Nanoscale Direct Mapping of Noise Source Activities on Graphene Domains

An electrical noise is one of the key parameters determining the performance of modern electronic devices. However, it has been extremely difficult, if not impossible, to image localized noise sources or their activities in such devices. We report a “noise spectral imaging” strategy to map the activities of localized noise sources in graphene domains. Using this method, we could quantitatively estimate sheet resistances and noise source densities inside graphene domains, on domain boundaries and on the edge of graphene. The results show high activities of noise sources and large sheet resistance values at the domain boundary and edge of graphene. Additionally, we showed that the top layer in double-layer graphene had lower noises than single-layer graphene. This work provides valuable insights about the electrical noises of graphene. Furthermore, the capability to directly map noise sources in electronic channels can be a major breakthrough in electrical noise research in general

UV/Ozone-Oxidized Large-Scale Graphene Platform with Large Chemical Enhancement in Surface-Enhanced Raman Scattering

We fabricated a highly oxidized large-scale graphene platform using chemical vapor deposition (CVD) and UV/ozone-based oxidation methods. This platform offers a large-scale surface-enhanced Raman scattering (SERS) substrate with large chemical enhancement in SERS and reproducible SERS signals over a centimeter-scale graphene surface. After UV-induced ozone generation, ozone molecules were reacted with graphene to produce oxygen-containing groups on graphene and induced the p-type doping of the graphene. These modifications introduced the structural disorder and defects on the graphene surface and resulted in a large chemical mechanism-based signal enhancement from Raman dye molecules [rhodamine B (RhB), rhodamine 6G (R6G), and crystal violet (CV) in this case] on graphene. Importantly, the enhancement factors were increased from ∼103 before ozone treatment to ∼104, which is the largest chemical enhancement factor ever on graphene, after 5 min ozone treatment due to both high oxidation and p-doping effects on graphene surface. Over a centimeter-scale area of this UV/ozone-oxidized graphene substrate, strong SERS signals were repeatedly and reproducibly detected. In a UV/ozone-based micropattern, UV/ozone-treated areas were highly Raman-active while nontreated areas displayed very weak Raman signals

Stacking-Order Dependence of Strain in Bilayer Graphene: Implications for High-Performance Electronics

The Cu step bunches formed during the synthesis of graphene by chemical vapor deposition (CVD) have been intensively studied to optimize the electrical and mechanical properties of graphene. For example, it has been reported that the compressive strain due to the mismatch between the thermal expansion coefficients of Cu and graphene tends to be released by forming periodic steps depending on the number of graphene layers. However, the stacking-order dependence of the step bunches in multilayer graphene has not yet been investigated. Here, we show that the twisted bilayer graphene (tBLG) with less compressive strain induces the formation of considerably smaller step bunches compared to the case of AB-stacked bilayer graphene (BLG), as evidenced by atomic force microscopy (AFM) and Raman spectroscopy. It is supposed that interlayer slipping between the weakly coupled tBLG layers weakens mechanical stiffness as well as compressive strain to deform the Cu surface. In addition, we also find that the direction of Cu step bunches depends on the lattice orientation of tBLG. Thus, our findings are expected to provide insights into understanding and improving the electrical and mechanical properties of multilayer CVD graphene for high-performance device applications

Strain-Assisted Wafer-Scale Nanoperforation of Single-Layer Graphene by Arrayed Pt Nanoparticles

We demonstrate the large-area lithography-free ordered perforation of reduced graphene oxide (rGO) and graphene grown by chemical vapor deposition (CVD) with arrayed Pt nanoparticles (NPs) prepared by using self-patterning diblock copolymer micelles. The rGO layers were perforated by Pt NPs formed either on top or bottom surface. On the other hand, CVD graphene was perforated only when the Pt NPs were placed under the graphene layer. Various control experiments confirm that the perforation reaction of CVD graphene was catalyzed by Pt NPs, where the mechanical strain as well as the chemical reactivity of Pt lowered the activation energy barriers for the oxidation reaction of CC bonds in graphene. Systematic atomic force microscopy and Raman analyses revealed the detailed perforation mechanism. The pore size and spacing can be controlled, and thus our present work may open a new direction in the development of ordered nanopatterns on graphene using metal NPs

