4,605 research outputs found

    Ring-resonator-based wavelength filters

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    Microring resonators (MR) represent a class of filters with characteristics very similar to those of Fabry–Perot filters. However, they offer the advantage that the injected and reflected signals are separated in individual waveguides, and in addition, their design does not require any facets or gratings and is thus particularly simple. MRs evolved from the fields of fibre optic ring resonators and micron scale droplets. Their inherently small size (with typical diameters in the range between several to tens of micrometres), their filter characteristics and their potential for being used in complex and flexible configurations make these devices particularly attractive for integrated optics or VLSI photonics applications.\ud MRs for filter applications, delay lines, as add/drop multiplexers, and modulators will be covered in detail in this chapter, while other applications such as in optical sensing, in spectroscopy or for coherent light generation (MR lasers) are outside the scope of this chapter.\ud This chapter focuses primarily on 4-port microrings, while 2-port devices will play a minor role here and are covered in more detail in Chap. 9. The present chapter starts with design considerations, the functional behaviour, and key characteristics of a single microring resonator and continues with the design of cascaded MRs allowing the implementation of higher order filters. Finally, complex devices like add-drop filters, tuneable dispersion compensators, all-optical wavelength converters, and tuneable cross-connects are treated.\u

    High speed electro optic polymer micro-ring resonator

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    An electro-optic polymer micro-ring resonator for high speed modulation was designed, realized and characterized. The design of layer-stack and electrodes was done such that modulation frequencies up till 1 GHz should be possible. The device consists of a ridge waveguide, defined in a negative photoresist (SU8), with a poled electro-optic polymeric (PMMA-DR1) ring-resonator vertically coupled to it. The complete layerstack is sandwiched between electrodes to apply an electric field over the ringresonator in order to shift its resonance wavelength. Electro optic modulation was measured up to 50 MHz limited by weak modulation depth. Optimizing the polingprocess will increase the modulation efficiency thereby making modulation frequencies of 1 GHz measurable

    High speed polymer E-O modulator consisting of a MZI with a microring resonator

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    A Mach-Zehnder interferometer with an polymer electro-optic micro-ring resonator on one of its branches is realized in a polymer layerstack and characterized. Electro-optic coefficients of 10 pm/V and modulation frequencies of 1 GHz were measured

    A novel high-speed polymeric EO modulator based on a combination of a microring resonator and an MZI

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    A Mach-Zehnder interferometer with an electrooptic polymer mircroring resonator adjacent to one of its branches is realized in a polymer layer stack. The microresonator is defined by reactive ion etching in the nonlinear PMMA-DR1 polymer and waveguide definition is done without etching, by using a negative photoresist (SU8) as waveguide layer. Electrooptic coefficients of 10 pm/V and modulation frequencies of 1 GHz were measured

    'Aurora'-a time domain based meta-algorithm for the rapid simulation and design of complex optical circuits

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    A new simulation tool called ‘Aurora’, specifically developed to efficiently simulate highly complex optical devices such as OADMs and Routers based on (higher order)microring resonators, is presented. The meta-simulation algorithm used by Aurora creates a framework in which many different simulation algorithms can be properly combined rather than providing a simulation algorithm itself. The calculations of this program use a simple scheme based in the time domain from which the frequency response can easily be derived. Simulation results of a 4-port OADM and waveguide gratings show excellent agreement when compared to experimentally obtained measurement data and conventional simulation methods

    Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist.

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    Photostabilization is a widely used post lithographic resist treatment process, which allows to harden the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching. In this paper we present the optimization of deep UV-curing of 0,3-3.3 μm thick positive resist profiles followed by heat treatment up to 280 °C. The effectiveness of this resist treatment allows for metal mask free reactive ion etching with selectivity up to 6 for silicon structures, thermal silicon oxide and silicon oxynitride. This procedure is demonstrated by the results obtained in etching of various integrated optical structures

    Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications

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    Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from N20N_20, 2% SiH4/N2SiH_4/N_2 and 5% PH3/ArPH_3/Ar gaseous mixtures. The PH3/ArPH_3/Ar flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C
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