum wells at normal incidence. These transitions become possible in the absence of gratings thanks to the fact that collimated laser beams present a component of the light's electric field in the propagation direction. We derive the matrix elements of the light-matter interaction for a Bessel-type twisted-light beam represented by its vector potential in the paraxial approximation. Then, we consider the dynamics of photo-excited electrons making intersubband transitions between the first and second subbands of a standard semiconductor quantum well. Finally, we analyze the light-matter matrix elements in order to evaluate which transitions are more favorable for given orbital angular momentum of the light beam in the case of small semiconductor structures.Comment: 9 pages, 2 figure

Photoexcitation of graphene with twisted light

We study theoretically the interaction of twisted light with graphene. The light-matter interaction matrix elements between the tight-binding states of electrons in graphene are determined near the Dirac points. We examine the dynamics of the photoexcitation process by posing the equations of motion of the density matrix and working up to second order in the field. The time evolution of the angular momentum of the photoexcited electrons and their associated photocurrents are examined in order to elucidate the mechanisms of angular momentum transfer. We find that the transfer of spin and orbital angular momentum from light to the electrons is more akin here to the case of intraband than of interband transitions in semiconductors, due to the fact that the two relevant energy bands of graphene originate from the same atomic orbitals.Comment: 18 pages, 4 figure

Coherent optical control of spin-spin interaction in doped semiconductors

We provide a theory of laser-induced interaction between spins localized by impurity centers in a semiconductor host. By solving exactly the problem of two localized spins interacting with one itinerant exciton, an analytical expression for the induced spin-spin interaction is given as a function of the spin separation, laser energy, and intensity. We apply the theory to shallow neutral donors (Si) and deep rare-earth magnetic impurities (Yb) in III-V semiconductors. When the photon energy approaches a resonance related to excitons bound to the impurities, the coupling between the localized spins increases, and may change from ferromagnetic to anti-ferromagnetic. This light-controlled spin interaction provides a mechanism for the quantum control of spins in semiconductors for quantum information processing; it suggests the realization of spin systems whose magnetic properties can be controlled by changing the strength and the sign of the spin-spin interaction.Comment: 10 pages, 5 figure

Donor-donor interaction mediated by cavity-photons and its relation to interactions mediated by excitons and polaritons

I report theoretical predictions of two models of donor-donor indirect interaction mediated by photons in zero- and two-dimensional cavities. These results are compared to previously studied cases of indirect interactions mediated by excitons and/or polaritons in bulk semiconductor and two-dimensional cavities. I find that photons mediate an Ising-like interaction between donors in the same manner polaritons do, in contrast to the Heisenberg-like interaction mediated by exciton. For the particular case of a two-dimensional cavity, the model shows that the dependence on distance of the donor-donor coupling constant is the same for photons and polaritons when the donor-donor distance is large. Then, it becomes clear that photons are responsible for the long range behavior of the polariton indirect interaction

Efficient spin control in high-quality-factor planar micro-cavities

A semiconductor microcavity embedding donor impurities and excited by a laser field is modelled. By including general decay and dephasing processes, and in particular cavity photon leakage, detailed simulations show that control over the spin dynamics is significally enhanced in high-quality-factor cavities, in which case picosecond laser pulses may produce spin-flip with high-fidelity final states.Comment: 6 pages, 4 figure

Long-range spin-qubit interaction mediated by microcavity polaritons

We study the optically-induced coupling between spins mediated by polaritons in a planar micro-cavity. In the strong coupling regime, the vacuum Rabi splitting introduces anisotropies in the spin coupling. Moreover, due to their photon-like mass, polaritons provide an extremely long spin coupling range. This suggests the realization of two-qubit all-optical quantum operations within tens of picoseconds with spins localized as far as hundreds of nanometers apart.Comment: 5 pages, 3 figure

Twisted-light-induced optical transitions in semiconductors: Free-carrier quantum kinetics

We theoretically investigate the interband transitions and quantum kinetics induced by light carrying orbital angular momentum, or twisted light, in bulk semiconductors. We pose the problem in terms of the Heisenberg equations of motion of the electron populations, and inter- and intra-band coherences. Our theory extends the free-carrier Semiconductor Bloch Equations to the case of photo-excitation by twisted light. The theory is formulated using cylindrical coordinates, which are better suited to describe the interaction with twisted light than the usual cartesian coordinates used to study regular optical excitation. We solve the equations of motion in the low excitation regime, and obtain analytical expressions for the coherences and populations; with these, we calculate the orbital angular momentum transferred from the light to the electrons and the paramagnetic and diamagnetic electric current densities.Comment: 11 pages, 3 figure