Self-Assembled Arrays of Organic Nanotubes with Infinitely Long One-Dimensional H-Bond Chains

Self-Assembled Arrays of Organic Nanotubes with Infinitely Long One-Dimensional H-Bond Chain

Graphene-Based Bimorph Microactuators

A novel graphene-on-organic film fabrication method that is compatible with a batch microfabrication process was developed and used for electromechanically driven microactuators. A very thin layer of graphene sheets was monolithically integrated and the unique material characteristics of graphene including negative thermal expansion and high electrical conductivity were exploited to produce a bimorph actuation. A large displacement with rapid response was observed while maintaining the low power consumption. This enabled the successful demonstration of transparent graphene-based organic microactuators

Graphene-Based Bimorph Microactuators

A novel graphene-on-organic film fabrication method that is compatible with a batch microfabrication process was developed and used for electromechanically driven microactuators. A very thin layer of graphene sheets was monolithically integrated and the unique material characteristics of graphene including negative thermal expansion and high electrical conductivity were exploited to produce a bimorph actuation. A large displacement with rapid response was observed while maintaining the low power consumption. This enabled the successful demonstration of transparent graphene-based organic microactuators

Surface-Directed Molecular Assembly of Pentacene on Monolayer Graphene for High-Performance Organic Transistors

Organic electronic devices that use graphene electrodes have received considerable attention because graphene is regarded as an ideal candidate electrode material. Transfer and lithographic processes during fabrication of patterned graphene electrodes typically leave polymer residues on the graphene surfaces. However, the impact of these residues on the organic semiconductor growth mechanism on graphene surface has not been reported yet. Here, we demonstrate that polymer residues remaining on graphene surfaces induce a stand-up orientation of pentacene, thereby controlling pentacene growth such that the molecular assembly is optimal for charge transport. Thus, pentacene field-effect transistors (FETs) using source/drain monolayer graphene electrodes with polymer residues show a high field-effect mobility of 1.2 cm2/V s. In contrast, epitaxial growth of pentacene having molecular assembly of lying-down structure is facilitated by π−π interaction between pentacene and the clean graphene electrode without polymer residues, which adversely affects lateral charge transport at the interface between electrode and channel. Our studies provide that the obtained high field-effect mobility in pentacene FETs using monolayer graphene electrodes arises from the extrinsic effects of polymer residues as well as the intrinsic characteristics of the highly conductive, ultrathin two-dimensional monolayer graphene electrodes

Optical Probing of the Electronic Interaction between Graphene and Hexagonal Boron Nitride

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturb their various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few percent decrease in the Fermi velocity (<i>v</i>_F) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in <i>v</i>_F and mechanical strain but not by charge doping, unlike graphene supported on SiO₂ substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping

Strain Relaxation of Graphene Layers by Cu Surface Roughening

The surface morphology of copper (Cu) often changes after the synthesis of graphene by chemical vapor deposition (CVD) on a Cu foil, which affects the electrical properties of graphene, as the Cu step bunches induce the periodic ripples on graphene that significantly disturb electrical conduction. However, the origin of the Cu surface reconstruction has not been completely understood yet. Here, we show that the compressive strain on graphene induced by the mismatch of thermal expansion coefficient with Cu surface can be released by forming periodic Cu step bunching that depends on graphene layers. Atomic force microscopy (AFM) images and the Raman analysis show the noticeably longer and higher step bunching of Cu surface under multilayer graphene and the weaker biaxial compressive strain on multilayer graphene compared to monolayer. We found that the surface areas of Cu step bunches under multilayer and monolayer graphene are increased by ∼1.41% and ∼0.77% compared to a flat surface, respectively, indicating that the compressive strain on multilayer graphene can be more effectively released by forming the Cu step bunching with larger area and longer periodicity. We believe that our finding on the strain relaxation of graphene layers by Cu step bunching formation would provide a crucial idea to enhance the electrical performance of graphene electrodes by controlling the ripple density of graphene