Landau level spectra and the quantum Hall effect of multilayer graphene

The Landau level spectra and the quantum Hall effect of ABA-stacked multilayer graphenes are studied in the effective mass approximation. The low-energy effective mass Hamiltonian may be partially diagonalized into an approximate block-diagonal form, with each diagonal block contributing parabolic bands except, in a multilayer with an odd number of layers, for an additional block describing Dirac-like bands with a linear dispersion. We fully include the band parameters and, taking into account the symmetry of the lattice, we analyze their affect on the block-diagonal Hamiltonian. Next-nearest layer couplings are shown to be particularly important in determining the low-energy spectrum and the phase diagram of the quantum Hall conductivity, by causing energy shifts, level anti-crossings, and valley splitting of the low-lying Landau levels.Comment: 9 pages, 4 figure

Asymmetry gap in the electronic band structure of bilayer graphene.

A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap U between the conduction and valence bands. In particular, a self consistent Hartree approximation is used to describe imperfect screening of an external gate, employed primarily to control the density n of electrons on the bilayer, resulting in a potential difference between the layers and a density dependent gap U(n). We discuss the influence of a finite asymmetry gap U(0) at zero excess density, caused by the screening of an additional transverse electric field, on observations of the quantum Hall effect

Spin-orbit coupling and broken spin degeneracy in multilayer graphene

Since the lattices of ABA-stacked graphene multilayers with an even number of layers, as well as that of monolayer graphene, satisfy spatial-inversion symmetry, their electronic bands must be spin degenerate in the presence of time-inversion symmetry. In intrinsic monolayer and bilayer graphene, when symmetry is not broken by external fields, the only spin-orbit coupling present at low energy near the corner of the Brillouin zone is the Kane-Mele term, that opens a bulk energy gap but does not break the spin degeneracy of the energy bands [C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801 (2005)]. However, spin splitting is allowed in multilayers with an odd number of layers (greater than or equal to 3) because their lattices do not satisfy spatial inversion symmetry. We show that, in trilayer graphene, in addition to the Kane-Mele term, there is a second type of intrinsic spin-orbit coupling present at low energy near the corner of the Brillouin zone. It introduces a Zeeman-like spin splitting of the energy bands at each valley, with an opposite sign of the effective magnetic field in the two valleys. We estimate the magnitude of the effective field to be ~2T.Comment: 4 pages, 1 figur

Degeneracy breaking and intervalley scattering due to short-ranged impurities in finite single-wall carbon nanotubes

We present a theoretical study of degeneracy breaking due to short-ranged impurities in finite, single-wall, metallic carbon nanotubes. The effective mass model is used to describe the slowly varying spatial envelope wavefunctions of spinless electrons near the Fermi level at two inequivalent valleys (K-points) in terms of the four component Dirac equation for massless fermions, with the role of spin assumed by pseudospin due to the relative amplitude of the wave function on the sublattice atoms (``A'' and ``B''). Using boundary conditions at the ends of the tube that neither break valley degeneracy nor mix pseudospin eigenvectors, we use degenerate perturbation theory to show that the presence of impurities has two effects. Firstly, the position of the impurity with respect to the spatial variation of the envelope standing waves results in a sinusoidal oscillation of energy level shift as a function of energy. Secondly, the position of the impurity within the hexagonal graphite unit cell produces a particular 4 by 4 matrix structure of the corresponding effective Hamiltonian. The symmetry of this Hamiltonian with respect to pseudospin flip is related to degeneracy breaking and, for an armchair tube, the symmetry with respect to mirror reflection in the nanotube axis is related to pseudospin mixing.Comment: 20 pages, 10 eps figure

Parity and valley degeneracy in multilayer graphene

We study spatial symmetry in general ABA-stacked multilayer graphene to illustrate how electronic spectra at the two valleys are related in a magnetic field. We show that the lattice of multilayers with an even number of layers, as well as that of monolayer graphene, satisfy spatial inversion symmetry, which rigorously guarantees valley degeneracy in the absence of time-reversal symmetry. A multilayer with an odd number of layers (three or more) lacks inversion symmetry, but there is another transformation imposing an approximate valley degeneracy, which arises because the low-energy Hamiltonian consists of separate monolayerlike and bilayerlike parts. We show that an external electrostatic potential generally breaks valley degeneracy in a magnetic field, in a markedly different manner in odd and even multilayers.Comment: 6 pages, 3 figure

Magnetic ratchet effect in bilayer graphene

We consider the orbital effect of an in-plane magnetic field on electrons in bilayer graphene, deriving linear-in-field contributions to the low-energy Hamiltonian arising from the presence of either skew interlayer coupling or interlayer potential asymmetry, the latter being tunable by an external metallic gate. To illustrate the relevance of such terms, we consider the ratchet effect in which a dc current results from the application of an alternating electric field in the presence of an in-plane magnetic field and inversion-symmetry breaking. By comparison with recent experimental observations in monolayer graphene [C. Drexler et al., Nat. Nanotechnol. 8, 104 (2013)], we estimate that the effect in bilayer graphene can be two orders of magnitude greater than that in monolayer graphene, illustrating that the bilayer is an ideal material for the realization of optoelectronic effects that rely on inversion-symmetry breaking

Weak localisation magnetoresistance and valley symmetry in graphene.

Due to the chiral nature of electrons in a monolayer of graphite (graphene) one can expect weak antilocalisation and a positive weak-field magnetoresistance in it. However, trigonal warping (which breaks p to −p symmetry of the Fermi line in each valley) suppresses antilocalisation, while inter-valley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore conventional negative magnetoresistance. We show this by evaluating the dependence of the magnetoresistance of graphene on relaxation rates associated with various possible ways of breaking a ’hidden’ valley symmetry of the system

Trigonal warping and Berry’s phase Npi in ABC-stacked multilayer graphene.

The electronic band structure of ABC-stacked multilayer graphene is studied within an effective mass approximation. The electron and hole bands touching at zero energy support chiral quasiparticles characterized by Berry’s phase Nπ for N-layers, generalizing the low-energy band structure of monolayer and bilayer graphene. We investigate the trigonal-warping deformation of the energy bands and show that the Lifshitz transition, in which the Fermi circle breaks up into separate parts at low energy, reflects Berry’s phase Nπ. It is particularly prominent in trilayers, N = 3, with the Fermi circle breaking into three parts at a relatively large energy that is related to next-nearestlayer coupling. For N = 3, we study the effects of electrostatic potentials which vary in the stacking direction, and find that a perpendicular electric field, as well as opening an energy gap, strongly enhances the trigonal-warping effect. In magnetic fields, the N = 3 Lifshitz transition is manifested as a coalescence of Landau levels into triply-degenerate levels

Weak localization in graphene.

We review the recently-developed theory of weak localization in monolayer and bilayer graphene. For high-density monolayer graphene and for any-density bilayers, the dominant factor affecting weak localization properties is trigonal warping of graphene bands, which reflects asymmetry of the carrier dispersion with respect to the center of the corresponding valley. The suppression of weak localization by trigonal warping is accompanied by a similar effect caused by random-bond disorder (due to bending of a graphene sheet) and by dislocation/antidislocation pairs. As a result, weak localization in graphene can be observed only in samples with sufficiently strong inter-valley scattering, which is reflected by a characteristic form of negative magnetoresistance in graphene-based structures