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    A Versatile Thin-Film Deposition Method for Multidimensional Semiconducting Bismuth Halides

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    Despite the significant progress in fabricating hybrid organic–inorganic lead halide perovskite solar cells, their toxicity and low stability remain as major drawbacks, thereby hindering large-scale commercialization. Given the isoelectronic nature of lead­(II) and bismuth­(III) ions, potentially stable and nontoxic alternatives for efficient light absorption in thin-film photovoltaic (PV) devices may be found among bismuth-based halide semiconductors. However, high-quality polycrystalline films of many of these systems have not been demonstrated. Here we present a versatile and facile two-step coevaporation approach to fabricate A<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> (A = Cs, Rb) and AgBi<sub>2</sub>I<sub>7</sub> polycrystalline films with smooth, pinhole-free morphology and average grain size of >200 nm. The process involves an initial two-source evaporation step (involving CsI, RbI or AgI, and BiI<sub>3</sub> sources), followed by an annealing step under BiI<sub>3</sub> vapor. The structural, optical, and electrical characteristics of the resulting thin films are studied by X-ray diffraction, optical spectroscopy, X-ray/UV photoelectron spectroscopy, and scanning electron microscopy
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