Growth and electronic structure of graphene on semiconducting Ge(110)

The direct growth of graphene on semiconducting or insulating substrates might help to overcome main drawbacks of metal-based synthesis, like metal-atom contaminations of graphene, transfer issues, etc. Here we present the growth of graphene on n-doped semiconducting Ge(110) by using an atomic carbon source and the study of the structural and electronic properties of the obtained interface. We found that graphene interacts weakly with the underlying Ge(110) substrate that keeps graphene's electronic structure almost intact promoting this interface for future graphene-semiconductor applications. The effect of dopants in Ge on the electronic properties of graphene is also discussed.Comment: submitted on 06.04.201

Graphene on metallic surfaces

The present manuscript summarizes the modern view on the problem of the graphene–metal interaction. Presently, the close-packed surfaces of d metals are used as templates for the preparation of highly-ordered graphene layers. Different classifications can be introduced for these systems: graphene on lattice-matched and graphene on lattice-mismatched surfaces where the interaction with the metallic substrate can be either “strong” or “weak”. Here these classifications, with the focus on the specific features in the electronic structure in all cases, are considered on the basis of large amount of experimental and theoretical data, summarized and discussed. The perspectives of the graphene–metal interfaces in fundamental and applied physics and chemistry are pointed out

Local electronic properties of the graphene-protected giant Rashba-split BiAg2_2 surface

We report the preparation of the interface between graphene and the strong Rashba-split BiAg$_2$ surface alloy and investigatigation of its structure as well as the electronic properties by means of scanning tunneling microscopy/spectroscopy and density functional theory calculations. Upon evaluation of the quasiparticle interference patterns the unpertrubated linear dispersion for the $\pi$ band of $n$-doped graphene is observed. Our results also reveal the intact nature of the giant Rashba-split surface states of the BiAg$_2$ alloy, which demonstrate only a moderate downward energy shift upon the presence of graphene. This effect is explained in the framework of density functional theory by an inward relaxation of the Bi atoms at the interface and subsequent delocalisation of the wave function of the surface states. Our findings demonstrate a realistic pathway to prepare a graphene protected giant Rashba-split BiAg$_2$ for possible spintronic applications.Comment: text and figures; submitted on 30.12.201