Ultralow-loss polarization-insensitive silicon nitride-assisted double-etched silicon edge coupler with polarization splitting

High-performance silicon-based edge couplers for interfacing with standard single-mode fibers encounter significant challenges due to limitations imposed by the minimum fabrication width. Here, we propose a silicon nitride-assisted double-etched O-band silicon edge coupler with a minimum width of 180 nm. Notably, the polarization splitting function naturally integrates into this edge coupler. Through simulation, the proposed edge coupler, without a cantilever, demonstrates a minimum coupling loss of 0.53/0.82 dB with an average extinction ratio of 42/18 dB for TE/TM polarization. Additionally, this edge coupler exhibits weak polarization dependence with an average difference of only 0.24 dB in the O band. Leveraging a segmented taper shape design, the 0.5-dB bandwidth of coupling loss extends to approximately 100 nm for both TE and TM polarizations, despite the inclusion of two evanescent coupling parts

Influence of Supersaturation and Spontaneous Catalyst Formation on the Growth of PbS Wires: Toward a Unified Understanding of Growth Modes

High quality stoichiometric lead sulfide (PbS) wires were synthesized by a simple chemical vapor deposition (CVD) process using pure PbS powder as the material source. Growth mechanisms were systematically investigated under various growth conditions, with three modes of growth identified: direct vapor–liquid–solid (VLS) wire growth nucleating from the substrate surface, bulk PbS crystallites by vapor–solid (VS) deposition, and subsequent VLS growth nucleating on top of the bulk deposition through spontaneously formed catalyst particles. Furthermore, we found that these growth modes can be organized in terms of different levels of supersaturation, with VS bulk deposition dominating at high supersaturation and VLS wire growth on the substrate dominating at low supersaturation. At intermediate supersaturation, the bulk VS deposition can form larger crystallites with domains of similarly oriented wires extending from the flat facets. Both predeposited catalysts and spontaneously formed Pb particles were observed as nucleation catalysts, and their interplay leads to various interesting growth scenarios such as reversely tapered growth with increasing diameter. The VLS growth mechanism was confirmed by the presence of Pb-rich caps revealed in an elaborate cross-sectional transmission electron microscopy (TEM) experiment after focused ion beam milling in a modified lift-out procedure. Temperature-dependent photoluminescence (PL) of PbS wires was performed in the mid-infrared wavelength range for the first time, demonstrating strong light emission from band edge, blue-shifted with increasing temperature. The high optical quality of PbS wires may lead to important applications in mid-infrared photonics. The substrate growth temperature as low as 400 °C allows for silicon-compatible processing for integrated optoelectronics applications

Quaternary Alloy Semiconductor Nanobelts with Bandgap Spanning the Entire Visible Spectrum

Quaternary Alloy Semiconductor Nanobelts with Bandgap Spanning the Entire Visible Spectru

Composition-Graded Nanowire Solar Cells Fabricated in a Single Process for Spectrum-Splitting Photovoltaic Systems

Nanomaterials such as semiconductor nanowires have unique features that could enable novel optoelectronic applications such as novel solar cells. This paper aims to demonstrate one such recently proposed concept: Monolithically Integrated Laterally Arrayed Multiple Band gap (MILAMB) solar cells for spectrum-splitting photovoltaic systems. Two cells with different band gaps were fabricated simultaneously in the same process on a single substrate using spatially composition-graded CdSSe alloy nanowires grown by the Dual-Gradient Method in a chemical vapor deposition system. CdSSe nanowire ensemble devices tested under 1 sun AM1.5G illumination achieved open-circuit voltages up to 307 and 173 mV and short-circuit current densities as high as 0.091 and 0.974 mA/cm2 for the CdS- and CdSe-rich cells, respectively. The open-circuit voltages were roughly three times those of similar CdSSe film cells fabricated for comparison due to the superior optical quality of the nanowires. I–V measurements were also performed using optical filters to simulate spectrum-splitting. The open-circuit voltages and fill factors of the CdS-rich subcells were uniformly larger than the corresponding CdSe-rich cells for similar photon flux, as expected. This suggests that if all wires can be contacted, the wide-gap cell is expected to have greater output power than the narrow-gap cell, which is the key to achieving high efficiencies with spectrum-splitting. This paper thus provides the first proof-of-concept demonstration of simultaneous fabrication of MILAMB solar cells. This approach to solar cell fabrication using single-crystal nanowires for spectrum-splitting photovoltaics could provide a future low-cost high-efficiency alternative to the conventional high-cost high-efficiency tandem cells

Strain-Induced Indirect-to-Direct Bandgap Transition, Photoluminescence Enhancement, and Linewidth Reduction in Bilayer MoTe₂

Two-dimensional (2D) layered materials provide an ideal platform for engineering electronic and optical properties through strain control because of their extremely high mechanical elasticity and sensitive dependence of material properties on mechanical strain. In this paper, a combined experimental and theoretical effort is made to investigate the effects of mechanical strain on various spectral features of bilayer MoTe2 photoluminescence (PL). We found that bilayer MoTe2 can be converted from an indirect to a direct bandgap material through strain engineering, resulting in a photoluminescence enhancement by a factor of 2.24. Over 90% of the PL comes from photons emitted by the direct excitons at the maximum strain applied. Importantly, we show that strain effects lead to a reduction of the overall linewidth of PL by as much as 36.6%. We attribute the dramatic decrease of linewidth to a strain-induced complex interplay among various excitonic varieties such as direct bright excitons, trions, and indirect excitons. Our experimental results on direct and indirect exciton emission features are explained by theoretical exciton energies that are based on first-principles electronic band structure calculations. The consistent theory-experimental trend shows that the enhancement of PL and the reduction of linewidth are the consequences of the increasing direct exciton contribution with the increase of strain. Our results demonstrate that strain engineering can lead to a PL quality of the bilayer MoTe2 comparable to that of the monolayer counterpart. The additional benefit of a longer emission wavelength makes the bilayer MoTe2 more suitable for silicon-photonics integration due to the reduced silicon absorption

Strain Induced Indirect-to-Direct Bandgap Transition, Photoluminescence Enhancement, and Linewidth Reduction in Bilayer MoTe2

Two-dimensional (2D) layered materials provide an ideal platform for engineering electronic and optical properties through strain control because of their extremely high mechanical elasticity and sensitive dependence of material properties on mechanical strain. In this paper, a combined experimental and theoretical effort is made to investigate the effects of mechanical strain on various spectral features of bilayer MoTe2 photoluminescence (PL). We found that bilayer MoTe2 can be converted from an indirect-to direct-bandgap material through strain engineering, resulting in a photoluminescence enhancement by a factor of 2.24. Over 90% of the PL comes from photons emitted by the direct excitons at the maximum strain applied. Importantly, we show that strain effects lead to a reduction of the overall linewidth of PL by as much as 36.6%. We attribute the dramatic decrease of linewidth to a strain-induced complex interplay among various excitonic varieties such as direct bright excitons, trions, and indirect excitons. Our experimental results on direct and indirect exciton emission features are explained by theoretical exciton energies that are based on first-principle electronic band structure calculations. The consistent theory-experimental trend shows that the enhancement of PL and the reduction of linewidth are the consequences of the increasing direct exciton contribution with the increase of strain. Our results demonstrate that strain engineering can lead to a PL quality of the bilayer MoTe2 comparable to that of the monolayer counterpart. The additional benefit of a longer emission wavelength makes the bilayer MoTe2 more suitable for Silicon-photonics integration due to the reduced Silicon absorption

Dynamical Color-Controllable Lasing with Extremely Wide Tuning Range from Red to Green in a Single Alloy Nanowire Using Nanoscale Manipulation

Multicolor lasing and dynamic color-tuning in a wide spectrum range are challenging to realize but critically important in many areas of technology and daily life, such as general lighting, display, multicolor detection, and multiband communication. By exploring nanoscale growth and manipulation, we have demonstrated the first active dynamical color control of multicolor lasing, continuously tunable between red and green colors separated by 107 nm in wavelength. This is achieved in a purposely engineered single CdSSe alloy nanowire with composition varied along the wire axis. By looping the wide-gap end of the alloy nanowire through nanoscale manipulation, two largely independent (only weakly coupled) laser cavities are formed respectively for the green and red color modes. Our approach simultaneously overcomes the two fundamental challenges for multicolor lasing in material growth and cavity design. Such multicolor lasing and continuous color tuning in a wide spectral range represents a new paradigm shift and would eventually enable color-by-design and white-color lasers for lighting, illumination, and many other applications

A Top-down Approach to Fabrication of High Quality Vertical Heterostructure Nanowire Arrays

We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20−40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer. This top-down, mask-free, large scale approach is compatible with the established device fabrication processes and could serve as an important alternative to the bottom-up approach, significantly expanding ranges and varieties of applications of nanowire technology

The Quadruplon in a Monolayer Semiconductor

So far, composite particles involving two or three constituent particles have been experimentally identified, such as the Cooper pairs, excitons, and trions in condensed matter physics, or diquarks and mesons in quantum chromodynamics. Although the four-body irreducible entities have long been predicted theoretically in a variety of physical systems alternatively as quadruplons, quadrons, or quartets, the closely related experimental observation so far seems to be restricted to the field of elementary particles (e.g. the recent tetraquark at CERN). In this article, we present the first experimental evidence for the existence of a four-body irreducible entity, the quadruplon, involving two electrons and two holes in a monolayer of Molybdenum Ditelluride. Using the optical pump-probe technique, we discovered a series of new spectral features that are distinct from those of trions and bi-excitons. By solving the four-body Bethe-Salpeter equation in conjunction with the cluster expansion approach, we are able to explain these spectral features in terms of the four-body irreducible cluster or the quadruplons. In contrast to a bi-exciton which consists of two weakly bound excitons, a quadruplon consists of two electrons and two holes without the presence of an exciton. Our results provide experimental evidences of the hitherto theorized four-body entities and thus could impact the understanding of the structure of matter in a wide range of physical systems or new semiconductor technologies

Excitonic Complexes and Optical Gain in Two-Dimensional Molybdenum Ditelluride Well below Mott Transition

Strong Coulomb interaction in 2D materials provides unprecedented opportunities for studying many key issues of condensed matter physics, such as co-existence and mutual conversions of excitonic complexes, fundamental optical processes associated with their conversions, and their roles in the celebrated Mott transition. Recent lasing demonstrations in 2D materials raise important questions about the existence and origin of optical gain and possible roles of excitonic complexes. While lasing occurred at extremely low densities dominated by various excitonic complexes, optical gain was observed in the only experiment at densities several orders of magnitude higher, exceeding the Mott density. Here, we report a new gain mechanism involving charged excitons or trions well below the Mott density in 2D molybdenum ditelluride. Our combined experimental and modeling study not only reveals the complex interplays of excitonic complexes well below the Mott transition, but also provides foundation for lasing at extremely low excitation levels, important for future energy efficient photonic devices